Transcription of 30V N-Channel MOSFET
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30V N-Channel MOSFET
AO3400A. 30V N-Channel MOSFET . General Description Product Summary The AO3400A combines advanced trench MOSFET VDS 30V. technology with a low resistance package to provide ID (at VGS=10V) extremely low RDS(ON). This device is suitable for use as a RDS(ON) (at VGS=10V) < . load switch or in PWM applications. RDS(ON) (at VGS = ) < 32m . RDS(ON) (at VGS = ) < 48m . SOT23. Top View Bottom View D. D. D. G G. S. S. G S. Absolute Maximum Ratings TA=25 C unless otherwise noted Parameter Symbol Maximum Units Drain-Source Voltage VDS 30 V. Gate-Source Voltage VGS 12 V. Continuous Drain TA=25 C ID. Current TA=70 C A. C. Pulsed Drain Current IDM 30. TA=25 C PD W. Power Dissipation B TA=70 C Junction and Storage Temperature Range TJ, TSTG -55 to 150 C. Thermal Characteristics Parameter Symbol Typ Max Units Maximum Junction-to-Ambient A t 10s 70 90 C/W. R JA. Maximum Junction-to-Ambient A D Steady-State 100 125 C/W.
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 17 5 2 10 0 18 0 3 6 9 12 15 0 0.5 1 1.5 2 2.5 3 I D (A) VGS (Volts) Figure 2: Transfer Characteristics (Note E) 10 15 20 25 30 0 5 10 15 20 R DS(ON) (m Ω) ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 0.8 1 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 Normalized On ...
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