Transcription of Semiconductor IRF512, IRF513
{{id}} {{{paragraph}}}
Example: bankruptcy
Semiconductor IRF512, IRF513
5-1 SemiconductorFeatures , and , 80V and 100V rDS(ON)= and Single Pulse Avalanche Energy Rated SOA is Power Dissipation Limited Nanosecond Switching Speeds Linear Transfer Characteristics High Input Impedance Related Literature- TB334 Guidelines for Soldering Surface MountComponents to PC Boards DescriptionThese are N-Channel enhancement mode silicon gatepower field effect transistors. They are advanced powerMOSFETs designed, tested, and guaranteed to withstand aspecified level of energy in the breakdown avalanche modeof operation. All of these power MOSFETs are designed forapplications such as switching regulators, switching conver-tors, motor drivers, relay drivers, and drivers for high powerbipolar switching transistors requiring high speed and lowgate drive power.
5-7 irf510, irf511, irf512, irf513 test circuits and waveforms figure 15. unclamped energy test circuit figure 16. unclamped energy waveforms figure 17.
Tags:
Information
Domain:
Source:
Link to this page:
Please notify us if you found a problem with this document: