V G S Mosfet
Found 8 free book(s)
N-Channel 30-V (D-S) MOSFET
www.vishay.comVishay Siliconix Si7636DP Document Number: 72768 S09-0272-Rev. G, 16-Feb-09 www.vishay.com 1 N-Channel 30-V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Available † Ultra-Low On-Resistance Using High Density
30V P-Channel MOSFET - Alpha and Omega Semiconductor
www.aosmd.comAON7405 30V P-Channel MOSFET General Description Product Summary VDS I D (at V GS = -10V) -50A R DS(ON) (at V GS = -10V) < 6.2mΩ R DS(ON) (at V GS = -6V) < 8.9mΩ 100% UIS Tested 100% R g Tested Symbol VDS The AON7405 uses advanced trench technology to-30V provide excellent R DS(ON) with low gate charge. This device is ideal for load switch and battery protection
N-channel 200 V, 0.10 , 18 A DPAK, TO-220, TO-220FP low ...
www.st.comDecember 2009 Doc ID 13154 Rev 4 1/15 15 STD20NF20 STF20NF20, STP20NF20 N-channel 200 V, 0.10 Ω, 18 A DPAK, TO-220, TO-220FP low gate charge STripFET™ Power MOSFET
MDD3752 MD D P -Channel Trench MOSFET, 40V, 43A, 17m
www.yztdz.com2 November 2008. Version 1.0 3 MagnaChip Semiconductor Ltd.
100 V N-Channel NexFET Power MOSFET (Rev. B)
www.ti.com0 2 4 6 8 10 12 14 16 18 20 0 2 4 6 8 10 12 14 16 18 20 V GS Gateto Source Voltage (V) R DS (on) OnState Resistance (m W) T C = 25°C, I D = 17A T C = 125 ...
CSD18563Q5A 60 V N-Channel NexFET™ Power MOSFET
www.ti.com0 3 6 9 12 15 18 21 24 0 2 4 6 8 10 12 14 16 18 20 V GS Gateto Source Voltage (V) R DS (on) OnState Resistance (m W) T C = 25°C, I D = 18A T C = 125°C ...
P-Channel 2.5 V (G-S) MOSFET - Vishay - manufacturer of ...
www.vishay.comVishay Siliconix Package Information Document Number: 71196 09-Jul-01 www.vishay.com 1 SOT-23 (TO-236): 3-LEAD b 1E 1 3 2 S e e1 D A 2 A1 C Seating Plane 0.10 mm 0.004"
MOSFET Device Physics and Operation
homepages.rpi.edu6 MOSFET DEVICE PHYSICS AND OPERATION Using Gauss’ law, we can relate the total charge Q s per unit area (carrier charge and depletion charge) in the semiconductor to the surface electric field by Q s =−ε sF s.(1.12) At the flat-band condition (V = VFB), …