Gan half bridge power stage

LMG5200 80-V, 10-A GaN Half-Bridge Power Stage

SW PGND HS LI GaN Driver VCC AGND HO HB HI LO 8 9 1 VIN HI LI 4 5 HS 3 HB 2 VCC 6 AGND 7 LMG5200 Product Folder Order Now Technical Documents Tools & Software Support & Community

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The VSX3622, a 1.5 kW X-Band GaN Power Amplifier for Radar ...

The design consists of a two stage pre- driver with power split two ways and then amplified. Each sec-ondary driver feeds a 6-way radial power divider and

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GaN FET module performance advantage over silicon

GaN FET module performance advantage over silicon 4 Texas Instruments: March 2015 b) Si7852DP 80v FET SW node Figure 4. Comparison of a GaN FET power stage

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29102 DOC-81227-6 - psemi.com

DOC-81227-6 – (08/2018) Page 7 of 14 www.psemi.com PE29102 High-speed FET Driver Test Diagram Figure 5 shows the test circuit used for obtaining measurements. The two bootstrap diodes shown in the schematic are used for symmetry purposes in characterization.