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Using Enhancement Mode GaN-on-Silicon Power FETs …
Using Enhancement Mode GaN-on-Silicon Power FETs (eGaN® FETs) Efficient Power Conversion Corporation’s (EPC) hyper-fast enhancement mode ... Below are the key characteristics of preferred gate drivers for EPC GaN transistors. For a controller to be functional with eGaN FETs, its driver would also need the following:
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Fundamentals of Gallium Nitride Power Transistors
epc-co.comFurther processing forms a depletion region under the gate. To enhance the transistor, a positive voltage is applied to the gate in the same manner as turning on an n-channel, enhancement mode power MOSFET. A cross section of this structure is depicted in figure 1. This structure is repeated many times to form a power device. The end result
EPC2022 – Enhancement Mode Power Transistor
epc-co.comeGaN® FET DATASHEET EPC2022 EPC – POWER CONVERSION TECHNOLOGY LEADER | EPC-CO.COM | ©2020 | | 1 G EFFICIENT POWER CONVERSION D S HAL EPC2022 – Enhancement Mode Power Transistor
EPC2302 – Enhancement Mode Power Transistor
epc-co.comEPC2302 – Enhancement Mode Power Transistor V DS, 100 V R DS(on), 1.8 mΩ max Features • 100 V • 1.4 mΩ typical, 1.8 mΩ max R DS(on) • 3 x 5 mm QFN package • Exposed top for top-side thermal management • Moisture rating MSL2 • Enhanced Thermal-Max package Applications • AC-DC chargers, SMPS, adaptors, power supplies
EPC2019 – Enhancement Mode Power Transistor
epc-co.comeGaN® FET DATASHEET EPC2019 EPC – POWER CONVERSION TECHNOLOGY LEADER | EPC-CO.COM | ©2022 | | 4 Figure 12: Transient Thermal Response Curves Junction-to-Board t1, Rectangular Pulse Duration, seconds Duty Cycle: Notes: Duty Factor: D = t 1/t 2 Peak T J = P DM x Z θJB x R θJB + T B P DM t 1 t 2 0.5 0.1 0.05 0.02 0.01 Z Single Pulse θJB
EPC2218 – Enhancement Mode Power Transistor
epc-co.comIntended for use with SAC305 Type 3 solder, reference 88.5% metals content. The corner has a radius of R60. Split stencil design can be provided upon request, but EPC has tested this stencil design and not found any scooping issues.
EPC2023 – Enhancement Mode Power Transistor
epc-co.comGallium Nitride’s exceptionally high electron mobility and low temperature coefficient allows very low R DS(on), while its lateral device structure and majority carrier diode provide exceptionally low Q G and zero Q RR. The end result is a device that …
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NCP51820 - High Speed Half-Bridge Driver for GaN Power ...
www.onsemi.comDriver for GaN Power Switches NCP51820 The NCP51820 high−speed, gate driver is designed to meet the stringent requirements of driving enhancement mode (e−mode), high electron mobility transistor (HEMT) and gate injection transistor (GIT), gallium nitrade (GaN) power switches in off−line, half−bridge power topologies.