Transcription of Hall Effect Experiment - University of Tennessee
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Hall Effect Experiment by Dr. G. Bradley Armen Department of Physics and Astronomy 401 Nielsen Physics Building The University of Tennessee Knoxville, Tennessee 37996-1200 Copyright April 2007 by George Bradley Armen* *All rights are reserved. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage or retrieval system, without permission in writing from the author. 1. Introduction The Hall Effect is basic to solid-state physics and an important diagnostic tool for the characterization of materials particularly semi-conductors. It provides a direct determination of both the sign of the charge carriers, electron or holes (appendix A), and their density in a given sample.
systems, at very low temperature and large fields, the Hall resistance show a step-like (rather than linear) dependence on B. These steps are completely independent of the type of sample and quantitized to values h/e2m, where m is an integer. This is the famous Quantum Hall Effect4. The fundamental quantum of Hall resistance is h/e2 =25,813Ω ...
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