Transcription of PD - 91670 IRF1010E
{{id}} {{{paragraph}}}
Example: tourism industry
PD - 91670 IRF1010E
PD - 91670 . IRF1010E . HEXFET Power MOSFET. l Advanced Process Technology D. l Ultra Low On-Resistance VDSS = 60V. l Dynamic dv/dt Rating l 175 C Operating Temperature RDS(on) = 12m . l Fast Switching G. l Fully Avalanche Rated ID = 84A . S. Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
IRF1010E www.irf.com 3 Fig 4. Normalized On-Resistance Vs. Temperature Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
Loading..
Tags:
Information
Domain:
Source:
Link to this page:
Please notify us if you found a problem with this document: