N-Channel 75-V (D-S) MOSFET

1 vishay SiliconixSi7148 DPDocument Number: 73314S09-0273-Rev. B, 75-V (D-S) MOSFETFEATURES Halogen-free According to IEC 61249-2-21 Available TrenchFET Power MOSFET 100 % Rg TestedAPPLICATIONS Primary Side SwitchPRODUCT SUMMARY VDS (V)RDS(on) ( )ID (A)aQg (Typ.) at VGS = 10 V 2833 at VGS = V 28 Ordering Information: Si7148DP-T1-E3 (Lead (Pb)-free) Si7148DP-T1-GE3 (Lead (Pb)-free and Halogen-free) mmPowerPAK SO-8 Bottom ViewN-Channel MOSFETGDSN otes: a. Based on TC = 25 Surface Mounted on 1" x 1" FR4 t = 10 See Solder Profile ( ). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper(not plated) as a result of the singulation process in manufacturing.

2 A solder fillet at the exposed copper tip cannot be guaranteed and is notrequired to ensure adequate bottom side solder Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise notedParameter Symbol LimitUnit Drain-Source Voltage VDS75 VGate-Source Voltage VGS 20 Continuous Drain Current (TJ = 150 C)

3 TC = 25 CID28 ATC = 70 C22TA = 25 C28b, cTA = 70 C12b, cPulsed Drain CurrentIDM60 Continuous Source-Drain Diode CurrentTC = 25 CIS28TA = 25 , cAvalanche CurrentL = mHIAS45 Single-Pulse Avalanche EnergyEAS100mJMaximum Power DissipationTC = 25 CPD96 WTC = 70 C61TA = 25 , cTA = 70 , cOperating Junction and Storage Temperature Range TJ, Tstg- 55 to 150 CSoldering Recommendations (Peak Temperature)d, Number: 73314S09-0273-Rev. B, 16-Feb-09 vishay SiliconixSi7148 DPNotes: a. Surface Mounted on 1" x 1" FR4 Maximum under Steady State conditions is 65 RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit Maximum Junction-to-Ambienta, bt 10 sRthJA1823 C/WMaximum Junction-to-Case (Drain)

4 Steady TJ = 25 C, unless otherwise notedParameter Symbol Test Conditions Min. StaticDrain-Source Breakdown VoltageVDSVGS = 0 V, ID = 250 A 75 VVDS Temperature Coefficient VDS/TJ ID = 250 A 75mV/ CVGS(th) Temperature Coefficient VGS(th)/TJ - 6 Gate-Source Threshold VoltageVGS(th) VDS = VGS, ID = 250 A = VGS, ID = 5 mA LeakageIGSSVDS = 0 V, VGS = 20 V 100nAZero Gate Voltage Drain CurrentIDSSVDS = 75 v , VGS = 0 V 1 AVDS = 75 v , VGS = 0 V, TJ = 55 C 10On-State Drain CurrentaID(on) VDS 5 V, VGS = 10 V 30 ADrain-Source On-State ResistanceaRDS(on)

5 VGS = 10 V, ID = 15 A VGS = V, ID = A Transconductanceagfs VDS = 15 V, ID = 15 A 60 SDynamicbInput CapacitanceCissVDS = 35 V, VGS = 0 V, f = 1 MHz 2900pFOutput CapacitanceCoss370 Reverse Transfer CapacitanceCrss 196 Total Gate ChargeQgVDS = 38 V, VGS = 10 V, ID = 15 A 68100nCVDS = 38 V, VGS = V, ID = 15 A 3350 Gate-Source ChargeQgs ChargeQgd ResistanceRgf = 1 Tu r n - O n D e l a y T i m etd(on) VDD = 38 V, RL = ID 10 A, VGEN = V, Rg = 1 3350nsRise Timetr255390 Turn-Off Delay Timetd(off) 3555 Fall Timetf100150Tu r n - O n D e l a y T i m etd(on) VDD = 38 V, RL = ID 10 A, VGEN = 10 V, Rg = 1 1726 Rise Timetr4670 Turn-Off Delay Timetd(off) 3960 Fall Timetf1830 Document Number: 73314S09-0273-Rev.

