MCP6N16 - Microchip Technology

1 2014 Microchip Technology 1 MCP6N16 Features: High DC Precision:-VOS: 17 V (maximum, GMIN= 100)-TC1: 60 nV/ C (maximum, GMIN= 100)- CMRR: 112 dB (minimum, GMIN= 100, VDD= )- PSRR: 110 dB (minimum, GMIN=100, VDD= )-gE: (maximum, GMIN= 10, 100) Flexible:- Minimum Gain (GMIN) Options:1, 10 and 100 V/V- Rail-to-Rail Input and Output- Gain Set by Two External Resistors Bandwidth: 500 kHz (typical, Gain = GMIN=1, 10) Power Supply:-VDD: to : mA (typical)- Power Savings (Enable) Pin: EN Enhanced EMI Protection:- Electromagnetic Interference Rejection Ratio (EMIRR): 111 dB at GHz Extended Temperature Range: -40 C to +125 CTypical Applications: High-Side Current Sensor Wheatstone Bridge Sensors Difference Amplifier with Level Shifting Power Control LoopsDesign Aids: SPICE Macro Model Microchip Advanced Part Selector (MAPS) Application NotesDescription: Microchip Technology Inc.

2 Offers the single Zero-DriftMCP6N16 instrumentation amplifier (INA) with Enablepin (EN) and three minimum gain options (GMIN). Theinternal offset correction gives high DC precision: it hasvery low offset and offset drift, and negligible 1/f external resistors set the gain, minimizing gainerror and drift over temperature. The reference voltage(VREF) shifts the output voltage (VOUT).The MCP6N16 is designed for single-supply operation,with rail-to-rail input (no common mode crossoverdistortion) and output performance. The supply voltagerange ( to ) is low enough to support manyportable applications. All devices are fully specifiedfrom -40 C to +125 C. Each part has EMI filters at theinput pins, for good EMI rejection (EMIRR).These parts have three minimum gain options (1, 10and 100 V/V).

3 This allows the user to optimize the inputoffset voltage and input noise for different Application CircuitPackage TypesVOUT20 k 100 k k VDDMCP6N16-10010 F100 EN100 RTD Temperature k k MCP6N16 MSOPVIPVIMVSSVOUTVFG12348765 VREFVDDENMCP6N163 3 DFN *VIPVIMVSSVOUTVFG12348765 VREFVDDEN* Includes Exposed Thermal Pad (EP); see Table Instrumentation AmplifierMCP6N16DS20005318A-page 2 2014 Microchip Technology Gain OptionsTable 1 shows key specifications that differentiatebetween the different minimum gain (GMIN) Section Electrical Characteristics ,Section Packaging Information and ProductIdentification System for further information on 1 to3 show input offset voltage versustemperature for the three gain options (GMIN=1, 10,100 V/V).

4 FIGURE 1:Input Offset Voltage vs. Temperature, with GMIN= 2:Input Offset Voltage vs. Temperature, with GMIN= 3:Input Offset Voltage vs. Temperature, with GMIN= 1:KEY DIFFERENTIATING SPECIFICATIONSPart (V/V) ( V) ( nV/ C) -40 to +125 CCMRR(dB) (dB) (V) (MHz) ( VP-P) = to 10 Hzeni(nV/ Hz) < 500 1:GMIN is the minimum stable gain (GDM), for a given part option. In other words, GDM Voltage ( V)-40-30-200-50-250255075100125 InputOAmbient Temperature ( C)GMIN= 128 SamplesVDD= VDD/2 NPBW = 3 mHz3423e ( V)1 Voltage-10 OffsetV-2nputOGMIN= 1028 SamplesV55V4-3 IVDD= VDD/2 NPBW = 3 mHz-4-50-250255075100125 Ambient Temperature ( C)3423e ( V)1 Voltage-10 OffsetV-2nputOGMIN= 10028 SamplesV=55V4-3 IVDD= VDD/2 NPBW = 3 mHz-4-50-250255075100125 Ambient Temperature ( C) 2014 Microchip Technology Maximum Ratings VDD VSS.

