Transcription of MOSFET/IGBT DRIVERS THEORY AND APPLICATIONS
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MOSFET/IGBT DRIVERS THEORY AND APPLICATIONS
IXAN0010. MOSFET/IGBT DRIVERS . THEORY AND APPLICATIONS . By Abhijit D. Pathak 1. Introduction MOSFET and IGBT Technology. MOSFET Models and critical parameters Turn-on and Turn-off phenomenon and their explanations power losses in DRIVERS 2. Types of DRIVERS IC Gate DRIVERS Techniques available to boost current outputs Techniques available to generate negative bias during turn-off Need for under-voltage protections Overload and Short Circuit Protection 3. Isolation Techniques Employing Charge-pump and Bootstrap Techniques Examples of use of Opto-couplers in practical Driver Circuits Examples using transformers in practical Driver Circuits 4. IXYS Line of MOSFET/IGBT DRIVERS Technical details of all IXYS DRIVERS Features and Advantages of IXYS DRIVERS Applying IXYS DRIVERS in various topologies 5. Practical Considerations 6. Conclusion 2001 IXYS Corporation 1. IXYS Corporation; 3540 Bassett Street; Santa Clara, CA 95054; Tel: 408-982-0700; Fax: 408-496-0670. IXYS Semiconductor GmbH; Edisonstr.
However, for Power MOSFETs, it is appropriate to con-sider the relationship to be linear for values of V GS above V GS(th). The manufacturer’s data sheet value of V GS(th) is speci-fied at 25 oC. Fig. (3A) shows a symbol of N-Channel MOSFET and an equivalent model of the same with three inter-junction para-sitic capacitances, namely: C GS, C ...
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