6 B, SiliconixSi7148 DPNotes:a. Pulse test; pulse width 300 s, duty cycle 2 %.b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operationof the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximumrating conditions for extended periods may affect device Body Diode CharacteristicsContinuous Source-Drain Diode CurrentISTC = 25 C 25 APulse Diode Forward CurrentaISM60 Body Diode VoltageVSDIS = Diode Reverse Recovery TimetrrIF = 12 A, dI/dt = 100 A/ s, TJ = 25 C 4165nsBody Diode Reverse Recovery ChargeQrr67105nCReverse Recovery Fall Timeta27nsReverse Recovery Rise Timetb14 SPECIFICATIONS TJ = 25 C, unless otherwise notedParameter Symbol Test Conditions Min.

7 Number: 73314S09-0273-Rev. B, 16-Feb-09 vishay SiliconixSi7148 DPTYPICAL CHARACTERISTICS 25 C, unless otherwise notedOutput CharacteristicsOn-Resistance vs. Drain Current and Gate VoltageGate = 10 V thru 4 V3 VVDS - Drain-to-Source Voltage (V)- Drain Current (A) 102030405060 VGS = 10 VID - Drain Current (A)VGS = VRDS(on) - On-Resistance (m )02468100 10203040506007ID = 15 A- Gate-to-Source Voltage (V)Qg - Total Gate Charge (nC)VGSVDS = 53 VVDS = 38 VTransfer CharacteristicsCapacitanceOn-Resistance vs. Junction CTC = 125 C- 55 CVGS - Gate-to-Source Voltage (V)- Drain Current (A)ID06001200180024003000360042000 1530456075 CrssCossCissVDS - Drain-to-Source Voltage (V)C - Capacitance (pF) 50- 250255075100125150 VGS = 10 VTJ - Junction Temperature ( C)RDS(on) - On-Resistance(Normalized)VGS = VID = 15 ADocument Number: 73314S09-0273-Rev.

8 B, SiliconixSi7148 DPTYPICAL CHARACTERISTICS 25 C, unless otherwise notedSource-Drain Diode Forward VoltageThreshold = 25 CTJ = 150 CVSD - Source-to-Drain Voltage (V)- Source Current (A) 50- 250255075100125150ID = 250 ATJ - Temperature ( C)VGS(th) (V)On-Resistance vs. Gate-to-Source VoltageSingle Pulse Power, = 15 AVGS - Gate-to-Source Voltage (V)RDS(on) - Drain-to-Source On-Resistance ( )TJ = 25 CTJ = 125 C01202004080 Power (W)Time (s) Operating Area, Drain Current (A) msTC = 25 CSingle Pulse10 ms100 msDCLimited byVDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified1 s10 sRDS(on)* Number: 73314S09-0273-Rev. B, 16-Feb-09 vishay SiliconixSi7148 DPTYPICAL CHARACTERISTICS 25 C, unless otherwise noted* The power dissipation PD is based on TJ(max) = 150 C, using junction-to-case thermal resistance, and is more useful in settling the upperdissipation limit for cases where additional heatsinking is used.

9 It is used to determine the current rating, when this rating falls below the Derating*Power, Junction-to-Case015304560750255075100125 150ID - Drain Current (A)TC - Case Temperature ( C)Package Limited0204060801001200255075100125150TC - Case Temperature ( C)Power (W)Single Pulse Avalanche CapabilityPower, - Time In Avalanche (s)IC - Peak Avalanche Current (A)TA=L x IDBV - - Case Temperature ( C)Power (W)Document Number: 73314S09-0273-Rev. B, SiliconixSi7148 DPTYPICAL CHARACTERISTICS 25 C, unless otherwise noted vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for SiliconTecnology and Package Reliability represent a composite of all qualified locations.

10 For related documents such as package/tape drawings, part marking, andreliability data, see Thermal Transient Impedance, PulseDuty Cycle = Wave Pulse Duration (s)Normalized Effective TransientThermal Impedance1. Duty Cycle, D =2. Per Unit Base = RthJA = C/W3. TJM - TA = PDMZthJA(t)t1t2t1t2 Notes:4. Surface MountedPDMN ormalized Thermal Transient Impedance, PulseDuty Cycle = Wave Pulse Duration (s)Normalized Effective TransientThermal ImpedancePackage Siliconix Revison: 13-Feb-171 Document Number: 71655 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT SO-8, (Single/Dual) 0 -12 0 -12 : S17-0173-Rev.