NEW PRODUCT - Diodes Incorporated

1 DMP3099L Document number: DS36081 Rev. 3 - 2 1 of 6 May 2013 Diodes Incorporated DMP3099 LNEW PRODUCT P-CHANNEL ENHANCEMENT MODE MOSFET PRODUCT Summary V(BR)DSS RDS(ON) max ID max TA = +25 C -30V 65m @ VGS = -10V 99m @ VGS = Description This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications Backlighting Power Management Functions DC-DC Converters Features and Benefits Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) Halogen and Antimony Free.

2 Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Mechanical Data Case: SOT23 Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Weight: grams (approximate) Ordering Information (Note 4) Part Number Compliance Case Packaging DMP3099L-7 Standard SOT23 3000/Tape & Reel DMP3099L-13 Standard SOT23 10000/Tape & Reel Notes: 1.

3 No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See for more information about Diodes Incorporated s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http Marking Information Date Code Key Year 2008 2009 2010 2011 2012 2013 2014 2015 Code V W X Y Z A B C Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D

4 SOT23 Top View DGSTop View Pin Configuration D99= PRODUCT Type Marking Code YM = Date Code Marking Y = Year (ex: V = 2008) M = Month (ex: 9 = September) Equivalent Circuit D99 YMe3 DMP3099L Document number: DS36081 Rev. 3 - 2 2 of 6 May 2013 Diodes Incorporated DMP3099 LNEW PRODUCT Maximum Ratings (@TA = +25 C, unless otherwise specified.) Characteristic Symbol Value Units Drain-Source Voltage VDSS -30 V Gate-Source Voltage VGSS 20 V Drain Current (Note 5) VGS = -10V Steady State TA = +25 CTA = +70 CID A Pulsed Drain Current (Note 6)

5 IDM -11 A Thermal Characteristics Characteristic Symbol Value Units Total Power Dissipation (Note 5) PD W Thermal Resistance, Junction to Ambient @TA = +25 C (Note 5) R JA 115 C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 C Electrical Characteristics (@TA = +25 C, unless otherwise specified.)

6 Characteristic SymbolMinTypMaxUnit Test ConditionOFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BVDSS -30 V VGS = 0V, ID = -250 A Zero Gate Voltage Drain Current IDSS -800 nA VDS = -30V, VGS = 0V Gate-Source Leakage IGSS 100 nA VGS = 20V, VDS = 0V ON CHARACTERISTICS (Note 7) Gate Threshold Voltage VGS(th) V VDS = VGS, ID = -250 A Static Drain-Source On-Resistance RDS(ON) 65 99 m VGS = -10V, ID = VGS = , ID = Forward Transfer Admittance |Yfs| S VDS = -5V, ID = Diode Forward Voltage (Note 6) VSD V VGS = 0V, IS = DYNAMIC CHARACTERISTICS (Note 8)

7 Input Capacitance Ciss 563 pF VDS = -25V, VGS = 0V, f = Output Capacitance Coss 48 pF Reverse Transfer Capacitance Crss 41 pF Gate Resistance RG VGS = 0V VDS = 0V, f = 1 MHz SWITCHING CHARACTERISTICS (Note 8) Total Gate Charge Qg nC VDS = -15V, VGS = , ID = 11 VDS = -15V, VGS = -10V, ID = Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) ns VDS = -15V, VGS = -10V, ID = -1A, RG = Rise Time tr Turn-Off Delay Time td(off) 31 Fall Time tf 15 Notes: 5.

8 Device mounted on FR-4 PCB on 2 oz., copper pads and t 5 sec. 6. Pulse width 10 S, Duty Cycle 1%. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. DMP3099L Document number: DS36081 Rev. 3 - 2 3 of 6 May 2013 Diodes Incorporated DMP3099 LNEW PRODUCT I, DRAIN CURRENT (A) , DRAIN-SOURCE VOLTAGE (V)Figure 1 Typical Output CharacteristicsDSV= V= V= V= V= -10 VGS V= -V , GATE-SOURCE VOLTAGE (V)GSFigure 2 Typical Transfer Characteristics -I , DRAIN CURRENT (A)D0481216200123456V= T = 150 CAT = 125 CAT = 85 CAT = 25 CAT = -55 CA I , DRAIN-SOURCE CURRENT (A)D Figure 3 Typical On-Resistance vs.

9 Drain Current and Gate Voltage R, DRAIN-SOURCE ON-RESISTANCE ( )DS(ON) V= -10 VGS -I , DRAIN CURRENT (A)DFigure 4 Typical On-Resistance vs. Drain Current and TemperatureR, DRAIN-SOURCE ON-RESISTANCE ( )DS(ON) 8121620T = -55 CAT = 25 CAT = 85 CAT = 125 CAT = 150 CAV= T , AMBIENT TEMPERATURE ( C)Figure 5 On-Resistance Variation with TemperatureA R, DRAIN-SOURCE ON-RESISTANCE (NORMALIZED)DS(ON) 0 25 50 75100125150V = = = -10VI = , JUNCTION TEMPERATURE ( C)Figure 6 On-Resistance Variation with TemperatureJ R, DRAIN-SOURCE ON-RESISTANCE ( )DS(ON) 125 150V= V=VI= 10 DMP3099L Document number: DS36081 Rev.

10 3 - 2 4 of 6 May 2013 Diodes Incorporated DMP3099 LNEW PRODUCT T , AMBIENT TEMPERATURE ( C)Figure 7 Gate Threshold Variation vs. Ambient TemperatureA V, GATE THRESHOLD VOLTAGE (V)GS(th) 150I= -1mAD I = -250 AD V , SOURCE-DRAIN VOLTAGE (V)SDFigure 8 Diode Forward Voltage vs. CurrentI, SOURCE CURRENT (A) 25 CA V , DRAIN-SOURCE VOLTAGE (V)DSFigure 9 Typical Junction CapacitanceC, JUNCTION CAPACITANCE (pF)T101001000051015202530f = 1 MHzCissCossCrssQ(nC)g, TOTAL GATE CHARGE Figure 10 Gate ChargeV GATE THRESHOLD VOLTAGE (V)GS012345678910024681012V= 15VI= ADSD DMP3099L Document number: DS36081 Rev.