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DMG3406L - Diodes Incorporated

DMG3406L Document number: DS37639 Rev. 2 - 2 1 of 6 January 2015 Diodes Incorporated DMG3406L NEW PRODUCT N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS RDS(ON) Max ID Max TA = +25 C 30V 50m @ VGS = 10V 70m @ VGS = Description and Applications This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Battery Charging Power Management Functions DC-DC Converters Portable Power Adaptors Features and Benefits Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free.

DMG3406L Document number: DS37639 Rev. 2 - 2 © Diodes Incorporated 1 of 6 www.diodes.com January 2015 DMG3406L T N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V ...

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Transcription of DMG3406L - Diodes Incorporated

1 DMG3406L Document number: DS37639 Rev. 2 - 2 1 of 6 January 2015 Diodes Incorporated DMG3406L NEW PRODUCT N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS RDS(ON) Max ID Max TA = +25 C 30V 50m @ VGS = 10V 70m @ VGS = Description and Applications This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Battery Charging Power Management Functions DC-DC Converters Portable Power Adaptors Features and Benefits Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free.

2 Green Device (Note 3) Mechanical Data Case: SOT23 Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Terminals Connections: See Diagram Below Weight: grams (Approximate) SOT23 Ordering Information (Note 4) Part Number Case Packaging DMG3406L -7 SOT23 3000/Tape & Reel DMG3406L -13 SOT23 10000/Tape & Reel Notes: 1.

3 No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See for more information about Diodes Incorporated s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at Marking Information Date Code Key Year 2014 2015 2016 2017 2018 2019 2020 Code B C D E F G H Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D Top View Internal Schematic Top View Pin Out DGSN36 = Product Type Marking Code YM = Date Code Marking Y or Y= Year (ex: C = 2015) M = Month (ex: 9 = September) DSGe3 DMG3406L Document number: DS37639 Rev.

4 2 - 2 2 of 6 January 2015 Diodes Incorporated DMG3406L NEW PRODUCT Maximum Ratings (@TA = +25 C, unless otherwise specified.) Characteristic Symbol Value Units Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS 20 V Continuous Drain Current (Note 6) VGS = 10V Steady State TA = +25 C TA = +70 C ID A Pulsed Drain Current (Note 6) (Pulse width 10 S, Duty Cycle 1%) IDM 30 A Maximum Body Diode Forward Current (Note 6) IS A Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 5) PD W Thermal Resistance, Junction to Ambient @TA = +25 C (Note 5) R JA 164 C/W Power Dissipation (Note 6)

5 PD W Thermal Resistance, Junction to Ambient @TA = +25 C (Note 6) R JA 90 C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 C Electrical Characteristics (@TA = +25 C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BVDSS 30 V VGS = 0V, ID = 250 A Zero Gate Voltage Drain Current TJ = +25 C IDSS A VDS = 30V, VGS = 0V Gate-Source Leakage IGSS 100 nA VGS = 20V, VDS = 0V ON CHARACTERISTICS (Note 7) Gate Threshold Voltage VGS(TH) V VDS = VGS, ID = 250 A Static Drain-Source On-Resistance RDS (ON)

6 25 50 m VGS = 10V, ID = 31 70 VGS = , ID = Diode Forward Voltage VSD V VGS = 0V, IS = 1A DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Ciss 495 pF VDS = 15V, VGS = 0V, f = Output Capacitance Coss 50 pF Reverse Transfer Capacitance Crss 43 pF Gate Resistance Rg VDS = 0V, VGS = 0V, f = 1 MHz Total Gate Charge (VGS = ) Qg nC VDS = 15V, ID = Total Gate Charge (VGS = 10V) Qg nC Gate-Source Charge Qgs nC Gate-Drain Charge Qgd nC Turn-On Delay Time tD(ON) ns VDD = 15V, VGS = 10V, RL = , RG = 3 Turn-On Rise Time tR ns Turn-Off Delay Time tD(OFF) ns Turn-Off Fall Time tF ns Notes: 5.

7 Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. DMG3406L Document number: DS37639 Rev. 2 - 2 3 of 6 January 2015 Diodes Incorporated DMG3406L NEW PRODUCT 012345ID, DRAIN CURRENT (A)VDS, DRAIN-SOURCE VOLTAGE (V)Figure 1.

8 Typical Output CharacteristicVGS= , DRAIN CURRENT (A)VGS, GATE-SOURCE VOLTAGE (V)Figure Transfer CharacteristicVDS=5 VTA=-55 CTA=25 CTA=85 CTA=125 CTA=150 (ON), DRAIN-SOURCE ON-RESISTANCE (W)ID, DRAIN-SOURCE CURRENT (A) Figure 3. Typical On-Resistance vs. Drain Current and Gate Voltage VGS=10 VVGS= (ON), DRAIN-SOURCE ON-RESISTANCE (W)VGS, GATE-SOURCE VOLTAGE (V)Figure 4. Typical Transfer Characteristic ID= (ON), DRAIN-SOURCE ON-RESISTANCE (W)ID, DRAIN CURRENT (A)Figure 5. Typical On-Resistance vs. Drain Current and TemperatureVGS= 10V-55 C25 C85 C125 C150 (ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED)TJ, JUNCTION TEMPERATURE ( C)Figure 6.

9 On-Resistance Variation with TemperatureVGS=10V, ID= , ID= DMG3406L Document number: DS37639 Rev. 2 - 2 4 of 6 January 2015 Diodes Incorporated DMG3406L NEW PRODUCT (ON), DRAIN-SOURCE ON-RESISTANCE (W)TJ, JUNCTION TEMPERATURE ( C)Figure 7. On-Resistance Variation with TemperatureVGS=10V, ID= , ID= (TH), GATE THRESHOLD VOLTAGE (V)TJ, JUNCTION TEMPERATURE ( C)Figure 8. Gate Threshold Variation vs Junction TemperatureID=250mAID= , SOURCE CURRENT (A)VSD, SOURCE-DRAIN VOLTAGE (V)Figure 9. Diode Forward Voltage vs.

10 CurrentVGS=0V, TA=-55 CVGS=0V, TA=25 CVGS=0V, TA=85 CVGS=0V, TA=125 CVGS=0V, TA=150 C10 100 1000 051015202530CT, JUNCTION CAPACITANCE(pF)VDS, DRAIN-SOURCE VOLTAGE (V)Figure 10. Typical Junction Capacitancef=1 MHzCissCossCrss0246810024681012 VGS, GATE-SOURCE VOLTAGE (V)Qg,TOTAL GATE CHARGE (nC)Figure 11. Gate ChargeVDS=15V, ID= , DRAIN CURRENT (A)VDS, DRAIN-SOURCE VOLTAGE (V)Figure 12. SOA, Safe Operation AreaTJ(MAX)=150 CTA=25 CSingle PulseDUT on 1*MRP boardVGS=10 VRDS(ON)LimitedDCPW=10sPW=1sPW=100msPW=1 0msPW=1msPW=100ms DMG3406L Document number: DS37639 Rev.


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