High Speed Optocoupler, 10 MBd - Vishay …

1 Semiconductors Rev. , 22-May-131 Document Number: 84131 For technical questions, contact: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT Speed optocoupler , 10 MBdDESCRIPTIONThe 6N137A is single channel 10 mbd optocouplers utilizing a high efficient input LED coupled to a very high Speed integrated photo-detector logic gate with a strobable output. This detector features an open collector. The internal shield provides a guaranteed common mode transient immunity of 1 kV/ s. The use of a F bypass capacitor connected between pin 5 and 8 is APPROVALS(Parts are certified under base model 6N137A) UL1577 file number: E52744, double protection cUL tested to CSA bulletin 5A DIN EN 60747-5-5 (VDE 0884-5), available with option 1 CQC GB8898, CMR performance of 1 kV/ s high Speed : 10 mbd typical LSTTL/TTL compatibility Low input current capability: 5 mA Material categorization: For definitions of compliance please see APPLICATIONS Microprocessor system interface PLC, ATE input/output isolation Computer peripheral interface Digital fieldbus isolation.

2 CC-link, DeviceNet, profibus, SDS high Speed A/D and D/A conversion AC plasma display panel level shifting Multiplexed data transmission Digital control power supply Ground loop elimination Note Additional options may be possible, please contact sales Table (Positive Logic)LED ENABLE OUTPUTONOFFONOFFONOFFHLHHLHLHNCLNCH18921 -35 ORDERING INFORMATION6N137A-X00#TPART NUMBERPACKAGE OPTIONTAPEANDREELAGENCY CERTIFIED/PACKAGECMR (V/ s)UL, cUL, CQC1000 DIP-86N137 ASMD-8, option 76N137A-X007 TVDE, UL, cUL, CQC1000 DIP-86N137A-X001 SMD-8, option mmDIP-8 Option 7> 7 mm Semiconductors Rev. , 22-May-132 Document Number: 84131 For technical questions, contact: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT Stresses in excess of the absolute maximum ratings can cause permanent damage to the device.

3 Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability.(1)Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through hole devices (DIP). Fig. 1 - Total Power Dissipation vs. Ambient TemperatureABSOLUTE MAXIMUM RATINGS (Tamb = 25 C, unless otherwise specified)PARAMETERTEST CONDITIONSYMBOLVALUEUNITINPUTA verage forward currentIF20mAReverse input voltageVR5 VEnable input voltageVEVCC + VVEnable input currentIE5mAOutput power dissipationPdiss35mWOUTPUTS upply voltage1 min maximumVCC7 VOutput currentIO50mAOutput voltageVO7 VOutput power dissipationPdiss85mWCOUPLERI solation test voltaget = 1 minVISO5000 VRMSS torage temperatureTstg- 55 to + 125 COperating temperatureTamb- 40 to + 85 CSolder reflow temperature (1)

4 5 s260 CRECOMMENDED OPERATING CONDITIONSPARAMETERTEST temperatureTamb- 4085 CSupply current low levelIFL0250 AInput current high levelIFH515mALogic high enable voltageVEH2 VCCVL ogic low enable pull up resistorRL3304K FanoutRL = 1 k N5-0 20 40 60 80 100 0 255075100 Ptot - Total Power Dissipation (mW) Tamb - Ambient Temperature ( C) Output Input Semiconductors Rev. , 22-May-133 Document Number: 84131 For technical questions, contact: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing Over recommended temperature (Tamb = - 40 C to + 85 C), VCC = 5 V, IF = mA, unless otherwise specified.

5 Typical values applies to VCC = 5 V, Tamb = 25 C(1)A JEDEC registered data for 6N137 AELECTRICAL CHARACTERSITCS (Tamb = 25 C, unless otherwise specified)PARAMETERTEST forward voltageIF = 10 forward voltage temperature coefficientIF = 10 mA VF/ T- mV/KInput reverse voltageIR = 10 ABVR5 VInput threshold currentVE = 2 V, VCC = V,IOL (sinking) = 13 capacitancef = 1 MHz, VF = 0 VCI28pFOUTPUTHigh level supply currentVE = V, IF = 0 mAICCH810mAVE = VCC, IF = 10 level supply currentVE = V, IF = 0 mAICCL1013mAVE = VCC, IF = 10 mA8 high level enable currentVE = 2 VIEH- level enable currentVE = VIEL- level enable voltageVEH2 VLow level enable level output currentVE = 2 V, VCC = V,VO = V, IF = 250 ALow level output voltageVE = 2 V, VCC = V,IF = 5 mA, IOL (sinking) = 13 emitter capacitancef = 1 MHz, Tamb = 25 CCIO4pFCOUPLERC oupling capacitancef = 1 MHz, Tamb = 25 CHARACTERISTICSPARAMETERTEST delay time to high output levelRL = 350 , CL = 15 pFtPLH254575 (1)nsPropagation delay time to low output levelRL = 350 , CL = 15 pFtPHL253275 (1)nsPulse width distortionRL = 350 , CL = 15 pF|tPHL - tPLH|1335nsPropagation delay skewRL = 350 , CL = 15 pFtPSK1640nsOutput rise time (10 % to 90 %)RL = 350 , CL = 15 pFtr27nsOutput fall time (90 % to 10 %)RL = 350 , CL = 15 pFtf10nsPropagation delay time of enable from VEH to VELRL = 350 , CL = 15 pF,VEL = 0 V, VEH = 3 VtELH47nsPropagation delay time of enable from VEL to VEHRL = 350 , CL = 15 pF,VEL = 0 V, VEH = 3 VtEHL24ns Semiconductors Rev.

