SEPTEMBER 2011 Dual Channel, High-Voltage Multi ...

1 OUTAP0P1P2N2N1N0HV0 AHV2 AHV1 ALV1 ALV2 ALV0 AChannel ACH_AInputLogic,LevelTranslatorP1P2N2N1 INP0 AINP1 AINP2 AINN0 AINN1 AINN2 APCLKINVDD VEEHV0 n LV0nHV1 n LV1nHV2 n LV2nGNDCWGNDVAACWINAVCWnVCWAGNDCWAP0P1P2 N2N1N0HV0 BHV2 BHV1 BLV1 BLV2 BLV0 BCH_BInputLogic,LevelTranslatorP1P2N2N1 VCWBGNDCWBGNDCWBOUTBCWINACWINBC hannel BGNDCWAEN\PDM\ SEPTEMBER2011 REVISEDJANUARY2012 DualChannel, High-Voltage Multi -LevelOutputFullyIntegratedUltrasou ndTransmitterCheckforSamples:TX5171 FEATURESDESCRIPTIONTheTX517isa fullyintegrated,dualchannel,high Upto200 VppinDifferentialModedemandingmedicalUlt rasoundapplicationsthat PeakOutputCurrent: Multi -LevelOutputpeakoutputcurrents,with 200 Vppswings.

2 Differential: 17 LevelsTheTX517isacompletetransmittersolu tionwith SingleEnded: 5 Levelslow-voltageinputlogic,leveltransla tors,gatedrivers Integrated:andP-channelandN-ChannelMOSFE T sforeach LevelTranslatorchannel. DriverTheTX517alsoincorporatesa CWoutputstage. HighVoltageOutputStagesTheTX517isavailab leinaBGApackagethatis CWoutputLead-Free(RoHScompliant) C to85 C. TXOutputUpdateRate Upto100 MSPS17 LevelPulserChip: MinimalExternalComponentsThechipconsists oftwo5-levelchannelstoformasingle17-leve ltransmittercellwhenusedin SmallPackage:BGA13x13mmconjunctionwitha is designedtodrivethetransducernotonlyatvar iousoutputlevels,butAPPLICATIONS alsotomodulatethewidthoftheoutputpulsest o MedicalUltrasoundobtaintheaddedflexibili tyofpulse-width-modulationspectralshapin g.

3 HighVoltageSignalGenerator1 Pleasebeawarethatanimportantnoticeconcer ningavailability,standardwarranty,anduse in 2011 2012, VCWBEN\VAABNCNCINP1B INN1B INP2 BABNCLV1 BLV1 BLV1 BLV1 BLV1 BGNDNCNCGNDVAAC INN2 BBCOUTBLV1 BLV1 BLV1 BLV1 BLV1B CWINBVEEVEEVEEVEEINN0 BCDNCLV1 BLV1 BLV1 BLV1 BLV1B GNDCWB VEEVEEVEEVEEINP0 BDELV2 BLV1 BLV1 BLV1 BLV1 BLV1 BVDDBVEEVEEVEEVEEPCLKINEFLV1 BLV1 BLV1 BLV1 BLV1 BLV1 BLV0 BVEEVEEVEEVEEGNDFGLV1 ALV1 ALV1 ALV1 ALV1 ALV1 ALV0 AVEEVEEVEEVEEVDDGHLV2 ALV1 ALV1 ALV1 ALV1 ALV1 AVDDAVEEVEEVEEVEECWINAHJNCLV1 ALV1 ALV1 ALV1 ALV1A GNDCWA VEEVEEVEEVEEINP0 AJKOUTALV1 ALV1 ALV1

4 ALV1 ALV1 AGNDVEEVEEVEEVEEINN0 AKLNCLV1 ALV1 ALV1 ALV1 ALV1 AGNDNCNCGNDVAAD INN2 ALMHV2 AGNDHV1 AHV0A VCWAPDM\VAAABIASNCINP1A INN1A INP2AM123456789101112TX517 SLOS725A SEPTEMBER2011 (1)PACKAGEDDEVICESPACKAGETYPEPACKAGEMARK INGTRANSPORTMEDIA,QUANTITYECOSTATUS(2)TX 517 IZCQBGA-144TX517 TrayPb-Free,Green(1)NOTE:ThesePackagesco nformtoLead-FreeandGreenManufacturingSpe cifications(2)Eco- :TidefinesGreentomeanLead(Pb)-Freeandin addition,useslesspackagematerialsthatdon otcontainhalogens,includingbromine(Br),o rantimony(Sb) :NotyetavailableLead(Pb)-Free.

5 Forestimatedconversiondates, :TidefinesLead(Pb)-FreetomeanRoHScompati ble,includinga ,and,if designedtobesoldered,suitableforusein 2011 2012,TexasInstrumentsIncorporatedProduct FolderLink(s) SEPTEMBER2011 REVISEDJANUARY2012 PINFUNCTIONSPINNAMEDESCRIPTIONSUPPLIESVA AxInputLogicSupply(+ )VDD+5 VDriverSupplyVEE 5 VDriverSupplyHV0A,HV0 BPositiveSupplyofLow-voltageFETO utputstage;ChannelA andBLV0A,LV0 BNegativeSupplyofLow-voltageFETO utputstage;ChannelA andBHV2A,HV2 BPositiveSupplyofIntermediatevoltageFETO utputstage; andBLV2A,LV2 BNegativeSupplyofIntermediatevoltageFETO utputstage; andBHV1A,HV1 BPositiveSupplyofHigh-voltageFETO utputstage;ChannelA andBLV1A,LV1 BNegativeSupplyofHigh-voltageFETO utputstage;ChannelA andBVCWA,VCWBS upplyconnectionsforCWFET outputstage;ChannelA andBGNDG roundconnection;DriverGNDCWA,GNDCWBG roundconnectionforCWFET outputstageofChannelA andBBIASC onnecttoVAA(+ );usedforinternalbiasing.

