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Semiconductor IRF512, IRF513

5-1 SemiconductorFeatures , and , 80V and 100V rDS(ON)= and Single Pulse Avalanche Energy Rated SOA is Power Dissipation Limited Nanosecond Switching Speeds Linear Transfer Characteristics High Input Impedance Related Literature- TB334 Guidelines for Soldering Surface MountComponents to PC Boards DescriptionThese are N-Channel enhancement mode silicon gatepower field effect transistors. They are advanced powerMOSFETs designed, tested, and guaranteed to withstand aspecified level of energy in the breakdown avalanche modeof operation. All of these power MOSFETs are designed forapplications such as switching regulators, switching conver-tors, motor drivers, relay drivers, and drivers for high powerbipolar switching transistors requiring high speed and lowgate drive power.

5-7 irf510, irf511, irf512, irf513 test circuits and waveforms figure 15. unclamped energy test circuit figure 16. unclamped energy waveforms figure 17.

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Transcription of Semiconductor IRF512, IRF513

1 5-1 SemiconductorFeatures , and , 80V and 100V rDS(ON)= and Single Pulse Avalanche Energy Rated SOA is Power Dissipation Limited Nanosecond Switching Speeds Linear Transfer Characteristics High Input Impedance Related Literature- TB334 Guidelines for Soldering Surface MountComponents to PC Boards DescriptionThese are N-Channel enhancement mode silicon gatepower field effect transistors. They are advanced powerMOSFETs designed, tested, and guaranteed to withstand aspecified level of energy in the breakdown avalanche modeof operation. All of these power MOSFETs are designed forapplications such as switching regulators, switching conver-tors, motor drivers, relay drivers, and drivers for high powerbipolar switching transistors requiring high speed and lowgate drive power.

2 These types can be operated directly fromintegrated developmental type TO-220 ABOrdering InformationPART NUMBERPACKAGEBRANDIRF510TO-220 ABIRF510 IRF511TO-220 ABIRF511 IRF512TO-220 ABIRF512 IRF513TO-220 ABIRF513 NOTE: When ordering, include the entire part (FLANGE)DRAINGATEJ anuary 1998 CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Harris Corporation 1997 File , IRF511, irf512 , , and , 80V and 100V, and Ohm,N-Channel Power MOSFETs5-2 Absolute Maximum RatingsTC = 25oC, Unless Otherwise SpecifiedIRF510 IRF511 irf512 IRF513 UNITSD rain to Source Voltage (Note 1) .. VDS1008010080 VDrain to Gate Voltage (RGS =20k )(Note 1).. VDGR1008010080 VContinuous Drain Current.

3 = 100oC .. Drain Current (Note 3) .. IDM20201818 AGate to Source Voltage.. VGS 20 20 20 20 VMaximum Power Dissipation.. PD43434343 WLinear Derating Factor .. Pulse Avalanche Energy Rating (Note 4) .. EAS19191919mJOperating and Storage Temperature Range.. TJ, TSTG-55 to 175-55 to 175-55 to 175-55 to 175oCMaximum Temperature for SolderingLeads at ( ) from 25ase for 10s .. TLPackage Body for 10s, See Techbrief 334 ..Tpkg300260300260300260300260oCoCCAUTIO N: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the device. This is a stress only rating and operationof the device at these or any other conditions above those indicated in the operational sections of this specification is not :1.

