Transcription of DMP3098L - Diodes Incorporated
1 DMP3098L Document number: DS31447 Rev. 8 - 2 1 of 5 October 2013 Diodes Incorporated DMP3098 LNEW PRODUCT P-CHANNEL enhancement MODE MOSFET Product Summary V(BR)DSS RDS(on) max ID TA = +25 C -30V 70m @ VGS = -10V 120m @ VGS = Description and Applications This new generation MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Power management functions Analog Switch Load Switch Boost Switch Features and Benefits Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free.
2 Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Mechanical Data Case: SOT23 Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Weight: grams (approximate) Ordering Information (Note 4) Part Number Case Packaging DMP3098L -7 SOT23 3000/Tape & Reel Notes: 1.
3 No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See com for more information about Diodes Incorporated s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at Marking Information Date Code Key Year 2008 2009 2010 2011 2012 2013 2014 2015 Code V W X Y Z A B C Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7
4 8 9 O N D Top View Pin ConfigurationDGSSOT-23 DMB = Product Type Marking Code YM = Date Code Marking for SAT (Shanghai Assembly/ Test site) Y M = Date Code Marking for CAT (Chengdu Assembly/ Test site) Y or Y = Year (ex: A = 2013) M = Month (ex: 9 = September) DMBYMS ourceGateDrainEQUIVALENT CIRCUIT Chengdu A/T Site Shanghai A/T Site DMP3098L Document number: DS31447 Rev. 8 - 2 2 of 5 October 2013 Diodes Incorporated DMP3098 LNEW PRODUCT Maximum Ratings (@TA = +25 C, unless otherwise specified.)
5 Characteristic Symbol Value Units Drain-Source Voltage VDSS -30 V Gate-Source Voltage VGSS 20 V Drain Current (Note 5) VGS = -10V Steady State TA = +25 CTA = +70 CID A Pulsed Drain Current (Note 6) IDM -11 A Thermal Characteristics (@TA = +25 C, unless otherwise specified.)
6 Characteristic Symbol Value Units Total Power Dissipation (Note 5) PD W Thermal Resistance, Junction to Ambient @TA = +25 C (Note 5) R JA 115 C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 C Electrical Characteristics (@TA = +25 C, unless otherwise specified.)
7 Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BVDSS -30 V VGS = 0V, ID = -250 A Zero Gate Voltage Drain Current IDSS -800 nA VDS = -30V, VGS = 0V Gate-Source Leakage IGSS 100 nA VGS = 20V, VDS = 0V ON CHARACTERISTICS (Note 7) Gate Threshold Voltage VGS(th) V VDS = VGS, ID = -250 A Static Drain-Source On-Resistance RDS (ON)
8 56 98 70 120 m VGS = -10V, ID = VGS = , ID = Forward Transfer Admittance |Yfs| S VDS = -5V, ID = Diode Forward Voltage (Note 6) VSD V VGS = 0V, IS = DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Ciss 336 1008 pF VDS = -25V, VGS = 0V, f = Output Capacitance Coss 70 210 pF Reverse Transfer Capacitance Crss 49 147 pF Gate Resistance RG VGS = 0V, VDS = 0V, f = 1 MHz SWITCHING CHARACTERISTICS (Note 8)
9 Total Gate Charge Qg nC VDS = -15V, VGS = , ID = VDS = -15V, VGS = -10V, ID = Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) ns VDS = -15V, VGS = -10V, ID = -1A, RG = Rise Time tr Turn-Off Delay Time td(off) Fall Time tf Notes: 5. Device mounted on FR-4 PCB on 2 oz., copper pads and t 5 sec. 6. Pulse width 10 S, Duty Cycle 1%. 7. Short duration pulse test used to minimize self-heating effect.
10 8. Guaranteed by design. Not subject to production testing. DMP3098L Document number: DS31447 Rev. 8 - 2 3 of 5 October 2013 Diodes Incorporated DMP3098 LNEW PRODUCT -I , DRAIN CURRENT (A)DFig. 1 Typical Output Characteristics-V , DRAIN-SOURCE VOLTAGE (V)DS048121620012345V = = = -10 VGSV = = 2 Typical Transfer Characteristics-V , GATE SOURCE VOLTAGE (V)GS-I , DRAIN CURRENT (A)D04812162012 3 456V = -5 VDST = -55 CAT = 25 CAT = 125 CAT = 150 8121620R, STATIC DRAIN-SOURCE ON-RESISTANCE ( )DS(ON) Fig.
