TLMO1000, TLMS1000, TLMY1000 - farnell.com

1 tlmo1000 , tlms1000 , Semiconductors Rev. , 27-Sep-131 Document Number: 83172 For technical questions, contact: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT Current 0603 SMD LEDDESCRIPTIONThe new 0603 LED series have been designed in the smallest SMD package. This innovative 0603 LED technology opens the way to Smaller products of higher performance More design in flexibility Enhanced applicationsThe 0603 LED is an obvious solution for small-scale, high power products that are expected to work reliability in an arduous GROUP AND PACKAGE DATA Product group: LED Package: SMD 0603 Product series: low current Angle of half intensity: 80 FEATURES Smallest SMD package 0603 with exceptional brightness mm x mm x mm (L x W x H) High reliability lead frame based Temperature range -40 C to +100 C Footprint compatible to 0603 chipled Wavelength 633 nm (red), 606 nm (orange), 587 nm (yellow) AllnGaP technology Compatible to IR reflow soldering Viewing angle: Extremely wide 160 Grouping parameter.

2 Luminous intensity, wavelength Available in 8 mm tape Preconditioning according to JEDEC level 2 AEC-Q101 qualified Material categorization: For definitions of compliance please see APPLICATIONS Backlight keypads Navigation systems Cellular phone displays Displays for industrial control systems Automotive features Miniaturized color effects Traffic displaysNote(1)Driving the LED in reverse direction is suitable for short term application18562 PARTS TABLEPARTCOLORLUMINOUS INTENSITY(mcd)at IF(mA)WAVELENGTH(nm)at IF(mA)FORWARD VOLTAGE(V)at IF(mA) Soft MAXIMUM RATINGS (Tamb = 25 C, unless otherwise specified) tlms1000 , tlmo1000 , TLMY1000 PARAMETERTEST CONDITIONSYMBOLVALUEUNITR everse voltage (1)VR12 VDC Forward currentTamb 95 CIF15mASurge forward currenttp 10 dissipationPV40mWJunction temperatureTj120 COperating temperature rangeTamb-40 to +100 CStorage temperature rangeTstg-40 to +100 CSoldering temperatureacc.

3 Vishay specTsd260 CThermal resistance junction/ambientmounted on PC board (pad size > 5 mm2)RthJA500K/WTLMO1000, tlms1000 , Semiconductors Rev. , 27-Sep-132 Document Number: 83172 For technical questions, contact: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT Wavelengths are tested at a current pulse duration of 25 ms and an accuracy of 1 nmOPTICAL AND ELECTRICAL CHARACTERISTICS (Tamb = 25 C, unless otherwise specified) tlms1000 , REDPARAMETERTEST intensityIF = 2 wavelengthIF = 2 mA d624628636nmPeak wavelengthIF = 2 mA p-640-nmAngle of half intensityIF = 2 mA - 80- degForward voltageIF = 2 voltageIR = 10 AVR6- -VJunction capacitanceVR = 0 V, f = 1 MHzCj-15-pFOPTICAL AND ELECTRICAL CHARACTERISTICS (Tamb = 25 C, unless otherwise specified) tlmo1000 , SOFT ORANGEPARAMETERTEST intensityIF = 2 wavelengthIF = 2 mA d600605609nmPeak wavelengthIF = 2 mA p-610-nmAngle of half intensityIF = 2 mA - 80- degForward voltageIF = 2 voltageIR = 10 AVR6- -VJunction capacitanceVR = 0 V, f = 1 MHzCj-15-pFOPTICAL AND ELECTRICAL CHARACTERISTICS (Tamb = 25 C, unless otherwise specified) TLMY1000 , YELLOWPARAMETERTEST intensityIF = 2 wavelengthIF = 2 mA d580588595nmPeak wavelengthIF = 2 mA p-591-nmAngle of half intensityIF = 2 mA - 80- degForward voltageIF = 2 voltageIR = 10 AVR6- -VJunction capacitanceVR = 0 V, f = 1 MHzCj-15-pFCOLOR CLASSIFICATIONGROUPDOMINANT WAVELENGTH (nm) , tlms1000 , Semiconductors Rev.

4 , 27-Sep-133 Document Number: 83172 For technical questions, contact: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT Luminous intensity is tested at a current pulse duration of 25 ms and an accuracy of 11 %. The above type numbers represent the order groups which include only a few brightness groups. Only one group will be shipped on each reel (there will be no mixing of two groups on each reel). In order to ensure availability, single brightness groups will not be orderable. In a similar manner for colors where wavelength groups are measured and binned, single wavelength groups will be shipped in any one reel. In order to ensure availability, single wavelength groups will not be CHARACTERISTICS (Tamb = 25 C, unless otherwise specified) Fig. 1 - Relative Luminous Intensity vs.

5 Forward Current Fig. 2 - Forward Current vs. Forward Voltage Fig. 3 - Dominant Wavelength vs. Forward Current Fig. 4 - Change of Dominant Wavelength vs. Ambient TemperatureLUMINOUS INTENSITY CLASSIFICATIONGROUPLUMINOUS INTENSITY (mcd) Forward Current (mA)19127I- Relative Luminous Forward Voltage (V)19130I - Forward Current (mA)Forange- 1 - - - - 0 1 Dominant Wavelength (nm) d orangeI F - Forward Current (mA)- 6 - 4 - 2 0 2 4 6 8 - 20020406080100 Tamb - Ambient Temperature ( C)19136 d - Change of Dom. Wavelength (nm)orangeTLMO1000, tlms1000 , Semiconductors Rev. , 27-Sep-134 Document Number: 83172 For technical questions, contact: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT Fig. 5 - Relative Luminous Intensity vs. Ambient Temperature Fig.

