Chapter 10 化學氣相沉積與介電質薄膜 - isu.edu.tw

Chapter 10.. 1.. 2. CVD vs.. SiO2. SiO2. Si Si Si . 3. CVD vs.. CVD.. 4.. - (PMD). - (IMD). (STI).. (PD). (ARC). 5. CMOS . PD2.. Metal 2, Al Cu Al Cu PD1. ARC. W USG. IMD . ILD2. 1, Al Cu PMD . W WCVD. ILD1 BPSG. STI n+ n+ USG p+ p+ STI. P N . P TiN. P CVD. 6.. STI N . : = 1 +1 + 1 + (N 1) + 1 = N + 3. STI PMD IMD PD.. 7. (CVD). (Chemical Vapor Deposition).. 8. CVD .. Si ( ) SiH4 ( ). SiCl2H2 ( DCS). Si ( ) SiCl3H ( TCS). SiCl4 ( Siltet). LPCVD SiH4, O2. SiO2 ( ) PECVD SiH4, N2O. PECVD Si(OC2H5)4 ( TEOS), O2. LPCVD TEOS. APCVD&SACVDTM TEOS, O3 (ozone). Oxynitride SiH4, N2O, N2, NH3. PECVD SiH4, N2, NH3. Si3N4 LPCVD SiH4, N2, NH3. LPCVD C8H22N2Si (BTBAS). W ( ) WF6 ( ), SiH4, H2. WSi2 WF6 ( ), SiH4, H2. TiN Ti[N (CH3) 2]4 (TDMAT). Ti TiCl4. Cu 9. CVD .. 10. CVD .. 11.. 12.. 13. CVD . APCVD . LPCVD . PECVD . 14. (APCVD). CVD . APCVD . APCVD (O3-TEOS).

2 目標 ‧辨別至少四種化學氣相沉積的應用 ‧描述化學氣相沉積製程的流程 ‧列出兩種沉積區間並說明他們與溫度之

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