G1 G2 S2 - Diodes Incorporated

1 DMC6070 LND Document number: DS38051 Rev. 2 - 2 1 of 12 September 2015 Diodes Incorporated DMC6070 LND ADVANCED INFORMATION NEW PRODUCT C60 YYWWD1S1G1D2S2G2D1G2S2G1S1 Pin 1D2D2D1 COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET POWERDI Product Summary Device V(BR)DSS RDS(ON) max ID max TA = +25 C Q1 60V 85m @ VGS = 10V 120m @ VGS = Q2 -60V 150m @ VGS = -10V 250m @ VGS = Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications Power Management Functions Analog Switch Features Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Complementary Pair MOSFET Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free.

2 Green Device (Note 3) Mechanical Data Case: POWERDI 3333-8 Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish Matte Tin Annealed over Copper Leadframe; Solderable per MIL-STD-202, Method 208 Weight: grams (Approximate) Ordering Information (Note 4) Part Number Case Packaging DMC6070 LND-7 POWERDI3333-8 2,000/Tape & Reel DMC6070 LND-13 POWERDI3333-8 3,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See for more information about Diodes Incorporated s definitions of Halogen- and Antimony-free, "Green" and Lead-free.

3 3. Halogen- and Antimony-free "Green products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at Marking Information Bottom View C6A = Product Type Marking Code YYWW = Date Code Marking YY = Last Two Digits of Year (ex: 15 for 2015) WW = Week Code (01 to 53) Equivalent Circuit N-Channel MOSFET P-Channel MOSFET POWERDI3333-8 C6A Top View POWERDI is a registered trademark of Diodes Incorporated . DMC6070 LND Document number: DS38051 Rev. 2 - 2 2 of 12 September 2015 Diodes Incorporated DMC6070 LND ADVANCED INFORMATION NEW PRODUCT Maximum Ratings Q1 N-CHANNEL (@TA = +25 C, unless otherwise specified.)

4 Characteristic Symbol Value Unit Drain-Source Voltage VDSS 60 V Gate-Source Voltage VGSS 20 V Continuous Drain Current (Note 5) VGS = 10V Steady State TA = +25 C TA = +70 C ID A t<10s TA = +25 C TA = +70 C ID A Maximum Body Diode Forward Current (Note 5) IS 2 A Pulsed Drain Current (10 s Pulse, Duty Cycle = 1%) IDM 15 A Maximum Ratings Q2 P-CHANNEL (@TA = +25 C, unless otherwise specified.) Characteristic Symbol Value Unit Drain-Source Voltage VDSS -60 V Gate-Source Voltage VGSS 20 V Continuous Drain Current (Note 5) VGS = -10V Steady State TA = +25 C TA = +70 C ID A t<10s TA = +25 C TA = +70 C ID A Maximum Body Diode Forward Current (Note 5) IS -2 A Pulsed Drain Current (10 s Pulse, Duty Cycle = 1%) IDM -12 A Thermal Characteristics (@TA = +25 C, unless otherwise specified.)

5 Characteristic Symbol Value Unit Total Power Dissipation (Note 5) PD W Thermal Resistance, Junction to Ambient (Note 5) Steady state R JA 91 C/W t<10s 60 Thermal Resistance, Junction to Case (Note 5) R JC 32 Operating and Storage Temperature Range TJ, TSTG -55 to +150 C Note: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. DMC6070 LND Document number: DS38051 Rev. 2 - 2 3 of 12 September 2015 Diodes Incorporated DMC6070 LND ADVANCED INFORMATION NEW PRODUCT Electrical Characteristics Q1 N-CHANNEL (@TA = +25 C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage BVDSS 60 V VGS = 0V, ID = 250 A Zero Gate Voltage Drain Current TJ = +25 C IDSS 1 A VDS = 60V, VGS = 0V Gate-Source Leakage IGSS 100 nA VGS = 16V, VDS = 0V ON CHARACTERISTICS (Note 6) Gate Threshold Voltage VGS(TH) 1 3 V VDS = VGS, ID = 250 A Static Drain-Source On-Resistance RDS(ON) 60 85 m VGS = 10V, ID = 72 120 VGS = , ID = Forward Transfer Admittance |Yfs| S VDS = 5V, ID = Diode Forward Voltage VSD V VGS = 0V, IS = 3A DYNAMIC CHARACTERISTICS (Note 7)

6 Input Capacitance Ciss 731 pF VDS = 20V, VGS = 0V, f = 1 MHz Output Capacitance Coss 34 pF Reverse Transfer Capacitance Crss 23 pF Gate Resistance Rg VDS = 0V, VGS = 0V, f = 1 MHz Total Gate Charge (VGS = 10V) Qg nC VDS = 30V, ID = 3A Total Gate Charge (VGS = ) Qg nC Gate-Source Charge Qgs nC Gate-Drain Charge Qgd nC Turn-On Delay Time tD(ON) ns VGS = 10V, VDS = 30V, RG = 50 , RL = 20 Turn-On Rise Time tR 11 ns Turn-Off Delay Time tD(OFF) 61 ns Turn-Off Fall Time tF 21 ns Notes: 6. Short duration pulse test used to minimize self-heating effect. 7. Guaranteed by design. Not subject to production testing.

