Chapter 4. Basic Failure Modes and Mechanisms - NASA
temperatures (< 100°C) but it also indicates rapid deterioration at elevated temperatures (>150°C) [9]. The general understanding of ohmic contacts attributes the degradation to the following : (1) Ga outdiffusion into the Au layer, which creates a nonstochiometric defect-rich region of high resistivity under the contact. This effect is
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I. GaAs Material Properties
parts.jpl.nasa.govMobility is an important parameter for carrier transport because it describes how strongly the motion of an electron is influenced by an applied electric field. From the equation above, it is evident that mobility is related directly to the mean free time ... The resistivity of the semiconductor can be controlled by
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