Transcription of Device Fabrication Technology1 - Chenming Hu
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593 Device Fabrication Technology1 CHAPTER OBJECTIVESW hile the previous chapters explain the properties of semiconductors, this chapter willexplain how devices are made out of the semiconductors. It introduces the basictechniques of defining physical patterns by lithography and etching, changing thedoping concentration by ion implantation and diffusion, and depositing thin films overthe semiconductor s substrate. One section describes the techniques of fabricating theimportant metal interconnection structures. It is useful to remember the names of thekey techniques and their acronyms, as they are often used in technical discussions. With rapid miniaturization and efficient high-volume processing, over 1019 transistors(or a billion for every person in the world) are produced every year.
LSI (large-scale integration, 104 transistors on a chip), VLSI (very large-scale integration, 106 transistors on a chip), ULSI (ultra-large-scale integration), and GSI (giga-scale integration). In actuality, all these terms are used to describe circuits and technologies of wide ranges of size and complexity and simply mean “large IC.”
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