N-Channel 40-V (D-S) MOSFET - Vishay …

1 Vishay SiliconixSi4456 DYDocument Number: 73852S09-0138-Rev. B, 40-V (D-S) MOSFETFEATURES Halogen-free According to IEC 61249-2-21 Available TrenchFET Gen II Power MOSFET 100 % Rg and UIS TestedAPPLICATIONS Secondary Rectification Point of LoadPRODUCT SUMMARY VDS (V)RDS(on) ( )ID (A)aQg (Typ.) at VGS = 10 V at VGS = V 31 Notes:a. Based on TC = 25 Surface Mounted on 1" x 1" FR4 t = 5 s. d. Maximum under steady state conditions is 80 MAXIMUM RATINGS TA = 25 C, unless otherwise notedParameter Symbol Limit Unit Drain-Source Voltage VDS40 VGate-Source Voltage VGS 20 Continuous Drain Current (TJ = 150 C)

2 TC = 25 CID33 ATC = 70 C27TA = 25 C23b, cTA = 70 C18b, cPulsed Drain Current IDM70 Continuous Source-Drain Diode CurrentTC = 25 = 25 , cAvalanche CurrentL = mHIAS40 Single Pulse Avalanche EnergyEAS80mJMaximum Power Dissipation TC = 25 = 70 = 25 , cTA = 70 , cOperating Junction and Storage Temperature Range TJ, Tstg- 55 to 150 THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambientb, dt 5 sRthJA2935 C/WMaximum Junction-to-Foot (Drain)Steady StateRthJF1316N-Channel MOSFETG D S SO-8 SD SD SD GD 5 6 7 8 Top View 2 3 4 1 Ordering Information:Si4456DY-T1-E3 (Lead (Pb)-free)Si4456DY-T1-GE3 (Lead (Pb)-free and Halogen-free) Number: 73852S09-0138-Rev.

3 B, 02-Feb-09 Vishay SiliconixSi4456 DYNotes:a. Pulse test; pulse width 300 s, duty cycle 2 %.b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operationof the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximumrating conditions for extended periods may affect device TJ = 25 C, unless otherwise notedParameter Symbol Test Conditions StaticDrain-Source Breakdown VoltageVDSVGS = 0 V, ID = 250 A 40 VVDS Temperature Coefficient VDS/TJID = 250 A 54mV/ CVGS(th) Temperature Coefficient VGS(th)/TJ- 7 Gate-Source Threshold VoltageVGS(th) VDS = VGS, ID = 250 A LeakageIGSSVDS = 0 V, VGS = 20 V 100nAZero Gate Voltage Drain CurrentIDSSVDS = 40 V, VGS = 0 V 1 AVDS = 40 V, VGS = 0 V, TJ = 55 C 10On-State Drain CurrentaID(on)

4 VDS = 5 V, VGS = 10 V30 ADrain-Source On-State ResistanceaRDS(on) VGS = 10 V, ID = 20 A VGS = V, ID = 15 A Transconductanceagfs VDS = 15 V, ID = 20 A 110 SDynamicbInput CapacitanceCiss VDS = 20 V, VGS = 0 V, f = 1 MHz5670pFOutput CapacitanceCoss 621 Reverse Transfer CapacitanceCrss 287 Total Gate ChargeQg VDS = 20 V, VGS = 10 V, ID = 20 A81122nCVDS = 20 V, VGS = V, ID = 20 ChargeQgs 17 Gate-Drain ChargeQgd 11 Gate ResistanceRgf = 1 Tu r n - O n D e l a y T i m etd(on) VDD = 20 V, RL = 2 ID 10 A, VGEN = V, Rg = 1 145220nsRise Timetr208320 Turn-Off DelayTimetd(off) 5685 Fall Timetf1523Tu r n - O n D e l a y T i m etd(on) VDD = 20 V, RL = 2 ID 10 A, VGEN = 10 V, Rg = 1 2132 Rise Timetr5890 Turn-Off DelayTimetd(off) 5585 Fall Timetf815 Drain-Source Body Diode CharacteristicsContinous Source-Drain Diode CurrentISTC = 25 C7 APulse Diode Forward CurrentaISM70 Body Diode VoltageVSDIS = 3 Diode Reverse Recovery TimetrrIF = 13 A, dI/dt = 100 A/ s, TJ = 25 C3860nsBody Diode Reverse Recovery ChargeQrr4265nCReverse Recovery Fall Timeta21nsReverse Recovery Rise Timetb17 Document Number: 73852S09-0138-Rev.

