Transcription of PD - 91309C IRF3710
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PD - 91309C IRF3710
IRF3710 HEXFET Power JCJunction-to-Case CSCase-to-Sink, Flat, Greased C/WR JAJunction-to-Ambient 62 Thermal = 100 VRDS(on) = 23m ID = 57 ASDGTO-220 ABAdvanced HEXFET Power mosfets from International Rectifier utilizeadvanced processing techniques to achieve extremely low on-resistanceper silicon area. This benefit, combined with the fast switching speed andruggedized device design that HEXFET power mosfets are well knownfor, provides the designer with an extremely efficient and reliable device foruse in a wide variety of TO-220 package is universally preferred for all commercial-industrialapplications at power dissipation levels to approximately 50 watts. The lowthermal resistance and low package cost of the TO-220 contribute to its wideacceptance throughout the industry.
2 www.irf.com S D G Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current integral reverse (Body Diode) ––– ––– p-n junction diode.
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