6 , 22-May-134 Document Number: 84131 For technical questions, contact: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT Fig. 2 - Test Circuit for tPLH, tPHL, tr, and tf Fig. 3 - Test Circuit for tEHL, and tELHN otes(1)CMH is the maximum tolerable rate of rise of the common mode voltage to assure that the output will remain in a high logic state ( VO > V)(2)CML is the maximum tolerable rate of fall of the common mode voltage to assure that the output will remain in a low logic state ( VO > V)(3)No external pull up is required for a high logic state on the enable input. If the enable pin in not used, trying it to VCC. Fig. 4 - Test Circuit for Common Mode Transient ImmunityCOMMON MODE TRANSIENT IMMUNITYPARAMETERTEST high common mode transient immunity (1)(3)|VCM| = 50 V, VCC = 5 V, IF = 0 mA,VO(min.)

7 = 2 V, RL = 350 , Tamb = 25 C|CMH|1000V/ sLogic low common mode transient immunity (2)(3)|VCM| = 50 V, VCC = 5 V, IF = mA,VO(min.) = 0 V, RL = 350 , Tamb = 25 C|CML|1000V/ s18964-712348765 The probe and Jig capacitances are included in CInput IFOutput VOIF0 VtPHLtPLHVOHC = 15 FbypassVCCVOUTVCCIFRRLI nput IFmonitoringnodeOutput VOmonitoringnodeLPulse = 50 t = t = 5 nsofrML= mAIF= mAVE18975-512348765 The probe and Jig capacitances are included in CInput VEOutput VOtEHLtELHC = 15 FbypassVCCVOUTVCCIFRLO utput VOmonitoringnodeLPulse = 50 t = t = 5 mAInput Vmonitoring nodeE3 VVE18976-6 VCM(PEAK)Switch AT A: IFSwitch AT A:V O(min. V O(max.) 0 V5 VV CMV OV VCM HCM L1 2 3 4 8 7 6 5 GND FbypassV CCVOUTVCCR LOutput V Omonitoringnode+ - VCMB A V FFI FPulse generatorZ = 50 OVE) = 0 mAIF= mA Semiconductors Rev.

8 , 22-May-135 Document Number: 84131 For technical questions, contact: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT As per DIN EN 60747-5-5, , this optocoupler is suitable for safe electrical insulation only within the safety ratings. Compliance with the safety ratings shall be ensured by means of prodective CHARACTERISTICS (Tamb = 25 C, unless otherwise specified) Fig. 5 - Diode Forward Current vs. Forward Voltage Fig. 6 - Input Threshold On Current vs. Ambient Temperature Fig. 7 - Input Threshold Off Current vs. Ambient Temperature Fig. 8 - Low Level Output Voltage vs. Ambient TemperatureSAFETY AND INSULATION RATINGS PARAMETERSYMBOLVALUEUNITMAXIMUM SAFETY RATINGSO utput safety powerPSO600mWInput safety currentIsi230mASafety temperatureTS175 CComparative tracking indexCTI175 INSULATION RATED PARAMETERSM aximum withstanding isolation voltageVISO5000 VRMSM aximum transient isolation voltageVIOTM6000 VpeakMaxium repetitive peak isolation voltageVIORM630 VpeakInsulation resistanceTamb = 25 C, VDC = 500 VRIO1012 Isolation resistanceTamb = 100 C, VDC = 500 VRIO1011 Climatic classification (according to IEC 68 part 1)40/85/21 Environment (pollution degree in accordance to DIN VDE 0109)2 Maximum creepage7mmClearance7mmInsulation 10 100 IF - Forward Current (mA) VF - Forward Voltage (V)

9 0 2 4 6 8 10 12 - 40 - 20 0 20 40 60 80 ITH - Input Threshold On Current (On) (mA) Tamb - Ambient Temperature ( C) VE = 2 V VO = V RL = 4 k RL = 350 RL = 1 k 0 2 4 6 8 10 12 - 40 - 20 0 20 40 60 80 ITH - Input Threshold Off Current (On) (mA) Tamb - Ambient Temperature ( C) VE = 2 V VO = V RL = 4 k RL = 350 RL = 1 k 0 - 40 - 20 0 20 40 60 80 VOL - Low Level Output Voltage (V) Tamb - Ambient Temperature ( C) VCC = V VE = 2 V IF = 5 mA IL = 16 mA IL = 13 mA IL = 10 mA IL = 6 mA Semiconductors Rev. , 22-May-136 Document Number: 84131 For technical questions, contact: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT Fig.

10 9 - Low Level Output Current vs. Ambient Temperature Fig. 10 - high Level Output Current vs. Ambient Temperature Fig. 11 - Output Voltage vs. Diode Forward Current Fig. 12 - Propagation Delay Time vs. Ambient Temperature Fig. 13 - Propagation Delay Time vs. Diode Forward Current Fig. 14 - Pulse Width Distortion vs. Ambient Temperature0 10 20 30 40 50 60 - 40 - 20 0 20 40 60 80 IOL - Low Level Output Current (mA) Tamb - Ambient Temperature ( C) IF = 10 mA IF = 5 mA 0 5 10 15 20 25 30 35 40 - 40 - 20 0 20 40 60 80 IOH - high Level Output Current (nA) Tamb - Ambient Temperature ( C) VE = 2 V VO = V IF = 250 A 0 1 2 3 4 5 6 0 1 2 3 4 5 VO - Output Voltage (V) IF - Forward Current (mA) VCC = 5 V RL = 350 RL = 1 k RL = 4 k 0 20 40 60 80 100 120 - 40 - 20 0 20 40 60 80 tp - Propagation Delay Time (ns) Tamb - Ambient Temperature ( C)