6 High-impedanceinputINPUTSINP0A,INP0 BLogicinputsignalfortheLow-voltageP-FETs tageofchannelA andB;Low= ON,High= OFF. ControlsHV0A, ,INN0 BLogicinputsignalfortheLow-voltageN-FETs tageofchannelA andB;Low= OFF,High= ON. ControlsLV0A, ,INP2 BLogicinputsignalfortheIntermediatevolta geP-FETstageofchannelA andB;Low= ON,High= , ,INN2 BLogicinputsignalfortheIntermediateVolta geN-FETstageofchannelA andB;Low= OFF,High= , ,INP1 BLogicinputsignalfortheHigh-voltageP-FET stageofchannelA andB;Low= ON,High= OFF. ControlsHV1A, ,INN1 BLogicinputsignalfortheHigh-voltageN-FET stageofchannelA andB;Low= OFF,High= ON.

7 ControlsLV1A, 1 0 1 0 ; inputdatawillberetimedbytheinternal(T&H) usethismodewhenoperatingtheTX517withouta (1)theinputdatawillbypassthe(T&H).Thispi nis a commoncontrolforChannelA ;Low= power-down,High= a latch(T&H) high,the(T&H)circuitis in low,the(T&H)is in a commonclockinputforbothChannelA 2011 2012,TexasInstrumentsIncorporatedSubmitD ocumentationFeedback3 ProductFolderLink(s):TX517TX517 SLOS725A SEPTEMBER2011 (GND= 0V);overoperatingfree-airtemperature(unl essotherwisenoted)(1)VALUEUNITHigh-Volta ge,PositiveSupplyHV1,2referredtoOUTA/B, +80 VVDSHigh-Voltage,PositiveSupplyHV0referr edtoOUTA/B, +6 VHigh-VoltageVCWA/BsupplyreferredtoGNDCW A/B +16 VHigh-Voltage,NegativeSupplyLV1,2referre dtoOUTA/B, 40to+ ,NegativeSupplyLV0referredtoOUTA/B, 6 to+ :HV1-LV1andHV2.

8 HV0 LV012 VVDDD riverSupply, +6 VVEED riverSupply,negative 6 to+ +6 VLogicInputs(INPx,INNx,EN,PDM,PCLKIN,U) +6 VCWinputs(CWINA,CWINB) +11 VPeakSolderTemperature(2)260 CTJM aximumjunctiontemperature,anycondition(3 )150 CTJM aximumjunctiontemperature,continuousoper ation,longtermreliability(4)125 CTstgStoragetemperaturerange 65to150 CHBM500 VESD ratingsCDM750 VMM200V(1) recommendedoperatingconditions is (2)DevicecomplieswithJSTD-020D.(3)Theabs olutemaximumjunctiontemperatureunderanyc onditionis limitedbytheconstraintsofthesiliconproce ss.

9 (4)Theabsolutemaximumjunctiontemperature forcontinuousoperationis (1)UNITSBGA(144)(ZCQ)PINS JAJunction-to-ambientthermalresistance28 JCtopJunction-to-case(top) C/W 25 (2)(3)WTA= 85 (TJ= 125 C)(1)Formoreinformationabouttraditionala ndnewthermalmetrics,seetheICPackageTherm alMetricsapplicationreport,SPRA953.(2)Th isdatawastakenwiththeJEDECHigh-KtestPCB. (3)Powerratingis determinedwitha junctiontemperatureof125 C 2011 2012,TexasInstrumentsIncorporatedProduct FolderLink(s) SEPTEMBER2011 , ,LV0B 5 ,HV2B03270 VLV2A,LV2B 30 ,HV1B>HV0and>HV26170 VLV1A,LV1B 30 <LV0and<LV2 VVCWA,VCWB01115 VMaximumDELTA betweenHV1toLV1andHV2toLV2100 VINNx,INPx,EN,PDM,PCLKIN,U0 VAAVINCWA,INCWB0510 VINNxx,INPxxinputsamplerate1100 MspsINNxx,INPXX inputunitinterval101000nsPCLKIN inputfrequency1100 MHzAmbientTemperature,TA085 CCopyright 2011 2012,TexasInstrumentsIncorporatedSubmitD ocumentationFeedback5 ProductFolderLink(s):TX517TX517 SLOS725A SEPTEMBER2011.

10 TA= 0 to85 C,VAA= ,VDD= 5V,VEE= 5V,HV0= ,LV0= ,HV2= 32V,LV2= ,HV1= + ,LV1= ,VCW=11V,RL=100 toGNDforOUTA,RL=100 toGNDforOUTB, , (1)HV0/LV0 SIGNALPATH DCPERFORMANCEP-CHANNELE ffectiveresistance,RDSon+ RdiodeHV0= 2 V,OUTX= 750mVto AMaxoutputpowertoMinoutputpower,Effectiv eresistancevariation12%Cload= 100 to0 VOutputsaturationcurrentRL= 5 to 30V ,RDSon+ RdiodeLV0= 2V,OUTX= AMaxoutputpowertoMinoutputpower,Effectiv eResistanceVariation5%CLoad= 100 to0 VOutputsaturationcurrentRL= 5 to+ ACPERFORMANCES ingle-toneoutputfrequency1100 MspsBf =.