Transcription of Power MOSFET Basics
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Power MOSFET Basics
Source Gate Power MOSFET Basics N+. P-body Table of Contents N- Epi 1. Basic Device Structure 2. Breakdown Voltage 3. On-State Characteristics N+ Substrate 4. Capacitance 5. Gate Charge Drain 6. Gate Resistance 7. Turn-on and Turn-off Figure 1b: Planar MOSFET Structure 8. Body Diode Forward Voltage 9. Body Diode Reverse Recovery 2. Breakdown Voltage 10. Avalanche capability and ratings 11. dV/dt ratings In most Power MOSFETs the N+ source and P-body junction 12. Thermal Resistance Characterization are shorted through source metallization to avoid accidental 13.
CISS = small-signal input capacitance with the drain and source terminals are shorted. COSS = small-signal output capacitance with the gate and source terminals are shorted. The MOSFET capacitances are non-linear as well as a function of the dc bias voltage. Figure 7a shows how capacitances vary with increased VDS voltage. All the
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