Transcription of IRFZ46N - Infineon Technologies
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IRFZ46N - Infineon Technologies
IRFZ46 NHEXFET Power MOSFET07/15/02 Absolute Maximum JCJunction-to-Case CSCase-to-Sink, Flat, Greased C/WR JAJunction-to-Ambient 62 Thermal = 55 VRDS(on) = ID = 53A SDGTO-220 ABAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achieveextremely low on-resistance per silicon area. This benefit,combined with the fast switching speed and ruggedizeddevice design that HEXFET power MOSFETs are wellknown for, provides the designer with an extremely efficientand reliable device for use in a wide variety of TO-220 package is universally preferred for allcommercial-industrial applications at power dissipationlevels to approximately 50 watts.
www.irf.com 3 Fig 4. Normalized On-Resistance Vs. Temperature Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3.
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