Transcription of Interconnect Lowk - Stanford University
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Interconnect Lowk - Stanford University
1EE311/ Low-k Dielectrics1 tanford UniversityaraswatProf. Krishna SaraswatDepartment of Electrical EngineeringStanford UniversityStanford, CA DielectricsEE311/ Low-k Dielectrics2 tanford Universityaraswat Signaling Delay Power dissipation Bandwidth Self heating Data reliability (Noise) Cross talk ISI: impedance mismatch Area Depend on R, C and L ! Function and length dictates relative importance Performance Metrics Clocking Timing uncertainty (skew and jitter) Power dissipation Slew rate Area Power Distribution Supply reliability Reliability Electromigration2EE311/ Low-k Dielectrics3 tanford UniversityaraswatInterplay Between Signaling Metrics AR increase (tradeoffs)=> Better delay and electromigration Worse power and cross talk Increasing aspect ratio may not help Pay attention to different metrics simultaneously Design window quite complex Capacitance very important2 IMDILD totintIMDtalktotint2totinttotintAR11 CCXCfVCPRC!
network. Heat treatment to remove solvent and porogen, and leave porous framework. Porous Materials ta nfo rdU ivesy 18 EE311/ Low-k Dielectrics araswat ... Air-Gap Interconnect Structure Air Al SiO 2 Ref: Shieh, Saraswat & McVittie. IEEE Electron Dev. Lett., January 1998 Ultimate limit is air with K = 1 Cu Air gap
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