Transcription of 2017 第4回 半導体技術の概要と動向
1 1) 2) MPU DRAM NAND 3) ITRS ITRS 3D FinFET NAND 3D 3 3 PoP ,TSV 4 H29 II 339 2017 1 MOS (FET) MOS P MOS N MOS N MOS P N N P MOS N MOS N (P)P (B) 2 N N P 1-2nm (SiO2) CMOS MOS: Metal Oxide SemiconductorCMOS: Complementary MOS VDD H VDD)
2 3 CMOS GNDCLCLHHLLDRAM DRAM MOS 1 1 MOS 4G DRAM 40 1 MOS MOS 425fFDynamic Random Access Memory SiO2 3,000 20nm 5 1965 18 24 (1 1965 LSI 1000100 10 DRAM Intel LSI) Gordon E.
3 Moore :Intel 6 1000 2 2 1971 2,300 2017 iPhone8 A11 43 (10nmFinFET 2017 (xBoxone x) 70 (16nmFinFET 7 GPU(NVIDIA) 210 GPU: 100806040200 (%)8 Gbit4 Gbit2 Gbit1 Gbit512 MbitDRAM 2013 Intel IDF DRAM 2 2 2016 4 Gbit 8 Gbit DRAM 16 Gbit 89 DRAM 16nm DRAM Samsung DRAM : 18nm1Y: 15nm10 ISSCC NAND 768Gb VLSI 96 201032 GbMLC32nm 201164 GbMLC24nm 201264 GbMLC19nm 2013128 GbTLC20nm 2014128 GbMLC16nm 2015128 GbTLC32 3D NAND2016256 GbTLC48 3D NAND2017512 GbTLC64 3D NAND2017/6768 GbQLC64 3D NAND2017/6256 GbTLC96 3D NANDNAND 64 512Gb3D NAND ISSCC2017 2016 128 Gbit(MLC)14nm 3 3D NAND 32 128Gb(TLC) 2 2017 ISSCC 64 512 Gbit 2017 6 2017 6 QLC(4bit/cell) 768 Gbit/chip 768 Gbit/chip 16 ( )/ SLC:1bit/cellMLC:2bit/cellTLC:3bit/cellQ LC.))
4 4bit/cell 2003 2009 3 3 2 32nm 2016 15nm (NAND)11 LSI(MPU SoC ITRS 12 ITRS ITRSI nternational Technology Roadmap for Semiconductors ITRS 15 2016 2 ITRS 15 System 2015 Edition IoT ITRS 2016 2 13 Memory 2015 EditionITRSITRS 2015 Edition Executive Report NAND HP=14nm 3D NANDDRAM HP=20nm 14 Logic 2015 2015 Edition Executive Report 2016 Logic 14/16nm FinFET ITRS HP( =28nm2017 10nmFinFET ITRS))
5 HP=18nmITRS ITRS ITRS Research, Development, Production Production( 1 2 2 / 5 12 2 / 2 2 / 4 Intel ITRSITRS2013 Executive Summary 9~12 tool ITRS PIDS/FEP 8 15 ITRS DRAM MPU/ASIC Executive SummaryDRAMDRAM MPU/ASIC 1/2 Pitch M1) 1/2 ITRSMPU/ASICLeff FET L 20nm Intel 14nmITRS 26nm1617 ITRS M1(Metal 1) M10(Metal 10) M1 ITRS M1 1/2(HP) Source18 GLOBALFOUNDIES GF Intel Samsung TSMC CPP Contacted Poly Pitch MMP Minimum Metal Pitch Industry Strategy Symposium ISS 2017 1 8 11 ITRS ITRS Intel 10nm ITRS 20nm Intel 10nm (Samsung,TSMC,GF) 7nm Intel 7nm 5nm ITRS NAND Executive SummaryNAND 1/2 Pitch hp ) 1/2 NAND poly-si ITRS 15nm19 nmITRS ( CAGR(2 yrs) =.
