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Power Semiconductor Switching Devices

Power Semiconductor Switching Devices EE 442-642 Classification of Power Semiconductor switches Power Devices is divided into terms of their number of terminals: The two-terminal Devices (diodes) whose state is completely dependent on the external Power circuit they are connected to. The three-terminal Devices , whose state is not only dependent on their external Power circuit, but also on the signal on their driving terminal (gate or base). A second classification has to do with the type of charge carriers they use: Some Devices are majority carrier Devices (Schottky diode, MOSFET, JFET) - use only one type of charge carriers ( , either electrons or holes) Others are minority carrier Devices (p-n diode, Thyristor, BJT, IGBT) - use both charge carriers ( electrons and holes).

• It is the fastest power switching device with switching frequency more than 1 MHz, with voltage power ratings up to 1 kV and current rating as high as 300 A. • On-state requires continuous application of gate-source voltage of appropriate magnitude.

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