Example: bachelor of science

2N5457 MMBF5457 2N5458 MMBF5458 2N5459 MMBF5459

2N5457 / 2N5458 / 2N5459 / MMBF5457 / MMBF5458 / MMBF5459 Discrete POWER & SignalTechnologies2N54572N54582N5459 MMBF5457 MMBF5458 MMBF5459N-Channel General Purpose AmplifierThis device is a low level audio amplifier and switching transistors,and can be used for analog switching applications. Sourced fromProcess Maximum Ratings* TA = 25 C unless otherwise notedSymbolParameterValueUnitsVDGD rain-Gate Voltage25 VVGSGate-Source Voltage- 25 VIGFF orward Gate Current10mATJ, TstgOperating and Storage Junction Temperature Range-55 to +150 C*These ratings are limiting values above which the serviceability of any semiconductor device may be Characteristics TA = 25 C unless otherwise notedNOTES:1) These ratings are based on a maximum junction temperature of 150 degrees ) These are steady state limits.

2N5457 / 2N5458 / 2N5459 / MMBF5457 / MMBF5458 / MMBF5459 Electrical Characteristics TA = 25°C unless otherwise noted OFF CHARACTERISTICS Symbol Parameter Test Conditions Min Typ Max Units

Information

Domain:

Source:

Link to this page:

Please notify us if you found a problem with this document:

Other abuse

Advertisement

Transcription of 2N5457 MMBF5457 2N5458 MMBF5458 2N5459 MMBF5459

1 2N5457 / 2N5458 / 2N5459 / MMBF5457 / MMBF5458 / MMBF5459 Discrete POWER & SignalTechnologies2N54572N54582N5459 MMBF5457 MMBF5458 MMBF5459N-Channel General Purpose AmplifierThis device is a low level audio amplifier and switching transistors,and can be used for analog switching applications. Sourced fromProcess Maximum Ratings* TA = 25 C unless otherwise notedSymbolParameterValueUnitsVDGD rain-Gate Voltage25 VVGSGate-Source Voltage- 25 VIGFF orward Gate Current10mATJ, TstgOperating and Storage Junction Temperature Range-55 to +150 C*These ratings are limiting values above which the serviceability of any semiconductor device may be Characteristics TA = 25 C unless otherwise notedNOTES:1) These ratings are based on a maximum junction temperature of 150 degrees ) These are steady state limits.

2 The factory should be consulted on applications involving pulsed or low duty cycle * MMBF5457 PDTotal Device DissipationDerate above 25 / CR JCThermal Resistance, Junction to C/WR JAThermal Resistance, Junction to Ambient200357 C/WGSDTO-92 SOT-23 Mark: 6D / 61S / 6 LGSD*Device mounted on FR-4 PCB " X " X " 1997 Fairchild Semiconductor Corporation2N5457 / 2N5458 / 2N5459 / MMBF5457 / MMBF5458 / MMBF5459 Electrical Characteristics TA = 25 C unless otherwise notedOFF CHARACTERISTICSS ymbolParameterTest ConditionsMinTyp Max UnitsON CHARACTERISTICSSMALL SIGNAL CHARACTERISTICSV(BR)GSSGate-Source Breakdown VoltageIG = 10 A, VDS = 0- 25 VIGSSGate Reverse CurrentVGS = -15 V, VDS = 0 VGS = -15 V, VDS = 0, TA = 100 C- 200nAnAVGS(off)

3 Gate-Source Cutoff VoltageVDS = 15 V, ID = 10 nA2N54572N54582N5459- VoltageVDS = 15 V, ID = 100 A2N5457 VDS = 15 V, ID = 200 A2N5458 VDS = 15 V, ID = 400 A2N5459- Voltage Drain Current*VDS = 15 V, VGS = 0 Transfer Conductance*VDS = 15 V, VGS = 0, f = kHz2N54572N54582N54591000150020005000550 06000 mhos mhos mhosgosOutput Conductance*VDS = 15 V, VGS = 0, f = kHz1050 mhosCissInput CapacitanceVDS = 15 V, VGS = 0, f = Transfer CapacitanceVDS = 15 V, VGS = 0, f = FigureVDS = 15 V, VGS = 0, f = kHz,RG = megohm, BW = CharacteristicsTransfer CharacteristicsTypical Characteristics*Pulse Test: Pulse Width 300 ms, Duty Cycle 2%N-Channel General Purpose Amplifier(continued) 2N5457 / 2N5458 / 2N5459 / MMBF5457 / MMBF5458 / MMBF5459 Typical Characteristics (continued)Output Conductance CurrentTransfer CharacteristicsTransconductance CurrentParameter InteractionTransfer CharacteristicsCommon Drain-SourceN-Channel General Purpose Amplifier(continued) 2N5457 / 2N5458 / 2N5459 / MMBF5457 / MMBF5458 / MMBF5459 Typical Characteristics (continued)Capacitance vs.

4 VoltageLeakage Current vs. VoltageChannel Resistance Voltage General Purpose Amplifier(continued)


Related search queries