AOT(B)(TF)2918L Rohs Rev4 - Alpha & Omega Semiconductor

1 AOT2918L/AOB2918L/AOTF2918L100V N- channel MOSFETG eneral DescriptionProduct SummaryVDS ID (at VGS=10V)90A RDS(ON) (at VGS=10V)< 7m 100% UIS Tested100% Rg TestedSymbolVDSVGSV 20 The AOT2918L & AOB2918L & AOTF2918L uses TrenchMOSFET technology that is uniquely optimized to providethe most efficient high frequency switching losses are minimized due to an extremely lowcombination of RDS(ON) and addition, switching behavior is well controlled with asoft recovery body device is ideal for boostconverters and synchronous rectifiers for consumer,telecom, industrial power supplies and LED Maximum Ratings TA=25 C unless otherwise noted100 VAOT2918L/AOB2918 LAOTF2918 LDrain-Source Voltage100 Gate-Source VoltageG D STO-263D2 PAKGDSGDSDSGTop ViewTO-220 FTO-220 AOTF2918 LAOT2918 LAOB2918 LVGSIDMIAS, IAREAS, EARVDS SpikeIVSPIKETJ.

2 TSTGS ymbolt 10sSteady-StateSteady-StateR JC13903515TC=100 CPower Dissipation BPD13320-55 to 17526741 C/W C/WMaximum Junction-to-Ambient A Junction-to-CaseV 20 Avalanche energy L= CATA=70 CContinuous DrainCurrent61 Pulsed Drain Current CContinuous DrainCurrent GTA=25 CIDSM587045260 AParameterAOT2918L/AOB2918 LAOTF2918 LIDWTC=25 CWTA=70 Dissipation A 10 sV120 Gate-Source VoltageMaximum Junction-to-Ambient A C/WR JA1560TC=25 CTC=100 CmJAvalanche Current C10 AUnitsJunction and Storage Temperature Range CThermal Characteristics : July 2016 1 of 7 AOT2918L/AOB2918L/AOTF2918 LSymbolMinTypMax UnitsBVDSS100 VVDS=100V, VGS=0V1TJ=55 C5 IGSS100 nAVGS(th)Gate Threshold (ON) 3430 pFCoss1530 2035 Qg(10V)3853nCQgs12nCQgd12nCtD(on)1738nst r2453nstD(off)3066nst2453nsElectrical Characteristics (TJ=25 C unless otherwise noted)STATIC PARAMETERSP arameterConditionsDrain-Source Breakdown VoltageID=250 A, VGS=0 VRDS(ON)

3 Static Drain-Source On-ResistanceIDSS AZero Gate Voltage Drain Currentm On state drain currentVGS=10V, VDS=5 VVGS=10V, ID=20 AGate-Body leakage currentVDS=VGS ID=250 AVDS=0V, VGS= 20 VForward TransconductanceTurn-On Rise TimeTurn-Off DelayTimeVGS=10V, VDS=50V, RL= ,RGEN=3 Gate resistanceVGS=0V, VDS=0V, f=1 MHzTurn-Off Fall TimeIS=1A,VGS=0 VVDS=5V, ID=20 ADiode Forward VoltageMaximum Body-Diode Continuous Current GInput CapacitanceOutput CapacitanceVGS=10V, VDS=50V, ID=20 AReverse Transfer CapacitanceVGS=0V, VDS=50V, f=1 MHzTurn-On DelayTimeDYNAMIC PARAMETERST otal Gate ChargeGate Source ChargeGate Drain ChargeSWITCHING PARAMETERStf2453nstrr4665nsQrr230 320nCTHIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET.

4 APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISINGOUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT Fall TimeIF=20A, dI/dt=500A/ sBody Diode Reverse Recovery ChargeBody Diode Reverse Recovery TimeIF=20A, dI/dt=500A/ sA. The value of R JAis measured with the device mounted on 1in2FR-4 board with 2oz. Copper, in a still air environment with TA=25 C. The Power dissipation PDSMis based on R JAand the maximum allowed junction temperature of 150 C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175 C may be used if the PCB allows The power dissipation PDis based on TJ(MAX)=175 C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used.

5 C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175 C. Ratings are based on low frequency and duty cycles to keep initial TJ =25 The R JAis the sum of the thermal impedance from junction to case R JCand case to The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175 C. The SOA curve provides a single pulse rating. G. The maximum current limited by These tests are performed with the device mounted on 1 in2FR-4 board with 2oz.

