Power MOSFET - Vishay Intertechnology

1 Document Number: B, 21-Mar-111 This datasheet is subject to change without PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT MOSFETIRFP260, SiHFP260 Vishay SiliconixFEATURES Dynamic dV/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements Compliant to RoHS Directive 2002/95/ECDESCRIPTIONT hird generation Power MOSFETs from Vishay provide thedesigner with the best combination of fast switching,ruggedized device design, low on-resistance TO-247AC package is preferred forcommercial-industrial applications where higher powerlevels preclude the use of TO-220AB devices. TheTO-247AC is similar but superior to the earlier TO-218package because of its isolated mouting hole.

2 It alsoprovides greater creepage distance between pins to meetthe requirements of most safety Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).b. VDD = 50 V, starting TJ = 25 C, L = 708 H, Rg = 25 , IAS = 46 A (see fig. 12).c. ISD 46 A, dI/dt 230 A/ s, VDD VDS, TJ 150 mm from SUMMARYVDS (V)200 RDS(on) ( )VGS = 10 V (Max.) (nC)230 Qgs (nC)42 Qgd (nC)110 ConfigurationSingleN-Channel MOSFET GDSTO-247 ACGDSA vailableRoHS*COMPLIANTORDERING INFORMATIONP ackageTO-247 ACLead (Pb)-freeIRFP260 PbFSiHFP260-E3 SnPbIRFP260 SiHFP260 ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)PARAMETER SYMBOLLIMITUNITD rain-Source Voltage VDS200V Gate-Source VoltageVGS 20 Continuous Drain CurrentVGS at 10 VTC = 25 C ID46 ATC = 100 C 29 Pulsed Drain CurrentaIDM 180 Linear Derating C Single Pulse Avalanche EnergybEAS 1000mJ Repetitive Avalanche CurrentaIAR46 ARepetitive Avalanche EnergyaEAR28mJMaximum Power DissipationTC = 25 C PD280W Peak Diode Recovery dV/dtcdV/dt Operating Junction and Storage Temperature RangeTJ, Tstg- 55 to + 150 C Soldering Recommendations (Peak Temperature)

3 For 10 s300dMounting Torque6-32 or M3 screw10 lbf m* Pb containing terminations are not RoHS compliant, exemptions may apply Number: 912152S11-0487-Rev. B, 21-Mar-11 This datasheet is subject to change without PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT , SiHFP260 Vishay SiliconixNotesa. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).b. Pulse width 300 s; duty cycle 2 %.THERMAL RESISTANCE RATINGSPARAMETER Junction-to-AmbientRthJA-40 C/WCase-to-Sink, Flat, Greased Junction-to-Case (Drain) (TJ = 25 C, unless otherwise noted)PARAMETER SYMBOLTEST CONDITIONS Breakdown Voltage VDS VGS = 0 V, ID = 250 A 200--V VDS Temperature Coefficient VDS/TJ Reference to 25 C, ID = 1 mA C Gate-Source Threshold Voltage VGS(th)VDS = VGS, ID = 250 A Gate-Source Leakage IGSS VGS = 20 V-- 100nA Zero Gate Voltage Drain Current IDSS VDS = 200 V, VGS = 0 V --25 A VDS = 160 V, VGS = 0 V, TJ = 125 C --250 Drain-Source On-State Resistance RDS(on)

4 VGS = 10 VID = 28 Forward Transconductance gfs VDS = 50 V, ID = 28 Ab24--S DynamicInput Capacitance Ciss VGS = 0 V, VDS = 25 V, f = MHz, see fig. 5 -5200-pFOutput Capacitance Coss -1200-Reverse Transfer Capacitance Crss -310-Total Gate Charge Qg VGS = 10 V ID = 46 A, VDS = 160 V, see fig. 6 and 13b--230nC Gate-Source Charge Qgs --42 Gate-Drain ChargeQgd --110 Turn-On Delay Time td(on) VDD = 100 V, ID = 46 A,Rg = , RD = , see fig. 10b-23-nsRise Timetr -120-Turn-Off Delay Time td(off) -100-Fall Time tf -94-Internal Drain Inductance LD Between lead,6 mm ( ") from package and center of die contact Internal Source InductanceLS-13-Drain-Source Body Diode CharacteristicsContinuous Source-Drain Diode Current ISMOSFET symbolshowing the integral reversep - n junction diode--46 APulsed Diode Forward CurrentaISM--180 Body Diode VoltageVSDTJ = 25 C, IS = 46 A, VGS = 0 Diode Reverse Recovery TimetrrTJ = 25 C, IF = 46 A, dI/dt = 100 A/ sb-390590nsBody Diode Reverse Recovery CForward Turn-On TimetonIntrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

5 DSGSDG Document Number: B, 21-Mar-113 This datasheet is subject to change without PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT , SiHFP260 Vishay SiliconixTYPICAL CHARACTERISTICS (25 C, unless otherwise noted)Fig. 1 - Typical Output Characteristics, TC = 25 CFig. 2 - Typical Output Characteristics, TC = 150 CFig. 3 - Typical Transfer CharacteristicsFig. 4 - Normalized On-Resistance vs. Temperature Number: 912154S11-0487-Rev. B, 21-Mar-11 This datasheet is subject to change without PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT , SiHFP260 Vishay SiliconixFig. 5 - Typical Capacitance vs. Drain-to-Source VoltageFig. 6 - Typical Gate Charge vs. Gate-to-Source VoltageFig. 7 - Typical Source-Drain Diode Forward VoltageFig.

