PD - 91670 IRF1010E

1 PD - 91670 . IRF1010E . HEXFET Power MOSFET. l Advanced Process Technology D. l Ultra Low On-Resistance VDSS = 60V. l Dynamic dv/dt Rating l 175 C Operating Temperature RDS(on) = 12m . l Fast Switching G. l Fully Avalanche Rated ID = 84A . S. Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

2 The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute TO-220AB. to its wide acceptance throughout the industry. Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25 C Continuous Drain Current, VGS @ 10V 84 . ID @ TC = 100 C Continuous Drain Current, VGS @ 10V 59 A. IDM Pulsed Drain Current 330. PD @TC = 25 C Power Dissipation 200 W. Linear Derating Factor W/ C. VGS Gate-to-Source Voltage 20 V. IAR Avalanche Current 50 A.

3 EAR Repetitive Avalanche Energy 17 mJ. dv/dt Peak Diode Recovery dv/dt V/ns TJ Operating Junction and -55 to + 175. TSTG Storage Temperature Range C. Soldering Temperature, for 10 seconds 300 ( from case ). Mounting torque, 6-32 or M3 srew 10 lbf in ( m). Thermal Resistance Parameter Typ. Max. Units R JC Junction-to-Case R CS Case-to-Sink, Flat, Greased Surface C/W. R JA Junction-to-Ambient 62. 1. 3/16/01. IRF1010E . Electrical Characteristics @ TJ = 25 C (unless otherwise specified). Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 60 V VGS = 0V, ID = 250 A.

4 V(BR)DSS/ TJ Breakdown Voltage Temp. Coefficient V/ C Reference to 25 C, ID = 1mA. RDS(on) Static Drain-to-Source On-Resistance 12 m VGS = 10V, ID = 50A . VGS(th) Gate Threshold Voltage V VDS = VGS, ID = 250 A. gfs Forward Transconductance 69 S VDS = 25V, ID = 50A . 25 VDS = 60V, VGS = 0V. IDSS Drain-to-Source Leakage Current A. 250 VDS = 48V, VGS = 0V, TJ = 150 C. Gate-to-Source Forward Leakage 100 VGS = 20V. IGSS nA. Gate-to-Source Reverse Leakage -100 VGS = -20V. Qg Total Gate Charge 130 ID = 50A. Qgs Gate-to-Source Charge 28 nC VDS = 48V. Qgd Gate-to-Drain ("Miller") Charge 44 VGS = 10V, See Fig.

5 6 and 13. td(on) Turn-On Delay Time 12 VDD = 30V. tr Rise Time 78 ID = 50A. ns td(off) Turn-Off Delay Time 48 RG = . tf Fall Time 53 VGS = 10V, See Fig. 10 . Between lead, D. LD Internal Drain Inductance . 6mm ( ). nH G. from package LS Internal Source Inductance . and center of die contact S. Ciss Input Capacitance 3210 VGS = 0V. Coss Output Capacitance 690 VDS = 25V. Crss Reverse Transfer Capacitance 140 pF = , See Fig. 5. EAS Single Pulse Avalanche Energy 1180 320 mJ IAS = 50A, L = 260 H. Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions D. IS Continuous Source Current MOSFET symbol 84.

6 (Body Diode) showing the A. ISM Pulsed Source Current integral reverse G. 330. (Body Diode) p-n junction diode. S. VSD Diode Forward Voltage V TJ = 25 C, IS = 50A, VGS = 0V . trr Reverse Recovery Time 73 110 ns TJ = 25 C, IF = 50A. Qrr Reverse Recovery Charge 220 330 nC di/dt = 100A/ s . ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD). Notes: Repetitive rating; pulse width limited by Pulse width 400 s; duty cycle 2%. max. junction temperature. (See fig. 11) This is a typical value at device destruction and represents Starting TJ = 25 C, L = 260 H operation outside rated limits.

7 RG = 25 , IAS = 50A, VGS =10V (See This is a calculated value limited to TJ = 175 C . Figure Calculated continuous current based on maximum allowable ISD 12). 50A, di/dt 230A/ s, VDD V(BR)DSS, TJ 175 C junction temperature. Package limitation current is 75A. 2 IRF1010E . 1000 1000 VGS. VGS. TOP 15V TOP 15V. 10V 10V. I D , Drain-to-Source Current (A). I D , Drain-to-Source Current (A). BOTTOM BOTTOM 100. 100. 10. 20 s PULSE WIDTH 20 s PULSE WIDTH. TJ = 25 C TJ = 175 C. 1 10. 1 10 100 1 10 100. VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V). Fig 1. Typical Output Characteristics Fig 2.

8 Typical Output Characteristics 1000 I D = 84A. R DS(on) , Drain-to-Source On Resistance I D , Drain-to-Source Current (A). TJ = 25 C. (Normalized). TJ = 175 C. 100 V DS = 25V. 20 s PULSE WIDTH VGS = 10V. 10 4 5 6 7 8 9 10 11 -60 -40 -20 0 20 40 60 80 100 120 140 160 180. VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( C). Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 3. IRF1010E . 6000 20. VGS = 0V, f = 1 MHZ ID = 50A. Ciss = Cgs + Cgd, Cds SHORTED. VDS = 48V. VGS , Gate-to-Source Voltage (V). 5000 Crss = Cgd VDS = 30V. 16. Coss = Cds + Cgd VDS = 12V.

9 C, Capacitance(pF). 4000 Ciss 12. 3000. Coss 8. 2000. 1000 Crss 4. FOR TEST CIRCUIT. 0 SEE FIGURE 13. 0. 1 10 100 0 20 40 60 80 100 120 140. VDS, Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC). Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs. Drain-to-Source Voltage Gate-to-Source Voltage 1000 1000. OPERATION IN THIS AREA. LIMITED BY R DS (on). ISD , Reverse Drain Current (A). ID, Drain-to-Source Current (A). 100. TJ = 175 C. 100. 100 sec 10. 10 1msec TJ = 25 C. 1. Tc = 25 C. Tj = 175 C 10msec V GS = 0 V Single Pulse 1. 1 10 100 1000. VSD ,Source-to-Drain Voltage (V).

10 VDS , Drain-toSource Voltage (V). Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area Forward Voltage 4 IRF1010E . 100 RD. VDS. LIMITED BY PACKAGE. VGS. 80 RG. I D , Drain Current (A). +. -VDD. 60. VGS. Pulse Width 1 s Duty Factor %. 40. Fig 10a. Switching Time Test Circuit 20. VDS. 90%. 0. 25 50 75 100 125 150 175. TC , Case Temperature ( C). 10%. VGS. Fig 9. Maximum Drain Current Vs. td(on) tr t d(off) tf Case Temperature Fig 10b. Switching Time Waveforms 1. Thermal Response (Z thJC ). D = P DM. SINGLE PULSE t1. (THERMAL RESPONSE) t2. Notes: 1. Duty factor D = t 1 / t 2.