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VIII.5. Noise in Transistors a) Noise in Field Effect ...

VIII.5. Noise in Transistors a) Noise in Field Effect ...

www-physics.lbl.gov

Since they are majority carrier devices, MOSFETs are insensitive to displacement damage, but they are affected by ionization damage, which leads to charge buildup in the oxide and the formation of interface states. See H. Spieler, Introduction to Radiation-Resistant Semiconductor Devices

  Devices, Introduction, Radiation, Semiconductors, Resistant, Introduction to radiation, Resistant semiconductor devices

Introduction to Radiation - Canadian Nuclear Safety …

Introduction to Radiation - Canadian Nuclear Safety …

nuclearsafety.gc.ca

The time it takes for a radioisotope to decay to half of its starting activity is called the radiological half-life, which is denoted by the symbol t. ½. Each radioisotope has a unique half-life, and it can range from a fraction of a second to billions of years. For example, iodine-131 has an eight-day half-life, whereas plutonium-239 has a ...

  Introduction, Activity, Life, Radiation, Half, Decay, Introduction to radiation

Introduction to Radiation

Introduction to Radiation

nuclearsafety.gc.ca

Types and Sources of Radiation . Radiation is energy in the form of waves of particles. There are two forms of radiation – non-ionizing and ionizing – which will be discussed in sections 3.1 and 3.2, respectively. 3.1 Non-ionizing radiation . Non-ionizing radiation has less energy than ionizing radiation; it does not possess enough energy ...

  Introduction, Course, Radiation, Introduction to radiation

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