Automotive P-Channel 60 V (D-S) 175 °C MOSFET

1 Siliconix S21-1074-Rev. B, 15-Nov-20211 Document Number: 66894 For technical questions, contact: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT P-Channel 60 V (D-S) 175 C MOSFETM arking Code: 9 DxxxFEATURES TrenchFET power MOSFET AEC-Q101 qualified 100 % Rg and UIS tested Material categorization: for definitions of compliance please see Pulse test; pulse width 300 s, duty cycle 2 %b. When mounted on 1" square PCB (FR4 material)PRODUCT SUMMARYVDS (V)-60 RDS(on) ( ) at VGS = -10 V (on) ( ) at VGS = V (A) ViewSOT-23 (TO-236)1G2SD3P- channel MOSFETSDGORDERING INFORMATIONP ackageSOT-23 Lead (Pb)-free and halogen-freeSQ2361ES (for detailed order number please see )ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)PARAMETER SYMBOLLIMITUNITD rain-source voltage VDS-60V Gate-source voltageVGS 20 Continuous drain currentTC = 25 C = 125 C source current (diode conduction)

2 Drain current aIDM -11 single pulse avalanche currentL = pulse avalanche energyEAS Maximum power dissipation aTC = 25 C PD2W TC = 125 C junction and storage temperature rangeTJ, Tstg-55 to +175 C THERMAL RESISTANCE RATINGSPARAMETER SYMBOLLIMITUNITJ unction-to-ambientPCB mount bRthJA175 C/WJunction-to-foot (drain) Siliconix S21-1074-Rev. B, 15-Nov-20212 Document Number: 66894 For technical questions, contact: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT Pulse test; pulse width 300 s, duty cycle 2 %b. Guaranteed by design, not subject to production testingc.

3 Independent of operating temperature Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device (TC = 25 C, unless otherwise noted)PARAMETER SYMBOLTEST CONDITIONS breakdown voltage VDSVGS = 0 V, ID = -250 A -60--V Gate-source threshold voltage VGS(th)VDS = VGS, ID = -250 A leakage IGSS VDS = 0 V, VGS = 20 V-- 100nA Zero gate voltage drain current IDSS VGS = 0 VVDS = -60 V---1 A VGS = 0 VVDS = -60 V, TJ = 125 C ---50 VGS = 0 VVDS = -60 V, TJ = 175 C ---150On-state drain current a ID(on) VGS = -10 VVDS -5 V-10--ADrain-source on-state resistance a RDS(on)

4 VGS = -10 VID = VGS = -10 VID = A, TJ = 125 = -10 VID = A, TJ = 175 = VID = A transconductance bgfs VDS = -10 V, ID = -2 A-5-S Dynamic bInput capacitanceCiss VGS = 0 V VDS = -30 V, f = 1 MHz-380550pF Output capacitanceCoss -5075 Reverse transfer capacitanceCrss -3042 Total gate charge cQg VGS = -10 V VDS = -30 V, ID = -6 A-912nC Gate-source charge cQgs charge cQgd resistanceRg f = 1 Turn-on delay time ctd(on) VDD = -30 V, RL = 20 ID A, VGEN = -10 V, Rg = 1 -811nsRise time ctr -912 Turn-off delay time ctd(off) -2226 Fall time ctf -46 Source-Drain Diode Ratings and Characteristics bPulsed current aISM---11 AForward voltageVSDIF = A, VGS = 0 Siliconix S21-1074-Rev.

5 B, 15-Nov-20213 Document Number: 66894 For technical questions, contact: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT CHARACTERISTICS (TA = 25 C, unless otherwise noted)Output CharacteristicsTransconductanceOn-Resist ance vs. Drain CurrentTransfer CharacteristicsOn-Resistance vs. Junction TemperatureOn-Resistance vs. Junction TemperatureID- Drain Current (A)036912012345 VDS - Drain-to-Source Voltage (V)VGS= 10 V thru 5 VVGS= 3 VVGS= 4 VVGS= 2 V02468100123456gfs - Transconductance (S)ID - Drain Current (A)TC = 125 CTC = -55 CTC = 25 (on) - On-Resistance ( )ID - Drain Current (A)VGS = VVGS = 10 V02468100246810ID - Drain Current (A)VGS - Gate-to-Source Voltage (V)TC = -55 CTC = 125 CTC = 25 50 - 250255075100 125 150 175 RDS(on) - On-Resistance (Normalized)TJ - Junction Temperature ( C)ID = AVGS = VVGS = 10 125 150 175 RDS(on) - On-Resistance (Normalized)TJ - Junction Temperature ( C)ID = AVGS = VVGS = 10 Siliconix S21-1074-Rev.

