Example: dental hygienist

N channel 200 v

Found 10 free book(s)
LTC4441/LTC4441-1 - N-Channel MOSFET Gate Driver

LTC4441/LTC4441-1 - N-Channel MOSFET Gate Driver

www.analog.com

LTC4441/LTC4441-1 1 44411fa Typical applicaTion FeaTures DescripTion N-Channel MOSFET Gate Driver The LTC®4441/LTC4441-1 is an N-channel MOSFET gate driver that can supply up to 6A of peak output current.

  Channel

LTC4446 - High Voltage High Side / Low Side N …

LTC4446 - High Voltage High Side / Low Side N

www.analog.com

LTC4446 1 4446f TYPICAL APPLICATION FEATURES APPLICATIONS DESCRIPTION High Voltage High Side/ Low Side N-Channel MOSFET Driver The LTC ®4446 is a high frequency high voltage gate driver that drives two N-channel

  Channel

N-channel 200 V, 0.10 , 18 A DPAK, TO-220, TO …

N-channel 200 V, 0.10 , 18 A DPAK, TO-220, TO …

www.st.com

December 2009 Doc ID 13154 Rev 4 1/15 15 STD20NF20 STF20NF20, STP20NF20 N-channel 200 V, 0.10 Ω, 18 A DPAK, TO-220, TO …

  Channel, N channel 200 v

30V N-Channel MOSFET - Alpha & Omega …

30V N-Channel MOSFET - Alpha & Omega …

aosmd.com

AO3400A 30V N-Channel MOSFET General Description Product Summary VDS I D (at V GS =10V) 5.7A R DS(ON) (at V GS =10V) < 26.5mΩ R DS(ON) (at V GS = 4.5V) < 32mΩ R DS(ON) (at V GS = 2.5V) < 48mΩ Symbol VDS The AO3400A combines advanced trench MOSFET technology with a low resistance package to provide

  Channel, Ao3400a

N-Channel 200-V (D-S) 175 &#176;C MOSFET

N-Channel 200-V (D-S) 175 °C MOSFET

www.vishay.com

Vishay Siliconix SUP57N20-33 Document Number: 72100 S-71662-Rev. B, 06-Aug-07 www.vishay.com 1 N-Channel 200-V (D-S) 175 °C MOSFET FEATURES • TrenchFET® Power MOSFET † 175 °C Junction Temperature

  Vishay, Channel, N channel 200 v

N-Channel 1.8 V (G-S) MOSFET

N-Channel 1.8 V (G-S) MOSFET

www.vishay.com

Vishay Siliconix Si1012R, Si1012X Document Number: 71166 S13-0786-Rev. E, 15-Apr-13 www.vishay.com 3 This document is subject to change without notice.

  Vishay, Channel, Mosfets

100 V N-Channel NexFET Power MOSFET (Rev. B)

100 V N-Channel NexFET Power MOSFET (Rev. B)

www.ti.com

0 2 4 6 8 10 12 14 16 18 20 0 2 4 6 8 10 12 14 16 18 20 V GS ­ Gate­to­ Source Voltage (V) R DS (on) ­ On­State Resistance (m W) T C = 25°C, I D = 17A T C = 125 ...

  Channel, 2 00

SLPS390A –JUNE 2013–REVISED MARCH 2015 …

SLPS390A –JUNE 2013–REVISED MARCH 2015

www.ti.com

PACKAGE OPTION ADDENDUM www.ti.com 30-Apr-2016 30-Apr-2016

  2015, March, March 2015

2N7002L, 2V7002L Small Signal MOSFET - ON …

2N7002L, 2V7002L Small Signal MOSFET - ON …

www.onsemi.com

2n7002l, 2v7002l www.onsemi.com 3 typical electrical characteristics i d, drain current (amps) r ds(on), static drain-source on-resistance (normalized)

  2n7002l

PD - 91309C IRF3710 - Infineon Technologies

PD - 91309C IRF3710 - Infineon Technologies

www.irf.com

www.irf.com 3 Fig 4. Normalized On-Resistance Vs. Temperature Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics …

  Irf3710

Similar queries