6 Copper, in a still air environment with TA=25 C. I. The spike duty cycle 5% max, limited by junction temperature TJ(MAX)=120 C. : July 2 of 7 AOT2918L/AOB2918L/AOTF2918 LTYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS1752100180204060801002345 678ID(A)VGS(Volts)Figure 2: Transfer Characteristics (Note E)0246810051015202530 RDS(ON)(m )ID(A)Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 200 Normalized On-ResistanceTemperature ( C)Figure 4: On-Resistance vs. Junction Temperature (Note E)VGS=10 VID=20A25 C125 CVDS=5 VVGS=10V020406080100012345ID(A)VDS(Volts )Fig 1: On-Region Characteristics (Note E)6V7V10 VVGS= + + + (A)VSD(Volts)Figure 6: Body-Diode Characteristics (Note E)25 C125 C(Note E)481216205678910 RDS(ON)(m )VGS(Volts)Figure 5: On-Resistance vs.

7 Gate-Source Voltage (Note E)ID=20A25 C125 C : July 3 of 7 AOT2918L/AOB2918L/AOTF2918 LTYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS17521001802468100510 15 20 25 30 35 40 VGS(Volts)Qg(nC)Figure 7: Gate-Charge Characteristics0100020003000400050000204 06080100 Capacitance (pF)VDS(Volts)Figure 8: Capacitance (W)Pulse Width (s)Figure 10: Single Pulse Power Rating Junction-to-Case CossCrssVDS=50 VID=20 ATJ(Max)=175 CTC=25 C10 (Amps)VDS(Volts)Figure 9: Maximum Forward Biased Safe Operating Area for AOT2918L and AOB2918L (Note F)10 s10ms1msDCRDS(ON) limitedTJ(Max)=175 CTC=25 C100 s40for AOT2918L and AOB2918L (Note F) JCNormalized Transient Thermal ResistancePulse Width (s)Figure 11: Normalized Maximum Transient Thermal Impedance for AOT2918L and AOB2918L (Note F)Single PulseD=Ton/TTJ,PK=TC+ JCTonTPDIn descending orderD= , , , , , , single pulseArea for AOT2918L and AOB2918L (Note F)R JC= C/W : July 4 of 7 AOT2918L/AOB2918L/AOTF2918 LTYPICAL ELECTRICAL AND THERMAL (Amps)VDS(Volts)Figure 9.

8 Maximum Forward Biased Safe Operating Area for AOTF2918L 10 s10ms1msDCTJ(Max)=175 CTC=25 C100 sRDS(ON) (W)Pulse Width (s)Figure 10: Single Pulse Power Rating Junction-to-Case for AOTF2918L (Note F) JCNormalized Transient Thermal ResistancePulse Width (s)Single PulseD=Ton/TTJ,PK=TC+ JCTonTPDIn descending orderD= , , , , , , single pulseTJ(Max)=175 CTC=25 CR JC= C/WPulse Width (s)Figure 11: Normalized Maximum Transient Thermal Impedance for AOTF2918L (Note F) : July 5 of 7 AOT2918L/AOB2918L/AOTF2918 LTYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS1752100180501001502002503 000255075 100 125 150 175 Power Dissipation (W)TCASE( C)Figure 13: Power De-rating (Note F)0204060801000255075 100 125 150 175 Current rating ID(A)TCASE( C)Figure 14: Current De-rating (Note F) (W)Pulse Width (s)Figure 15: Single Pulse Power Rating Junction-to-TA=25 C10100110100 IAR (A) Peak Avalanche Current Time in avalanche, tA( s)Figure 12: Single Pulse Avalanche capability (Note C)TA=25 CTA=150 CTA=100 CTA=125 JANormalized Transient Thermal ResistancePulse Width (s)Figure 16.

9 Normalized Maximum Transient Thermal Impedance (Note H)Single PulseD=Ton/TTJ,PK=TA+ JATonTPDIn descending orderD= , , , , , single pulseFigure 14: Current De-rating (Note F)Figure 15: Single Pulse Power Rating Junction-to-Ambient (Note H)R JA=60 C/W : July 6 of 7 AOT2918L/AOB2918L/AOTF2918L-+VDCIgVdsDUT -+VDCVgsVgs10 VQgQgsQgdChargeGate Charge Test Circuit & Waveform-+VDCDUTVddVgsVdsVgsRLRgVgsVds10 %90%Resistive Switching Test Circuit & Waveformsttrd(on)tontd(off)tftoffId+LVds BVUnclamped Inductive Switching (UIS) Test Circuit & WaveformsVdsDSS2E = 1/2 LIARARVddVgsVgsRgDUT-+VDCVgsIdVgsIIgVgs- +VDCDUTLVgsVdsIsdIsdDiode Recovery Test Circuit & WaveformsVds -Vds +IFARdI/dtIRMrrVddVddQ = - Idttrr : July 7 of 7