Dual P-Channel 12 V (D-S) MOSFET - Vishay Intertechnology

1 Vishay SiliconixSi1965 DHDocument Number: 68765S10-0792-Rev. B, P-Channel 12 V (D-S) MOSFETPRODUCT SUMMARY VDS (V)RDS(on) ( )ID (A)Qg (Typ.)- at VGS = - V - at VGS = - V - at VGS = - V - CodeDE XXLot Traceabilityand Date CodePart # CodeYYSOT-363SC-70 (6-LEADS)641235 Top ViewS1G1D2D1G2S2D2S2G2D1S1G1 Ordering Information: Si1965DH-T1-E3 (Lead (Pb)-free) Si1965DH-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFETP- channel MOSFETN otes:a. Package Surface mounted on 1" x 1" FR4 t = 5 s. d. Maximum under steady state conditions is 220 MAXIMUM RATINGS TA = 25 C, unless otherwise notedParameter Symbol Limit Unit Drain-Source Voltage VDS- 12 VGate-Source Voltage VGS 8 Continuous Drain Current (TJ = 150 C)

2 TC = 25 CID- = 70 C- = 25 C- , cTA = 70 C- , cPulsed Drain CurrentIDM- 3 Continuous Source-Drain Diode Current TC = 25 CIS- 1TA = 25 C- , cMaximum Power DissipationTC = 25 = 70 = 25 , cTA = 70 , cOperating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 CTHERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit Maximum Junction-to-Ambientb, dt 5 sRthJA130170 C/WMaximum Junction-to-Foot (Drain)Steady StateRthJF80100 FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET Power MOSFET Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Load Switch for Portable Number: 68765S10-0792-Rev.

3 B, 05-Apr-10 Vishay SiliconixSi1965 DHNotes:a. Pulse test; pulse width 300 s, duty cycle 2 %.b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operationof the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximumrating conditions for extended periods may affect device TJ = 25 C, unless otherwise notedParameter Symbol Test Conditions StaticDrain-Source Breakdown VoltageVDS VGS = 0 V, ID = - 250 A - 12 VVDS Temperature Coefficient VDS/TJID = - 250 A - 14mV/ CVGS(th) Temperature Coefficient VGS(th)/TJ2 Gate-Source Threshold VoltageVGS(th)

4 VDS = VGS , ID = - 250 A - LeakageIGSSVDS = 0 V, VGS = 8 V 100nAZero Gate Voltage Drain CurrentIDSSVDS = - 12 V, VGS = 0 V- 1 AVDS = - 12 V, VGS = 0 V, TJ = 85 C - 10On-State Drain CurrentaID(on) VDS - 5 V, VGS = - V - 3 ADrain-Source On-State ResistanceaRDS(on)VGS = - V, ID = - A VGS = - V, ID = - A = - V, ID = - A TransconductanceagfsVDS = - 6 V, ID = - A CapacitanceCiss VDS = - 6 V, VGS = 0 V, f = 1 MHz120pFOutput CapacitanceCoss 41 Reverse Transfer CapacitanceCrss 25 Total Gate ChargeQg VDS = - 6 V, VGS = - 8 V, ID = - = - 6 V, VGS = - V.

5 ID = - ChargeQgs ResistanceRgf = 1 Tu r n - O n D e l a y T i m etd(on) VDD = - 6 V, RL = ID - A, VGEN = - V, Rg = 1 1220nsRise Timetr 2740 Turn-Off Delay Timetd(off) 1525 Fall Timetf1015Tu r n - O n D e l a y T i m etd(on) VDD = - 6 V, RL = ID - A, VGEN = - 8 V, Rg = 1 25 Rise Timetr 1220 Turn-Off Delay Timetd(off) 1220 Fall Timetf1015 Drain-Source Body Diode CharacteristicsContinuous Source-Drain Diode CurrentISTC = 25 C- Diode Forward CurrentaISM- Diode VoltageVSDIS = - A- Diode Reverse Recovery TimetrrIF = - A, dI/dt = 100 A/ s, TJ = 25 C2040nsBody Diode Reverse Recovery ChargeQrr1020nCReverse Recovery Fall Recovery Rise Number.

