Transcription of NX7002AK - Nexperia
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NX7002AK60 V, single N-channel Trench MOSFET6 August 2015 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench Features and benefits Very fast switching Trench MOSFET technology ESD protected3. Applications Relay driver High-speed line driver Low-side loadswitch Switching circuits4. Quick reference dataTable 1. Quick reference dataSymbolParameterConditionsMinTypMaxUn itVDSdrain-source voltage--60 VVGS gate-source voltageTj = 25 C-20-20 VVGS = 10 V; Tsp = 25 C--300mAIDdrain currentVGS = 10 V; Tamb = 25 C[1]--190mAStatic characteristicsRDSondrain-source on-stateresistanceVGS = 10 V; ID = 100 mA; Tj = 25 [1]Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2. Nexperia 2017. All rights reservedNexperiaNX7002AK60 V, single N-channel Trench MOSFETNX7002 AKAll information provided in this document is subject to legal data sheet6 August 20152 / 165.
0.05 0.15 0.20 ID (A) 0 10V 2.3V VGS = 2.0 V 2.5V 3.0V 4.5V Tj = 25 °C Fig. 6. Output characteristics: drain current as a function of drain-source voltage; typical values ... typical values Tj (°C)-60 0 60 120 180 017aaa474 1.0 0.5 1.5 2.0 a 0 Fig. 11. Normalized drain-source on-state resistance as a function of junction temperature; typical
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