Gate Protection Diode - Diodes Incorporated
F 3.6A, di/dt = 100A/μs Reverse Recovery Charge =Q RR — 0.5 — nC I F 3.6A, di/dt = 100A/μs Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout. 6. Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by ...
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Description Pin Assignments ADVANCE ... - Diodes …
www.diodes.comAL5802 Document number: DS35516 Rev. 9 - 2 2 of 11 www.diodes.com March 2014 © Diodes Incorporated ADVANCE INFORMATION NEW PRODUCT AL5802 Pin …
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VF MAX IR MAX Low Forward Voltage Drop VR F @ …
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