6 68765S10-0792-Rev. B, SiliconixSi1965 DHTYPICAL CHARACTERISTICS 25 C, unless otherwise noted Output CharacteristicsOn-Resistance vs. Drain Current and Gate VoltageGate Drain-to-SourceVoltage (V)- Drain Current (A)IDVGS= On-Resistance ( )RDS(on)ID- Drain Current (A)VGS= Gate-to-SourceVoltage (V)Qg- Total Gate Charge (nC)VGSID= CharacteristicsCapacitanceOn-Resistance vs. Junction Gate-to-SourceVoltage (V)- Drain Current (A)IDTC= 25 CTC= 125 CTC= - 55 C04080120160200036912 CissVDS- Drain-to-SourceVoltage (V)C - Capacitance (pF) 50- 250255075100125150TJ-Junction Temperature ( C)(Normalized)- On-ResistanceRDS(on)VGS= ; ;ID=1 AVGS= ;ID= Number: 68765S10-0792-Rev.

7 B, 05-Apr-10 Vishay SiliconixSi1965 DHTYPICAL CHARACTERISTICS 25 C, unless otherwise noted Source-Drain Diode Forward VoltageThreshold (V)- Source Current (A) 150 CTJ= 25 50- 250255075100125150ID= 250 A(V)VGS(th)TJ- Temperature ( C)On-Resistance vs. Gate-to-Source VoltageSingle Pulse Power On-Resistance ( )RDS(on)VGS- Gate-to-SourceVoltage (V)TJ=25 CTJ=125 CID=1A0 15)W( rewoPTime (s)341600 10 2 100 Safe Operating Area, Junction-to-AmbientVDS- Drain-to-SourceVoltage (V)*VGS> minimumVGSatwhich RDS(on)is specified- Drain Current (A) 25 CSingle Pulse1ms10 ms100 ,10sDCBVDSS Limited100 LimitedbyRDS(on)*Document Number: 68765S10-0792-Rev.

8 B, SiliconixSi1965 DHTYPICAL CHARACTERISTICS 25 C, unless otherwise noted * The power dissipation PD is based on TJ(max) = 150 C, using junction-to-case thermal resistance, and is more useful in settling the upperdissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the Derating* 255075100125150TC- Case Temperature ( C)ID- Drain Current (A)Package LimitedPower, 255075100125150 T C - Case Temperature ( C) wer Dissipation (W) Number: 68765S10-0792-Rev. B, 05-Apr-10 Vishay SiliconixSi1965 DHTYPICAL CHARACTERISTICS 25 C, unless otherwise noted Vishay Siliconix maintains worldwide manufacturing capability.

9 Products may be manufactured at one of several qualified locations. Reliability data for SiliconTechnology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, andreliability data, see Thermal Transient Impedance, PulseDuty Cycle = Wave Pulse Duration (s)t n e i s n a r T e v i t c e f f E d e z i l a m r o N e c n a d e p m I l a m r e h T 1. Duty Cycle, D = 2. Per Unit Base = R thJA = 220 C/W3. T JM - TA = PDMZthJA(t)t 1 t 2 t 1 t 2 Notes: 4. Surface Mounted P DM Thermal Transient Impedance, Junction-to-Foot10-310-211010-110-42 1 PulseDuty Cycle = Square Wave Pulse Duration (s)t n e i s n a r T e v i t c e f f E d e z i l a m r o N e c n a d e p m I l a m r e h T Document Number: : 18-Jul-081 DisclaimerLegal Disclaimer NoticeVishayAll product specifications and data are subject to change without notice.

10 Vishay Intertechnology , Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf(collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained hereinor in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of anyinformation provided herein to the maximum extent permitted by law. The product specifications do not expand orotherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressedtherein, which apply to these products.