7 DMC6070 LND Document number: DS38051 Rev. 2 - 2 4 of 12 September 2015 Diodes Incorporated DMC6070 LND ADVANCED INFORMATION NEW PRODUCT 0 1 2 3 4 5 ID, DRAIN CURRENT (A) VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. Typical Output Characteristic VGS = VGS = VGS = VGS = VGS = VGS = 0 2 4 6 8 10 RDS(ON), DRAIN-SOURCE ON-RESISTANCE ( ) ID, DRAIN-SOURCE CURRENT (A) Figure 3. Typical On-Resistance vs. Drain Current and Gate Voltage VGS = VGS = 0 0 2 4 6 8 10 RDS(ON), DRAIN-SOURCE ON-RESISTANCE ( ) ID, DRAIN CURRENT(A) Figure 5. Typical On-Resistance vs. Drain Current and Temperature VGS = 150oC 125oC -55oC 25oC 85oC 1 -50 -25 0 25 50 75 100 125 150 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) TJ, JUNCTION TEMPERATURE ( C) Figure 6.

8 On-Resistance Variation with Temperature VGS = , ID = VGS = , ID = 0 0 2 4 6 8 10 12 14 16 18 20 RDS(ON), DRAIN-SOURCE ON-RESISTANCE ( ) VGS, GATE-SOURCE VOLTAGE (V) Figure 4. Typical Transfer Characteristic ID = ID = 0 2 4 6 8 10 0 1 2 3 4 5 ID, DRAIN CURRENT (A) VGS, GATE-SOURCE VOLTAGE (V) Figure 2. Typical Transfer Characteristic VDS = -55oC 25oC 85oC 150oC 125oC DMC6070 LND Document number: DS38051 Rev. 2 - 2 5 of 12 September 2015 Diodes Incorporated DMC6070 LND ADVANCED INFORMATION NEW PRODUCT 1 10 100 1 10 100 ID, DRAIN CURRENT (A) VDS, DRAIN-SOURCE VOLTAGE (V) Figure 12.

9 SOA, Safe Operation Area TJ(Max)=150 C TC=25 C Single Pulse DUT on 1*MRP board VGS=10V RDS(ON) Limited DC PW =10s PW =1s PW =100ms PW =10ms PW =1ms PW =100 s 0 2 4 6 8 10 0 2 4 6 8 10 12 VGS (V) Qg (nC) Figure 11. Gate Charge VDS = 30V, ID = 3A 10 100 1000 10000 0 5 10 15 20 25 30 CT, JUNCTION CAPACITANCE (pF) VDS, DRAIN-SOURCE VOLTAGE (V) Figure 10. Typical Junction Capacitance f=1 MHz Crss Coss Ciss 0 2 4 6 8 10 0 IS, SOURCE CURRENT (A) VSD, SOURCE-DRAIN VOLTAGE (V) Figure 9. Diode Forward Voltage vs. Current TA = 125oC TA = 150oC TA = 85oC TA = 25oC TA = -55oC VGS = 0V 1 2 3 -50 -25 0 25 50 75 100 125 150 VGS(TH), GATE THRESHOLD VOLTAGE (V) TJ, JUNCTION TEMPERATURE ( C) Figure 8.

10 Gate Threshold Variation vs. Junction Temperature ID = 250 A ID = 1mA 0 -50 -25 0 25 50 75 100 125 150 RDS(ON), DRAIN-SOURCE ON-RESISTANCE ( ) TJ, JUNCTION TEMPERATURE ( C) Figure 7. On-Resistance Variation with Temperature VGS = , ID = VGS = , ID = DMC6070 LND Document number: DS38051 Rev. 2 - 2 6 of 12 September 2015 Diodes Incorporated DMC6070 LND ADVANCED INFORMATION NEW PRODUCT 1 1E-05 1 10 100 1000 r(t), TRANSIENT THERMAL RESISTANCE t1, PULSE DURATION TIME (sec) Figure 13. Transient Thermal Resistance R JA(t)=r(t) * R JA R JA=134 C/W Duty Cycle, D=t1 / t2 D=Single Pulse D= D= D= D= D= D= D= D= D= DMC6070 LND Document number: DS38051 Rev.