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Gate Protection Diode - Diodes Incorporated

F 3.6A, di/dt = 100A/μs Reverse Recovery Charge =Q RR — 0.5 — nC I F 3.6A, di/dt = 100A/μs Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout. 6. Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by ...

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