4 TJ = 25oC to SpecificationsTC = 25oC, Unless Otherwise SpecifiedPARAMETERSYMBOLTEST CONDITIONSMINTYPMAXUNITSD rain to Source Breakdown VoltageBVDSSVGS = 0V, ID = 250 A, (Figure 10)IRF510 IRF512100--VIRF511, IRF51380--VGate to Threshold VoltageVGS(TH)VGS = VDS, ID = 250 Voltage Drain CurrentIDSSVDS = Rated BVDSS, VGS = 0V--25 AVDS = x Rated BVDSS, VGS = 0V TJ = 150oC--250 AOn-State Drain Current (Note 2)ID(ON)VDS> ID(ON) xrDS(ON)MAX,VGS = 10V,(Figure 7)IRF510, , to Source Leakage CurrentIGSSVGS = 20V-- 100nADrain to Source On Resistance (Note 2)rDS(ON)VGS = 10V, ID = , (Figures 8, 9)IRF510, irf512 , Forward Transconductance (Note 2)gfsVGS = 50V, ID = , (Figure 12) Delay Timetd(ON)ID , RGS = 24 , VDD = 50V, RL = 9 VDD = 50V, VGS = 10V, (Figures 17, 18)MOSFET switching times are essentiallyindependent of operating temperature-811nsRise Timetr-2536nsTurn-Off Delay Timetd(OFF)-1521nsFall Timetf-1221nsTotal Gate Charge(Gate to Source + Gate to Drain)Qg(TOT)VGS = 10V, ID = , VDS = x Rated BVDSS,IG(REF) = (Figures 14, 19, 20)Gate charge is essentially independent ofoperating to Source to Drain Miller , IRF511, irf512 , IRF5135-3 IRF510, IRF511, irf512 , IRF513 Input CapacitanceCISSVGS = 0V, VDS = 25V, f = , (Figure 11)

5 -135-pFOutput CapacitanceCOSS-80 - pFReverse-Transfer CapacitanceCRSS-20 - pFInternal Drain InductanceLDMeasured From theContact Screw On TabTo Center of DieModified MOSFETS ymbol Showing theInternal From theDrain Lead, 6mm( ) From Packageto Center of Source InductanceLSMeasured From TheSource Lead, 6mm( ) From Header toSource Bonding Resistance Junction to CaseR Resistance Junction to AmbientR JAFree air operation--80oC/WSource to Drain Diode SpecificationsPARAMETERSYMBOLTest ConditionsMINTYPMAXUNITSC ontinuous Source to Drain CurrentISDM odified MOSFETS ymbol Showing theIntegral ReverseP-N Junction Source to Drain Current(Note 3)ISDM--20 ASource to Drain Diode Voltage (Note 2)VSDTJ = 25oC, ISD= , VGS = 0V (Figure 13) Recovery TimetrrTJ = 25oC, ISD = , dISD/dt = 100A/ Recovered ChargeQRRTJ = 25oC, ISD = , dISD/dt = 100A/ CNOTES:2.

6 Pulse test: pulse width 300 s, duty cycle 2%.3. Repetitive rating: pulse width limited by max junction temperature. See Transient Thermal Impedance curve (Figure 3).4. VDD = 25V, start TJ = 25oC, L = 910 H, RG = 25 , peak IAS = (See Figure 15, 16).Electrical SpecificationsTC = 25oC, Unless Otherwise Specified (Continued)PARAMETERSYMBOLTEST CONDITIONSMINTYPMAXUNITSLDLSDSGDSG5-4 Typical Performance CurvesUnless Otherwise SpecifiedFIGURE 1. NORMALIZED POWER DISSIPATION vsCASE TEMPERATUREFIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vsCASE TEMPERATUREFIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCEFIGURE 4. FORWARD BIAS SAFE OPERATING AREAFIGURE 5. OUTPUT CHARACTERISTICSTC, CASE TEMPERATURE (oC)2550751001251501750 POWER DISSIPATION ,CASE TEMPERATURE (oC)507510015025175108604ID,DRAIN CURRENT (A)IRF510, IRF5112 irf512 , IRF513125Z JC, PULSEt1, RECTANGULAR PULSE DURATION (S)DUTY FACTOR: D = t1/t2 PEAK TJ= PDM x Z JC + TCt2 PDMt1 NOTES:THERMAL IMPEDANCE (oC/W) , DRAIN CURRENT (A)VDS, DRAIN TO SOURCE VOLTAGE (V)OPERATION IN THISREGION IS LIMITEDBY rDS(ON)TC = 25oCIRF510, 110 sIRF512, 3 IRF510, s1msDCIRF511, 3 IRF510, 2TJ = 175oCSINGLE PULSEVDS,DRAIN TO SOURCE VOLTAGE (V)10203040050108604ID, DRAIN CURRENT (A)VGS = 10 VVGS = 8 VVGS = 7 VVGS = 6 VVGS = 5 VVGS = 4V80 s PULSE TEST2 IRF510, IRF511, irf512 , IRF5135-5 FIGURE 6.

