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Using Enhancement Mode GaN-on-Silicon Power FETs …
epc-co.comUsing Enhancement Mode GaN-on-Silicon Power FETs (eGaN® FETs) Efficient Power Conversion Corporation’s (EPC) hyper-fast enhancement mode ... Below are the key characteristics of preferred gate drivers for EPC GaN transistors. For a controller to be functional with eGaN FETs, its driver would also need the following:
GS-065-030-2-L 650 V E-mode GaN transistor Features
gansystems.comThe GS-065-030-2-L is an enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems innovates with industry leading advancements such as patented Island Technology® cell layout which realizes high-current die and high yield. The GS-065-