6 B, 15-Nov-20214 Document Number: 66894 For technical questions, contact: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT CHARACTERISTICS (TA = 25 C, unless otherwise noted)CapacitanceGate ChargeOn-Resistance vs. Gate-Source VoltageSource-Drain Diode Forward VoltageThreshold VoltageOn-Resistance vs. Gate-Source Voltage02004006008000 102030405060C - Capacitance (pF)VDS-Drain-to-Source Voltage (V)CissCossCrss02468100246810 VGS-Gate-to-Source Voltage (V)Qg- Total Gate Charge (nC)ID= 6 AVDS= 30 (on) - On-Resistance ( )VGS - Gate-to-Source Voltage (V)TJ = 150 CTJ = 25 CID = - Source Current (A)VSD - Source-to-Drain Voltage (V)TJ = 25 CTJ = 150 C- 50 - 250255075100 125 150 175 VGS(th) - Variance (V)TJ - Temperature ( C)ID = 250 AID = 5 (on) - Resistance ( )VGS - Gate-to-Source Voltage (V)TJ = 150 CTJ = 25 CID = Siliconix S21-1074-Rev.

7 B, 15-Nov-20215 Document Number: 66894 For technical questions, contact: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT RATINGS (TA = 25 C, unless otherwise noted)Drain-Source Breakdown vs. Junction TemperatureSafe Operating AreaNormalized Thermal Transient Impedance, Junction-to-Ambient-75-71-67-63-59-55-50 -250255075100 125 150 175 VDS - Drain-to-Source Voltage (V)TJ - Junction Temperature ( C)ID = 1 Drain Current (A)VDS-Drain-to-Source Voltage (V)* VGS> minimum VGSat which RDS(on)is specified100 msLimited by RDS(on)*1 msIDML imitedTC= 25 CSingle PulseBVDSS Limited10 ms100 s1 s10 Pulse Duty Cycle = Wave Pulse Duration (s)tneisnarT evitceffE dezilamroNecnadepmI lamrehT1.

8 Duty Cycle, D = 2. Per Unit Base = R thJA = 175 C/W 3. T JM - TA = PDMZthJA(t)t 1 t 2 t 1 t 2 Notes: 4. Surface Mounted P DM Siliconix S21-1074-Rev. B, 15-Nov-20216 Document Number: 66894 For technical questions, contact: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT RATINGS (TA = 25 C, unless otherwise noted)Normalized Thermal Transient Impedance, Junction-to-FootNote The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 C) - Normalized Transient Thermal Impedance Junction-to-Foot (25 C) are given for general guidelines only to enable the user to get a ball park indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements.

9 The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x ", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditionsVishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see single Pulse Duty Cycle = Square Wave Pulse Duration (s)tneisnarT evitceffE dezilamroNecnadepmI lamrehTVishay SiliconixPackage InformationDocument Number: (TO-236): 3-LEADbEE1132 See1DA2AA1 CSeating "CCL1 LqGauge PlaneSeating mmDimMILLIMETERS INCHES Min Max Min Max Refq3 8 3 8 ECN: S-03946-Rev.

10 K, 09-Jul-01 DWG: 5479 Application Note 826 Vishay Siliconix Document Number: : 21-Jan-0825 APPLICATION NOTERECOMMENDED MINIMUM PADS FOR ( )Recommended Minimum PadsDimensions in Inches/(mm) ( ) ( ) ( ) ( ) ( ) ( )Return to IndexReturn to IndexLegal Disclaimer Revision: 01-Jan-20221 Document Number: 91000 Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product.