Transcription of AO3400 Rev8 RoHS
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AO3400 Rev8 RoHS
AO340030V N-Channel MOSFETG eneral DescriptionProduct SummaryVDS ID (at VGS=10V) RDS(ON) (at VGS=10V)< 28m RDS(ON) (at VGS = )< 33m RDS(ON) (at VGS = )< 52m SymbolVDSThe AO3400 combines advanced trench MOSFET technology with a low resistance package to provideextremely low RDS(ON). This device is suitable for use as aload switch or in PWM Maximum Ratings TA=25 C unless otherwise noted30 VDrain-Source Voltage30G DSSOT23 Top View Bottom View DGSGSDVDSVGSIDMTJ, TSTGS ymbolt 10sSteady-StateSteady-StateR Junction-to-Lead C/W C/WMaximum Junction-to-Ambient A D6312580 Maximum Junction-to-Ambient CTA=70 CPulsed Drain Current CContinuous DrainCurrentVV 12 Gate-Source VoltageDrain-Source Voltage30 ParameterTypMax C/WR CJunction and Storage Temperature Range-55 to 150 CThermal CharacteristicsPower Dissipation BPDTA=25 CWG DSSOT23 Top View Bottom View DGSGSD Rev 8: Dec 1 of 5 AO3400 SymbolMinTypMaxUnitsBVDSS30 VVDS=30V, VGS=0V1TJ=55 C5 IGSS100nAVGS(th)Gate Threshold (ON)30A1828TJ=125 C28391933m 2452m (on) Transfer CapacitanceVGS=0V, VDS=15V, f=1 MHzSWITCHING PARAMETERSE lectrical Characteristics (TJ=25 C unless otherwise noted)STATIC PARAMETERSP arameterConditionsDrain-Source Breakdown VoltageOn state drain currentID=250 A, VGS=0 VVGS= , VDS=5 VVGS=10V, ID= TransconductanceDiode Forward VoltageIS=1A,VGS=0 VVDS=5V, ID= , ID=4
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 17 5 2 10 0 18 0 3 6 9 12 15 0 0.5 1 1.5 2 2.5 3 I D (A) VGS (Volts) Figure 2: Transfer Characteristics (Note E) 10 15 20 25 30 0 5 10 15 20 R DS(ON) (m Ω) ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 0.8 1 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 Normalized On ...
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