7 SATURATION CHARACTERISTICSFIGURE 7. TRANSFER CHARACTERISTICSFIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATEVOLTAGE AND DRAIN CURRENTFIGURE 9. NORMALIZED DRAIN TO SOURCE ONRESISTANCE vs JUNCTION TEMPERATUREFIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWNVOLTAGE vs JUNCTION TEMPERATUREFIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGET ypical Performance CurvesUnless Otherwise Specified (Continued)VDS,DRAIN TO SOURCE VOLTAGE (V)2468010108604ID, DRAIN CURRENT (A)VGS = 10 VVGS = 8 VVGS = 7 VVGS = 6 VVGS = 5 VVGS = 4V80 s PULSE TEST2 VDS 50V80 s PULSE TESTTJ = 175oCTJ = 25oCID(ON), ON-STATE DRAIN CURRENT (A)VGS, GATE TO SOURCE VOLTAGE (V) 246 810ID,DRAIN CURRENT (A) (ON), DRAIN TO SOURCEVGS = 20V80 s PULSE = 10 VON RESISTANCE ( ) 180-60TJ, JUNCTION TEMPERATURE (oC)NORMALIZED ON RESISTANCEID = -20204080100140120 VGS = 180-60TJ, JUNCTION TEMPERATURE (oC)NORMALIZED DRAIN TO SOURCEID = 250 -20204080 100140120 BREAKDOWN VOLTAGEVDS, DRAIN TO SOURCE VOLTAGE (V)C, CAPACITANCE (pF)

8 5004003002001000 VGS = 0V, f = 1 MHzCISS = CGS + CGDCRSS = CGDCOSS CDS + CGDCISSCOSSCRSS1251025102 IRF510, IRF511, irf512 , IRF5135-6 IRF510, IRF511, irf512 , IRF513 FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENTFIGURE 13. SOURCE TO DRAIN DIODE VOLTAGEFIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGET ypical Performance CurvesUnless Otherwise Specified (Continued)ID,DRAIN CURRENT (A) , TRANSCONDUCTANCE (S)80 s PULSE 50 VTJ = 175oCTJ = 25oCTJ = 175oCTJ = 25oCISD, SOURCE TO DRAIN CURRENT (A)VSD, SOURCE TO DRAIN VOLTAGE (V) (TOT), TOTAL GATE CHARGE (nC)246801020161208 VGS, GATE TO SOURCE VOLTAGE (V)VDS = 80V4 VDS = 50 VVDS = 20 VID = , IRF511, irf512 , IRF513 Test Circuits and WaveformsFIGURE 15. UNCLAMPED ENERGY TEST CIRCUITFIGURE 16.

9 UNCLAMPED ENERGY WAVEFORMSFIGURE 17. SWITCHING TIME TEST CIRCUITFIGURE 18. RESISTIVE SWITCHING WAVEFORMSFIGURE 19. GATE CHARGE TEST CIRCUITFIGURE 20. GATE CHARGE LIAS+-VDSVDDRGDUTVARY tP TO OBTAINREQUIRED PEAK IAS0 VVDDVDSBVDSStPIAStAV0 VGSRLRGDUT+-VDDtONtd(ON)tr90%10%VDS90%10 %tftd(OFF)tOFF90%50%50%10%PULSE F12 VBATTERY50k VDSSDUTDGIG(REF)0( FCURRENTREGULATORID CURRENTSAMPLINGIG CURRENTSAMPLINGSUPPLY)RESISTORRESISTORSA ME TYPEAS DUTQg(TOT)QgdQgsVDS0 VGSVDDIG(REF)0


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