Transcription of 扬州扬杰电子科技股份有限公司 - 21yangjie.com
1 2021 1 2021 2021-047 2021 08 2021 2 ( ) 1 2 MOSFET IGBT 2021 3 3 4
2 2021 4 .. 2 .. 9 .. 12 .. 50 .. 52 .. 60 .. 66 .. 74 .. 75 .. 76 2021 5 2021 6 MOSFET MOS - Metal-Oxide-Semiconductor-Field-Effect Transistor , IGBT Insulated Gate Bipolar Transistor BJT MOS DFN/QFN DFN/QFN SiC GaN direct bandgap SBD schottky Barrier Diode - JBS Junction Barrier schottky JBS PiN SBD IDM Integrated Design and Manufacture
3 2021 7 MRP Material Requirement Planning SAP System Applications and Products SAP ERP SCM Supply Chain Management GPP Glass Passivation Pellet PN BJT Bipolar Junction Transistor PN FRED Fast Recovery Diode PWM ESD Electro-Static discharge SGT MOS Split Gate trench MOSFET TVS MCC Micro Commercial Components GmbH MCC Micro Commercial Components Corporation USA CS Caswell Caswell Industries Limited BVI 2021 8 Yangjie Electronic Korea Co.
4 , Ltd. 2021 1 1 2021 6 30 2021 9 300373 Yangzhou Yangjie Electronic Technology Co.,Ltd. Yangjie Technology 6 6 0514-87755155 0514-87755155 0514-87943666 0514-87943666 1 2020 2 2020 2021 10 3 2020 03 31 913210007908906337 - - 2021 05 19 913210007908906337 - - 2021 05 21 ( 2021-033 2,079,616.)
5 1,136,848, 344,170, 144,261, 332,751, 143,987, 211,467, 298,076, / / 6,446,388, 4,086,812, 4,646,377, 2,904,021, 1 2021 11 2 -1,372, 10,774, 5,523, 4,589, -5,164, 2,555, 375, 11,419.
6 -- 1 1 1 2021 12 1 MOSFET IGBT JBS 11 10 " " "MCC" 2 5G 3 2021 13 " " 4 IDM Fabless 1 IATF16949
7 21 2 MES EAP RMS 2021 14 AGV 5G 3 MCC MCC YJ YJ 1 1 SiC IGBT MOSFET WB Clip 8
8 5000m2 BJT MOSFET IGBT 2 2021 15 985 211 3 IPD 4 20 3 2 1 2021 GDP 6% GDP 8% 5G 2 5G 2021 16 MCC DESIGN IN 3 CRM LTC
9 3 1 7 IT 2 30% 2,079,616, 1,136,848, 2021 2021 2021 17 1,371,246, 751,814, 71,960, 62,703, 92,795, 75,371, 9,626, -2,301, 53,479, 25,297, 112,696, 55,792, 211,467, 298,076, 8 -1,251,580, -317,427, 1,606,109, 38,374, 4, 560,142, 21,436, 2, 10% 2021 18 1,574,042, 1,042,055, 335,338, 229,200, 149,782, 95,865, 2,059,164, 1,367,121.