5 At Input Pins(Note 1) .. 2 mAAnalog Inputs (VIP and VIM)(Note 1) .. VSS to VDD+ Other Inputs and Outputs .. VSS to VDD+ Input Voltage .. |VDD VSS|Output Short-Circuit Current .. ContinuousCurrent at Output and Supply Pins .. 30 mAStorage Temperature .. -65 C to +150 CMaximum Junction Temperature ..+150 CESD protection on all pins (HBM, MM).. 4kV,400 VNote 1:See Section Input Voltage Limits and Section Input Current Limits . Notice: Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functionaloperation of the device at those or any other conditions above those indicated in the operational listings of this specification is not implied. Exposure to maximumrating conditions for extended periods may affect device 4 2014 Microchip Technology 1-1:DC ELECTRICAL SPECIFICATIONSE lectrical Characteristics: Unless otherwise indicated, TA=+25 C, VDD= to , VSS= GND, VCM=VDD/2, VDM=0V, VREF=VDD/2, VL=VDD/2, RL=10k to VL, GDM=GMIN and EN = VDD; see Figures 1-7 and1-8 (Note 1).

6 OffsetInput Offset VoltageVOS-85 +85 V1TA=+25 C-22 +2210-17 +17100 Input Offset Voltage Drift Linear Temp. +1800nV/ C1TA= -40 C to +125 C (Note 2)-180 +18010-60 +60100 Input Offset Voltage Drift Quadratic Temp. 560 pV/ C21TA= -40 C to +125 C 63 10 69 100 Input Offset Aging VOS V1408 hr Life Test at +150 C, measured at +25 C 10 100 Power Supply Rejection RatioPSRR91109 dB1104122 10110128 100 Output OffsetOutput Offset VoltageVOSO0 VallInput Current and Impedance (Note 3)Input Bias CurrentIB-100 2+100pAallAcross Temperature 20 TA=+85 CAcross Temperature02502000TA=+125 CNote 1:VCM=(VIP+VIM)/2, VDM=(VIP VIM) and GDM=1+ :For Design Guidance only; not :These specifications apply to the VIP, VIM input pair (use VCM) and to the VREF, VFG input pair (use VREF instead).

7 4:This specification applies to the VIP, VIM, VREF and VFG pins :Figures 2-52 and2-53 show the VIVL, VIVH, VDML and VDMH variation over :See Section Explanation of DC Error Specifications . 2014 Microchip Technology 5 MCP6N16 Input Offset CurrentIOS-800 300+800pAallAcross Temperature 320 TA=+85 CAcross Temperature-1500 350+1500TA=+125 CCommon Mode Input ImpedanceZCM 1013||10 ||pFDifferential Input ImpedanceZDIFF 1013||4 Input Common Mode Voltage (VCM or VREF) (Note 3)Input Voltage Range (Note 4, Note 5)VIVL VSS + + Common Mode Rejection RatioCMRR8098 dB1 VCM=VIVL to VIVH, VDD= 10103121 10089107 1 VCM=VIVL to VIVH, VDD= 10112130 100 Common Mode Rejection Ratio at VREFCMRR283101 dB1 VREF= to VDD ,VDD= 10102120 10094112 1 VREF= to VDD ,VDD= 10115133 100 TABLE 1-1:DC ELECTRICAL SPECIFICATIONS (CONTINUED)Electrical Characteristics.

8 Unless otherwise indicated, TA=+25 C, VDD= to , VSS= GND, VCM=VDD/2, VDM=0V, VREF=VDD/2, VL=VDD/2, RL=10k to VL, GDM=GMIN and EN = VDD; see Figures 1-7 and1-8 (Note 1). 1:VCM=(VIP+VIM)/2, VDM=(VIP VIM) and GDM=1+ :For Design Guidance only; not :These specifications apply to the VIP, VIM input pair (use VCM) and to the VREF, VFG input pair (use VREF instead).4:This specification applies to the VIP, VIM, VREF and VFG pins :Figures 2-52 and2-53 show the VIVL, VIVH, VDML and VDMH variation over :See Section Explanation of DC Error Specifications .MCP6N16DS20005318A-page 6 2014 Microchip Technology Mode Nonlinearity (Note 6)INLCM-550 +550ppm1 VCM=VIVL to VIVH, VDD= +7510-20 +20100-310 +3101 VCM=VIVL to VIVH, VDD= +3510-10 +10100 Input Differential Voltage (VDM) (Note 3)Differential Input Voltage Range (Note 5)VDML , VREF=VDD,VOUT within + + VDD , VREF=0V,VOUT within Gain Error (Note 6)gE %1 VDD= , VREF=VDD/2,VDM= ( )/GMIN %10, 100 1 VDD= , VREF=VDD/2,VDM= ( )/GMIN 10, + , VREF= ,VDM= 0 to ( ) + , + , VREF= ,VDM= 0 to ( ) + , 100 TABLE 1-1:DC ELECTRICAL SPECIFICATIONS (CONTINUED)Electrical Characteristics: Unless otherwise indicated, TA=+25 C, VDD= to , VSS= GND, VCM=VDD/2, VDM=0V, VREF=VDD/2, VL=VDD/2, RL=10k to VL, GDM=GMIN and EN = VDD.

