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GaN FET module performance advantage over silicon
GaN FET module performance advantage over siliconNarendra MehtaSenior Systems Engineer, GaN productsHigh Voltage power SolutionsTexas InstrumentsGaN FET module performance advantage over silicon 2 texas instruments : March 2015 IntroductionAll these characteristics are suitable for power electronics applications featuring reduced power loss under high -switching-frequency GaN devices now being grown on affordable silicon substrates, compared to GaN on sapphire or bulk GaN, power GaN FETs will find an increasing rate of adoption for highly efficient and form factor constrained applications in the 30V and higher DC/DC voltage conversion space. In this paper we investigate the loss mechanisms in a hard-switched DC/DC converter and how a GaN FET power stage can outperform Si MOSFETs.
GaN FET module performance advantage over silicon Narendra Mehta Senior Systems Engineer, GaN products High Voltage Power Solutions Texas Instruments
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