6 8 - Maximum Safe Operating Area Document Number: B, 21-Mar-115 This datasheet is subject to change without PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT , SiHFP260 Vishay SiliconixFig. 9 - Maximum Drain Current vs. Case TemperatureFig. 10a - Switching Time Test CircuitFig. 10b - Switching Time WaveformsFig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-CasePulse width 1 sDuty factor % V+-VDSVDDVDS90 %10 %VGStd(on)trtd(off)tf Number: 912156S11-0487-Rev. B, 21-Mar-11 This datasheet is subject to change without PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT , SiHFP260 Vishay SiliconixFig. 12a - Unclamped inductive Test CircuitFig. 12b - Unclamped inductive WaveformsFig. 12c - Maximum Avalanche Energy vs.

7 Drain CurrentFig. 13a - Basic Gate Charge WaveformFig. 13b - Gate Charge Test +-VDD10 VVar y tp to obtainrequired IASIASVDSVDDVDStpQGSQGDQGVGC harge 10 F50 k 12 VCurrent regulatorCurrent sampling resistorsSame type as +- Document Number: B, 21-Mar-117 This datasheet is subject to change without PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT , SiHFP260 Vishay SiliconixFig. 14 - For N-ChannelVishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for SiliconTechnology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, andreliability data, see recoverydV/dtRipple 5 %Body diode forward dropRe-appliedvoltageReverserecoverycurr entBody diode forwardcurrentVGS = 10 Va ISDD river gate lSD VDS waveformInductor currentD = +-+++---Peak Diode Recovery dV/dt Test CircuitVDD dV/dt controlled by Rg Driver same type as ISD controlled by duty factor D - device under layout considerations Low stray inductance Ground plane Low leakage inductancecurrent transformerRgNotea.

8 VGS = 5 V for logic level devicesVDDP ackage Siliconix Revision: 19-Oct-20201 Document Number: 91360 For technical questions, contact: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT (High Voltage)VERSION 1: FACILITY CODE = 9 Notes(1)Package reference: JEDEC TO247, variation AC(2)All dimensions are in mm(3)Slot required, notch may be rounded(4)Dimension D and E do not include mold flash. Mold flash shall not exceed mm per side. These dimensions are measured at the outermost extremes of the plastic body(5)Thermal pad contour optional with dimensions D1 and E1(6)Lead finish uncontrolled in L1(7) P to have a maximum draft angle of to the top of the part with a maximum hole diameter of mm(8)Dimension b2 and b4 does not include dambar protrusion.

9 Allowable dambar protrusion shall be mm total in excess of b2 and b4 dimension at maximum material , Siliconix Revision: 19-Oct-20202 Document Number: 91360 For technical questions, contact: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT 2: FACILITY CODE = YNotes(1)Dimensioning and tolerancing per ASME (2)Contour of slot optional(3)Dimension D and E do not include mold flash. Mold flash shall not exceed mm ( ") per side. These dimensions are measured at the outermost extremes of the plastic body(4)Thermal pad contour optional with dimensions D1 and E1(5)Lead finish uncontrolled in L1(6) P to have a maximum draft angle of to the top of the part with a maximum hole diameter of mm ( ")(7)Outline conforms to JEDEC outline TO-247 with exception of dimension (2)(4) R/2B2 x RSDSee view B2 x e b43 x b2 x b2LC L1123 QDAA2 AAA1C kBDMMA P(Datum B) A - AThermal padD2 DDEECCView B(b1, b3, b5)Base metalc1(b, b2, b4)Section C - C, D - D, E - E(c)Planting4357444 Lead Assignments1.

10 Gate2. Drain3. Source4. DrainPackage Siliconix Revision: 19-Oct-20203 Document Number: 91360 For technical questions, contact: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT 3: FACILITY CODE = NNotes(1)Dimensioning and tolerancing per ASME (2)Contour of slot optional(3)Dimension D and E do not include mold flash. Mold flash shall not exceed mm ( ") per side. These dimensions are measured at the outermost extremes of the plastic body(4)Thermal pad contour optional with dimensions D1 and E1(5)Lead finish uncontrolled in L1(6) P to have a maximum draft angle of to the top of the part with a maximum hole diameter of mm ( ") BSCECN: E20-0545-Rev. F, 19-Oct-2020 DWG: 5971c1cb, b2, b4 PlatingBase metalb1, b3, MDBE1D1 PAP1D2KA2 DAA1Cb2bb4eLCL1 MCAML egal Disclaimer Revision: 09-Jul-20211 Document Number: 91000 Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.