6 6 - Forward Voltage vs. Ambient Temperature Fig. 7 - Relative Luminous Intensity vs. Forward Current Fig. 8 - Forward Current vs. Forward Voltage Fig. 9 - Dominant Wavelength vs. Forward Current Fig. 10 - Change of Dominant Wavelength Temperature0 T am b - Ambient Temperature ( C)19139I- Relative Luminous IntensityV rel orangeI F = 2 mA- - 20020406080100 Tamb- Ambient Temperature ( C)19143_1V - Forward Voltage (V)F orangeI F = 2 - Forward Current (mA)19128I - Relative Luminous Forward Voltage (V)19131I - Forward Current (mA)Fyellow19134yellow- 1 - - - - 0 1 Dominant Wavelength (nm) d I F - Forward Current (mA)- 6 - 4 - 2 0 2 4 6 8 10 19137yellow- Change of Dom. Wavelength (nm) d T amb- Ambient Temperature ( C)- 20200406080100 tlmo1000 , tlms1000 , Semiconductors Rev. , 27-Sep-135 Document Number: 83172 For technical questions, contact: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE.

7 THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT Fig. 11 - Relative Luminous Intensity vs. Ambient Temperature Fig. 12 - Forward Voltage vs. Ambient Temperature Fig. 13 - Relative Luminous Intensity vs. Forward Current Fig. 14 - Forward Current vs. Forward Voltage Fig. 15 - Dominant Wavelength vs. Forward Current Fig. 16 - Change of Dominant Wavelength Temperature19141yellowI F = 2 mA0 T am b - Ambient Temperature ( C)I- Relative Luminous IntensityV rel - amb- Ambient Temperature ( C)19144_1V - Forward Voltage (V)F yellowI F = 2 mA- 20 20 40 60 80 100 0 Forward Current (mA)19129I- Relative Luminous Forward Voltage (V)19132I - Forward Current (mA)Fred19135 redI F -F orward Current (mA) 1 - - - - 0 1 - Dominant Wavelength (nm) d - 4 - 2 0 2 4 6 19138red- Change of Dom.

8 Wavelength (nm) dT amb- Ambient Temperature ( C)- 20200406080100 tlmo1000 , tlms1000 , Semiconductors Rev. , 27-Sep-136 Document Number: 83172 For technical questions, contact: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT Fig. 17 - Relative Luminous Intensity vs. Ambient Temperature Fig. 18 - Forward Voltage vs. Ambient TemperatureREEL DIMENSIONS in millimeters19142redI F = 2 mA0 T am b - Ambient Temperature ( C)I- Relative Luminous IntensityV rel - 19145_1V - Forward Voltage (V)FredI F = 2 mAT amb- Ambient Temperature ( C)- 20 20 40 60 80 100 0 19043 tlmo1000 , tlms1000 , Semiconductors Rev. , 27-Sep-137 Document Number: 83172 For technical questions, contact: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE.

9 THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT DIMENSIONS in millimetersspecificationsaccording to DINT echnical drawingsDrawing-No.: : 3; of pulling outNot indicated tolerances : Conductive black + + - , tlms1000 , Semiconductors Rev. , 27-Sep-138 Document Number: 83172 For technical questions, contact: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT DIMENSIONS in millimeters SOLDERING PROFILE Fig. 19 - Vishay Lead (Pb)-free Reflow Soldering Profile(acc. to J-STD-020C)DRY PACKINGThe reel is packed in an anti-humidity bag to protect the devices from absorbing moisture during transportation and (s)Temperature ( C)255240 C245 Cmax. 260 Cmax.

10 120 smax. 100 s217 Cmax. 30 smax. Ramp Up 3 C/smax. Ramp Down 6 C/s255 C19470-4IR Reflow Soldering Profile for lead (Pb)-free SolderingPreconditioning acc. to JEDEC Level 2max. 2 cycles allowed Aluminum bagLabelReel15973 tlmo1000 , tlms1000 , Semiconductors Rev. , 27-Sep-139 Document Number: 83172 For technical questions, contact: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT PACKINGThe sealed reel is packed into a cardboard box. A secondary cardboard box is used for shipping METHOD OF STORAGEDry box storage is recommended as soon as the aluminum bag has been opened to prevent moisture absorption. The following conditions should be observed, if dry boxes are not available: Storage temperature 10 C to 30 C Storage humidity 60 % RH more than 1 year under these conditions moisture content will be too high for reflow case of moisture absorption, the devices will recover to the former condition by drying under the following condition:192 h at 40 C + 5 C / - 0 C and < 5 % RH (dry air/nitrogen) or 96 h at 60 C + 5 C and < 5 % RH for all device containers or 24 h at 100 C + 5 C not suitable for reel or EIA JEDEC standard JESD22-A112 level 2 label is included on all dry of JESD22-A112 level 2 labelESD PRECAUTIONP roper storage and handling procedures should be followed to prevent ESD damage to the devices especially when they are removed from the antistatic shielding bag.