Transcription of NTE2382 N Channel Enhancement Mode, High Speed Switch ...
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NTE2382 . MOSFET. N Channel Enhancement Mode, high Speed Switch ( compl to nte2383 ). Description: The NTE2382 is a MOS power N Channel FET in a TO220 type package designed for high voltage, high Speed power switching applications such as switching regulators, converters, solenoid, and relay drivers. Features: D. D Lower RDS(ON). D Improved Inductive Ruggedness D Fast Switching Times D Rugged Polysilicon Gate Cell Structure D Lower Input Capacitance G. D Extended Safe Operating Area D Improved high Temperature Reliability S. Absolute Maximim Ratings: Drain Source Voltage (Note 1), VDSS .. 100V. Drain Gate Voltage (RGS = 1M+ , Note 1), VDGR .. 100V. Gate Source Voltage, VGS .. +20V. Continuous Drain Current, ID. TC = +255C .. TC = +1005C .. Drain Current, Pulsed (Note 3), IDM .. 37A. Gate Current, Pulsed, IGM .. + Single Pulsed Avalanvhe Energy (Note 4), EAS.
G S D NTE2382 MOSFET N−Channel Enhancement Mode, High Speed Switch (Compl to NTE2383) Description: The NTE2382 is a MOS power N−Channel FET in a TO220 type package designed for high …
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Enhancement Mode High Speed Switch, Enhancement Mode High Speed Switch TO220 Type Package, N-Channel Enhancement Mode MOSFET, GN001 Application Guide Design with GaN Enhancement, GN001 Application Guide. Design with GaN Enhancement mode, Basics and Features of High-Power Fiber, High, XA Spartan-6, N-CHANNEL SELF PROTECTED