5 B, SiliconixSi4456 DYTYPICAL CHARACTERISTICS TA = 25 C, unless otherwise notedOutput CharacteristicsOn-Resistance vs. Drain Current and Gate VoltageGate Charge0 14 28 42 56 70 = 10 V thru 4 VVGS = 3 VVDS - Drain-to-Source Voltage (V))A( tnerruC niarD 0 102030405060 ID - Drain Current (A)R)no(SDm ( ecnatsiseR-nO -)VGS = 10 VVGS = V0 2 4 6 8 10 0 1734516885 ID = 20 A)V( egatloV ecruoS-ot-etaG -Q g - Total Gate Charge (nC)VSGVDS = 10 VVDS = 20 VVDS = 30 VTransfer CharacteristicsCapacitanceOn-Resistance vs. Junction 012345 VGS - Gate-to-Source Voltage (V))A( tnerruC niarD -IDTC = 25 C TC = 125 C TC = - 55 C 0 1400 2800 4200 5600 7000 0816243240 C rss CossCissVDS - Drain-to-Source Voltage (V))Fp( ecnaticapaC - - 50- 250255075100125150TJ- Junction Temperature ( C)R)no(SDecnatsiseR-nO - )dezilamroN(V GS = 10 V, I D = 20 A V GS = V, I D = 20 A Number: 73852S09-0138-Rev.

6 B, 02-Feb-09 Vishay SiliconixSi4456 DYTYPICAL CHARACTERISTICS TA = 25 C, unless otherwise notedSource-Drain Diode Forward VoltageThreshold - Source-to-Drain Voltage (V))A( tnerruC ecruoS -IS110 = 150 C TA = 25 C - - - - - 50- 250255075100125150T J - Temperature ( C)V)ht(SG)V( ID = 250 AID = 5 mAOn-Resistance vs. Gate-to-Source VoltageSingle Pulse Power, 0246810 VGS - Gate-to-Source Voltage (V)R)no(SD( ) ecnatsiseR-nO ecruoS-ot-niarD -T A = 25 C TA = 125 C ) W ( r e w o P Time (s)10 80 Safe Operating Area, Junction-to-Ambient10 )A( tnerruC niarD -ID1 VDS - Drain-to-Source Voltage (V)* VGS minimum VGS at which RDS(on) is specified 100 T A = 25 C Single Pulse DS(on)* Limited by R1 ms10 ms100 ms1 s10 1 10 100 Document Number: 73852S09-0138-Rev. B, SiliconixSi4456 DYTYPICAL CHARACTERISTICS TA = 25 C, unless otherwise noted* The power dissipation PD is based on TJ(max) = 150 C, using junction-to-case thermal resistance, and is more useful in settling the upperdissipation limit for cases where additional heatsinking is used.

7 It is used to determine the current rating, when this rating falls below the Derating*0 8 16 24 32 40 0255075100125150ID)A( tnerruC niarD - TC - Case Temperature ( C)Power, Junction-to-Foot0 2 4 6 8 10 0255075100125150 T C - Case Temperature ( C)r (W)ewoPPower, 0 255075100125150 TA - Ambient Temperature ( C)r (W) Number: 73852S09-0138-Rev. B, 02-Feb-09 Vishay SiliconixSi4456 DYTYPICAL CHARACTERISTICS TA = 25 C, unless otherwise notedVishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for SiliconTechnology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, andreliability data, see Thermal Transient Impedance, Junction-to-Ambient 1 10 Square Wave Pulse Duration (s) t n e i s n a r T e v i t c e f f E d e z i l a m r o N e c n a d e p m I l a m r e h T 1.

8 Duty Cycle, D = 2. Per Unit Base = R thJA = 60 C/W 3. T JM T = P DM Z thJA (t) t 1 t 2 4. Surface Mounted 1000 100 1 t 1 t 2 Notes: P DM 10 -3 10 -2 10 -1 Normalized Thermal Transient Impedance, Junction-to-Foot10 -3 10 -2 110 10 -1 10 -4 Square Wave Pulse Duration (s)1 t n e i s n a r T e v i t c e f f E d e z i l a m r o N e c n a d e p m I l a m r e h T Duty Cycle = PulseVishay SiliconixPackage InformationDocument Number: 8 0 8 : C-06527-Rev. I, 11-Sep-06 DWG: 549843125687 HEh x 45 CAll " mm (Gage Plane)SOIC (NARROW): 8-LEADJEDEC Part Number: MS-012 SApplication Note 826 Vishay Siliconix Number: 7260622 Revision: 21-Jan-08 APPLICATION NOTERECOMMENDED MINIMUM PADS FOR ( )Recommended Minimum PadsDimensions in Inches/(mm) ( ) ( ) ( ) ( ) ( ) ( )Return to IndexReturn to IndexLegal Disclaimer Revision: 08-Feb-171 Document Number: 91000 Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

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