Transcription of MCP6N16 - Microchip Technology
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MCP6N16 - Microchip Technology
2014 Microchip Technology 1 MCP6N16 Features: High DC Precision:-VOS: 17 V (maximum, GMIN= 100)-TC1: 60 nV/ C (maximum, GMIN= 100)- CMRR: 112 dB (minimum, GMIN= 100, VDD= )- PSRR: 110 dB (minimum, GMIN=100, VDD= )-gE: (maximum, GMIN= 10, 100) Flexible:- Minimum Gain (GMIN) Options:1, 10 and 100 V/V- Rail-to-Rail Input and Output- Gain Set by Two External Resistors Bandwidth: 500 kHz (typical, Gain = GMIN=1, 10) Power Supply:-VDD: to : mA (typical)- Power Savings (Enable) Pin: EN Enhanced EMI Protection:- Electromagnetic Interference Rejection Ratio (EMIRR): 111 dB at GHz Extended Temperature Range: -40 C to +125 CTypical Applications: High-Side Current Sensor Wheatstone Bridge Sensors Difference Amplifier with Level Shifting Power Control LoopsDesign Aids: SPICE Macro Model Microchip Advanced Part Selector (MAPS) Application NotesDescription: Microchip Technology Inc.
MCP6N16 DS20005318A-page 2 2014 Microchip Technology Inc. Minimum Gain Options Table 1 shows key specifications that differentiate between the different minimum gain (GMIN) options. See Section 1.0 “Electrical Characteristics”, Section 6.0 “Packaging Information” and Product Identification System for further information on GMIN. Figures …
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