9 See Figures 1-7 and1-8 (Note 1). 1:VCM=(VIP+VIM)/2, VDM=(VIP VIM) and GDM=1+ :For Design Guidance only; not :These specifications apply to the VIP, VIM input pair (use VCM) and to the VREF, VFG input pair (use VREF instead).4:This specification applies to the VIP, VIM, VREF and VFG pins :Figures 2-52 and2-53 show the VIVL, VIVH, VDML and VDMH variation over :See Section Explanation of DC Error Specifications . 2014 Microchip Technology 7 MCP6N16 Differential Gain Drift (Note 6) gE/ TA 3 ppm/ CallVDD= , VREF=VDD/2,VDM= ( )/GMIN 4 VDD= , VREF=VDD/2,VDM= ( )/GMIN 4 VDD= , VREF= ,VDM= 0 to ( )/GMIN 3 VDD= , VREF= ,VDM= 0 to ( )/GMIND ifferential Nonlinearity (Note 6)INLDM 300 ppmallVDD= , VREF=VDD/2,VDM= ( )/GMIN 150 VDD= , VREF=VDD/2,VDM= ( )/GMIN 300 VDD= , VREF= ,VDM= 0 to ( )/GMIN 300 VDD= , VREF= ,VDM= 0 to ( )/GMINDC Open-Loop GainAOL84102 dB1 VDD= ,VOUT= to 10108126 10095113 1 VDD= ,VOUT= to 10119137 100 TABLE 1-1:DC ELECTRICAL SPECIFICATIONS (CONTINUED)Electrical Characteristics: Unless otherwise indicated, TA=+25 C, VDD= to , VSS= GND, VCM=VDD/2, VDM=0V, VREF=VDD/2, VL=VDD/2, RL=10k to VL, GDM=GMIN and EN = VDD.

10 See Figures 1-7 and1-8 (Note 1). 1:VCM=(VIP+VIM)/2, VDM=(VIP VIM) and GDM=1+ :For Design Guidance only; not :These specifications apply to the VIP, VIM input pair (use VCM) and to the VREF, VFG input pair (use VREF instead).4:This specification applies to the VIP, VIM, VREF and VFG pins :Figures 2-52 and2-53 show the VIVL, VIVH, VDML and VDMH variation over :See Section Explanation of DC Error Specifications .MCP6N16DS20005318A-page 8 2014 Microchip Technology Output Voltage SwingVOL VSS+3 mVallRL=10k , VDD= ,VDM=-VDD/(2 GMIN),VREF=VDD/2 VSS+6 RL=10k , VDD= ,VDM=-VDD/(2 GMIN),VREF=VDD/2 1V VSS+60 VSS+ 250RL=1k , VDD= ,VDM=-VDD/(2 GMIN),VREF=VDD/2 1 VMaximum Output Voltage SwingVOH VDD 3 mVRL=10k , VDD= ,VDM=VDD/(2 GMIN),VREF=VDD/2 + VDD 6 RL=10k , VDD= ,VDM=VDD/(2 GMIN),VREF=VDD/2 + 1 VVDD 250 VDD 60 RL=1k , VDD= ,VDM=VDD/(2 GMIN),VREF=VDD/2 + 1 VOutput Short-Circuit CurrentISC 10 mAVDD= 35 VDD= SupplySupply Current per Trip VVPRH 1-1:DC ELECTRICAL SPECIFICATIONS (CONTINUED)Electrical Characteristics: Unless otherwise indicated, TA=+25 C, VDD= to , VSS= GND, VCM=VDD/2, VDM=0V, VREF=VDD/2, VL=VDD/2, RL=10k to VL, GDM=GMIN and EN = VDD.