N-Channel 2.5-V (G-S) MOSFET - Vishay Intertechnology

1 Vishay SiliconixSi2302 ADSD ocument Number: 71831S11-2000-Rev. J, document is subject to change without PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT (G-S) MOSFETFEATURES Halogen-free According to IEC 61249-2-21 Definition 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECNotes:a. Surface mounted on FR4 SPICE model information via the Worldwide Web: SUMMARY VDS (V)RDS(on) ( )ID (A) at VGS = V at VGS = V MAXIMUM RATINGS (TA = 25 C, unless otherwise noted)Parameter Symbol 5 sSteady State Unit Drain-Source Voltage VDS20 VGate-Source Voltage VGS 8 Continuous Drain Current (TJ = 150 C)aTA = 25 = 70 Drain Currenta IDM10 Continuous Source Current (Diode Conduction)

2 DissipationaTA = 25 = 70 Junction and Storage Temperature RangeTJ, Tstg- 55 to 150 CTHERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximum Unit Maximum Junction-to-Ambientat 5 sRthJA115140 C/WSteady State140175G S D To p View 2 3 TO-236 (SOT-23) 1 Si2302 ADS (2A)* * Marking CodeOrdering Information:Si2302 ADS-T1-E3 (Lead (Pb)-free)Si2302 ADS-T1-GE3 (Lead (Pb)-free and Halogen-free) Number: 71831S11-2000-Rev. J, 10-Oct-11 Vishay SiliconixSi2302 ADSThis document is subject to change without PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT :a.

3 Pulse test; PW 300 s, duty cycle 2 %.b. Effective for production 10/04. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operationof the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximumrating conditions for extended periods may affect device (TA = 25 C, unless otherwise noted)Parameter Symbol Test Conditions StaticDrain-Source Breakdown VoltageV(BR)DSSVGS = 0 V, ID = 10 A 20 VGate Threshold VoltageVGS(th) VDS = VGS, ID = 50 A Body LeakageIGSSVDS = 0 V, VGS = 8 V 100nAZero Gate Voltage Drain CurrentIDSSVDS = 20 V, VGS = 0 V AVDS = 20 V, VGS = 0 V, TJ = 55 C Drain CurrentaID(on) VDS 5 V, VGS = V6 AVDS 5 V, VGS = V4 Drain-Source On-ResistanceaRDS(on)

4 VGS = V, ID = A VGS = V, ID = A Transconductanceagfs VDS = 5 V, ID = A 8 SDiode Forward VoltageVSDIS = A, VGS = 0 Gate ChargeQg VDS = 10 V, VGS = V, ID = ChargeQgs ChargeQgd CapacitanceCiss VDS = 10 V, VGS = 0 V, f = 1 MHz300pFOutput CapacitanceCoss 120 Reverse Transfer CapacitanceCrss 80 Gate ResistanceRgf = 1 SwitchingTu r n - O n D e l a y T i m etd(on) VDD = 10 V, RL = ID A, VGEN = V, Rg = 6 715nsRise Timetr5580 Turn-Off DelayTimetd(off) 1660 Fall Timetf1025 Document Number: 71831S11-2000-Rev. J, SiliconixSi2302 ADSThis document is subject to change without PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT CHARACTERISTICS (TA = 25 C, unless otherwise noted)Output CharacteristicsOn-Resistance vs. Drain CurrentGate ChargeVDS - Drain-to-Source Voltage (V))A( tnerruC niarD -ID0 2 4 6 8 10 012345 0 V, V, 1 VVGS = 5 V thru V2 0246810 ID - Drain Current (A)V GS = V V GS = V R)no(SD( ecnatsiseR-nO -)0 1 2 3 4 5 012345 )V( egatloV ecruoS-ot-etaG -Qg - Total Gate Charge (nC)VGSV DS = 10 V I D = A Transfer CharacteristicsCapacitanceOn-Resistance vs.

5 Junction Temperature0 2 4 6 8 10 GS - Gate-to-Source Voltage (V))A( tnerruC niarD -IDT C = 125 C - 55 C 25 C0 100 200 300 400 500 600 048121620 VDS - Drain-to-Source Voltage (V))Fp( ecnaticapaC - CC rss C oss C iss - 50050100150V GS = V I D = A TJ- Junction Temperature ( C)R) n o ( S D e c n a t s i s e R - n O - )dezilamroN( Number: 71831S11-2000-Rev. J, 10-Oct-11 Vishay SiliconixSi2302 ADSThis document is subject to change without PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT CHARACTERISTICS (TA = 25 C, unless otherwise noted) Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for SiliconTechnology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, andreliability data, see Diode Forward VoltageThreshold VSD - Source-to-Drain Voltage (V)) A ( t n e r r u C e c r u o S -IST A = 25 C T A = 150 C - - - - - - 50050100150 TJ - Temperature ( C)) V ( e c n a i r a V VGS(th)ID = 250 AOn-Resistance vs.

6 Gate-to-Source Voltage Single Pulse 02468 V - Gate-to-Source Voltage (V)ID = AR)no(SD( ecnatsiseR-nO -)GS) W ( r e w o P (s)10 8 4 0 2 6 T C = 25 C Single Pulse Normalized Thermal Transient Impedance, Junction-to-AmbientSquare Wave Pulse Duration (s)2 1 10 -4 10 -3 10 -2 10 -1 1 e v i t c e f f E d e z i l a m r o N t n e i s n a r T e c n a d e p m I l a m r e h T 600 Single Pulse Duty Cycle = 10 100 Vishay SiliconixPackage InformationDocument Number: (TO-236): 3-LEADbEE1132 See1DA2AA1 CSeating "CCL1 LqGauge PlaneSeating mmDimMILLIMETERS INCHES Min Max Min Max Refq3 8 3 8 ECN: S-03946-Rev. K, 09-Jul-01 DWG: 5479 Application Note 826 Vishay Siliconix Document Number: : 21-Jan-0825 APPLICATION NOTERECOMMENDED MINIMUM PADS FOR ( )Recommended Minimum PadsDimensions in Inches/(mm) ( ) ( ) ( ) ( ) ( ) ( )Return to IndexReturn to IndexLegal Disclaimer Revision: 01-Jan-20191 Document Number: 91000 Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

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