6 7x/2yrs ITRS 1 2 ITRS NAND MPU SOC)LSI 22nm,16nm,14nm ITRS 3D FinFET M1 20 R. Dennard (1974 S 1/S 1/S L) Device/Circuit parameterScaling FactorDevice dimensions L, W, Tox1/SDoping concentrationS Delay1/SPower dissipation/device1/S3 1/S2tox L W Scaling2 S LSI 1/S 1/S 21 100 nm 30nm LSI 1 LSI 20nm 1nm100nm10nm1um10um100um1mm10mm100mm1m1 10m 22 MOS FET SiO2 130nm MOS FET L CoSiO2 MPU SOC 23 MOS FET 90nm ITRS2009 Executive Summary ON/OFF 3
7 Intel 2007 Intel 2009 Intel 2003 High-k/ SOI SOIFinFET Tri-Gate Intel 2011 90nm 90nm 45nm High-k/ 22nm 3D (MuGFET) 24 Intel Intel High-k MG 3 DTri-Gate(FinFET) 3 2014 TSMC Samsung Intel 25 Intel 4 (32nm)SiGe Ge Ge Si Si , Si NMOS PMOS SiN 2 NMOS PMOS PMOS MOS IEDM2009 PMOSSiGe SiGe GateMetal 26 60 70 80 902000 consumption(W)Dynamic currentLeak current CPU f CL Vdd Ileak ddleakddLdVIVfCP 2 CLCMOS Dynamic current27 Ioff Ioff 28 HKMG(High-k/Metal Gate)
8 SiO2( Si3N4( HfSiO( HfO( High-k (1nm) High-K SiO2 2 High-k SiO2 MG(Metal Gate): MOS 29 Ioff (NMOS SOI Silicon on Insulator) SOI BOX) Si FD SOI ( SOI)SiO290nm SOI IBM AMD STM Intel SOI 303D Tri-Gate/FinFET FET Tri-Gate FinFETT rigate/FinFET SiO2 3D Tri-Gate/Fin FET 3 3 GateDrainSourceSiO2 FinFET 2 FET S-D ON/OFF Trigate/FinFET 3 31 Intel 22nmFinFET 2 14 FinFET14nm FinFET60nm Fin 42nm Fin 42nmFin 34nm Fin Si Si SEM FinFET2013 2011 Fin Gate 90nm 80nmGate 70nm 52nm32 2 Fin 33 # FinFET Fin 34nmFin 60nmFin 8nmFin 42nmFin 42mFin 53nmFin 34nm 2 (2013 1 2011 3 (2017 GateDrainSourceSiO2 FinFET Intel IEDM2006 22nmTri-Gate 2011 22nm 1)))))
9 2013 14nm 2 2017 10nm 3 Intel 10nm 34nm 53nm 36nm 54nmIntel10nm FinFET 7nm FinFET vs Intel22nm/14nm 3D FinFET FinFET Intel 2014 2 FinFET 22nm 14nm FinFET /W IntelServerMobileServerMobile34 NAND NAND NAND 16nm 3D 2014 9 NAND 15nm 3D 2009 2011 2012 NAND 3D 3 4 20nm20nm21nm25nm24nm20nm19nm18nm16nm18nm 16nm15nm1(Y)nmIntel+Micron35 WinPC 2013 11 NAND2013 NAND 2014 10nm NAND 2015 3D 256 GbitNAND 2014 3D NAND 2013 Samsung32 128 Gbit 2017 NAND 50% 3D NAND (64 256 Gbit) 2016 6 2016 363 DNAND 2007 BiCS2007 3 NAND BiCSBiCS Bit Cost Scalable3 DNAND 3D NAND BiCS BiCS RIE ( )( )
10 NAND BiCS 3 DNAND 38 Vertical Channel 3D NAND Flash Memory Summit 2012 SK Hynix 3 NAND 2007 BiCS Samsung,Hynix,Micron BiCS Samsung 2009 BiCS TCAT 2013 8 V-NAND V-NAND 2013 3 DNAND3940 Samsung3D NAND BiCS 512 Gbit 64 ISSCC2017 & 3D NAND BiCS 512 Gbit 64 Samsung 3D NAND ISSCC20173 DNAND64 512 Gbit(TLC)413 DNAND3D NAND NAND AI 2017 NAND3 Samsung, /WD Micron-Intel) 64 256G 512 Gbit(TLC) 64 768 Gbit(QLC) ( ) 96 512 Gbit(TLC) Intel+Micro 128 Gbit 3D X,Y 20nm 128G 640 2 ReRAM NAND 1000 DRAM 8 10 NAND 1000 128 Gbit 3D XPoint 3 DXPoint42 Intel+Micron 3 DXPoint 3 (3D) STRJ/ITRSTSVPoP 3 PoP WL.
