P Channel 80 V D S MOSFET
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30V P-Channel MOSFET
www.aosmd.comAON7405 30V P-Channel MOSFET General Description Product Summary VDS I D (at V GS = -10V) -50A R DS(ON) (at V GS = -10V) < 6.2mΩ R DS(ON) (at V GS = -6V) < 8.9mΩ 100% UIS Tested 100% R g Tested Symbol VDS The AON7405 uses advanced trench technology to-30V provide excellent R DS(ON) with low gate charge. This device is ideal for load switch and battery protection
BSS84L, BVSS84L Power MOSFET Single P-Channel SOT-23
www.onsemi.comBSS84L, BVSS84L www.onsemi.com 2 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage
100 V N-Channel NexFET Power MOSFET (Rev. B)
www.ti.com0 2 4 6 8 10 12 14 16 18 20 0 2 4 6 8 10 12 14 16 18 20 V GS Gateto Source Voltage (V) R DS (on) OnState Resistance (m W) T C = 25°C, I D = 17A T C = 125 ...
P-Channel 80 V (D-S) MOSFET - Vishay Intertechnology
www.vishay.comVishay Siliconix SUM110P08-11L Document Number: 73471 S12-3071-Rev. C, 24-Dec-12 www.vishay.com 1 This document is subject to change without notice.
MDD3752 MD D P -Channel Trench MOSFET, 40V, 43A, 17m
www.yztdz.com2 November 2008. Version 1.0 3 MagnaChip Semiconductor Ltd.
SLPS449D –OCTOBER 2013–REVISED OCTOBER 2014 …
www.ti.comD G S 0.60 mm 1.00 mm 0.35 mm Product Folder Sample & Buy Technical Documents Tools & Software Support & Community CSD25483F4 SLPS449D –OCTOBER 2013–REVISED OCTOBER 2014