Search results with tag "Channel enhancement mode field"
BSS138 - N-Channel Logic Level Enhancement Mode Field ...
www.onsemi.cnN-Channel Logic Level Enhancement Mode Field Effect Transistor BSS138 General Description These N−Channel enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. These products have been designed to minimize on−state resistance while provide rugged, reliable, and fast ...
BSS84 - P-Channel Enhancement Mode Field-Effect Transistor
www.onsemi.comP-Channel Enhancement Mode Field-Effect Transistor BSS84 General Description This P−channel enhancement−mode field−effect transistor is produced using onsemi’s proprietary, high cell density, DMOS technology. This very high density process minimizes on−state resistance and to provide rugged and reliable performance and fast switching.
NX2301P 20 V, 2 A P-channel Trench MOSFET - Nexperia
assets.nexperia.comP-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits ... 20 V, 2 A P-channel Trench MOSFET VDS >ID ×RDSon (1) Tamb = 150 °C (2) Tamb =25°C Fig 10. Transfer characteristics: drain current as a
FDV303N - Digital FET, N-Channel
www.onsemi.comDigital FET, N-Channel FDV303N General Description These N−Channel enhancement mode field effect transistors are produced using ON Semiconductor’s proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on−state resistance at low gate drive conditions. This device
AO7800 Dual N-Channel Enhancement Mode Field …
aosmd.comVDC Ig Vds DUT-+ VDC Vgs Vgs 10V Qg Qgs Qgd Charge Gate Charge Test Circuit & Waveform Diode Recovery Test Circuit & Waveforms-+ VDC Vgs …
BSS138DW - Diodes Incorporated
www.diodes.comDUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary BV DSS R DS(ON) Max I D Max T A = +25°C 50V 3.5Ω @ V GS = 10V 200mA capable, and manufactured in IATF Description and Applications This MOSFET has been designed to minimize the on-state resistance (R DS(ON)) yet maintain superior switching performance, making it ideal