SiC power modules for your electric ... - STMicroelectronics

1 SiCpower modules for your electric vehicle designSTMicroelectronicsSTPOWER Silicon Carbide (SiC) MOSFET offers for electric vehiclesWhy stronger demand for e-vehicles boosts the need for Silicon Carbide (SiC)Silicon Carbide in vehicle applicationsSTPOWER Silicon Carbide The enabling technology for automotive applicationsWhy stronger demand for electric vehicles boosts the need for SiCReplacing silicon based IGBTs and Diodes by SiCsolutions will result in Higher efficiency and extended vehicle rangeSmaller form cost and weightLess cooling effort and faster recharging015304520192020202120222023202 42025 Total xEV* [Mu]Electrification Market OutlookElectrification Boosted by power Silicon & New Materials will Accelerate Growth of a Flattish Light Vehicles Market xEVsource: SA, IHS, ST InternalSiCsource: IHS, Feb 20, ST internal*including Mild Hybrid, Full Hybrid, Plug-in Hybrid, Battery electric VehicleContinuous and Consistent Growth of Electrified Light Vehicles -xEVsSilicon Carbide allows Battery electric Vehicles to go Beyond the Limits of SiliconReplacing Silicon based IGBTs and Diodes in the Traction Inverterand On-Board Chargerby SiCMOSFETs resulting in: Higher efficiency Smaller form cost & weight Less cooling effort Faster recharging Extended vehicle range20202025 Today >40% BEVsare using SiC Total Electrified Vehicle CAGR 19- 25 >28% By 2025 Battery electric Vehicles will be >25% of Total Electrified Vehiclesx5 Silicon Carbide Market OutlookSource: IHS SiC& GaNPower Semiconductor Report (May 2019), mid case.

2 (SAM by segments including: SiCMOSFET + SiCDiodes + Hybrid modules + full SiCmodules)*Military and aerospace, traction, Other applications**renewable energies applications includedSiCpower semiconductors by macro product family20192028 ModulesMOSFETsDiodes[$ m]CAGR(19-28) and MilitaryPV invertersIndustrial Motor DrivesEV charging stationsCommercial vehiclesHEV/EVUPSP ower suppliesx (19-28): (19-28) [$ m]52%12%13%AutomotiveIndustrial**Others* CAGR Y 18- 25 Silicon Carbide Continuous GrowthSiCpower semiconductors by applicationSilicon Carbide in electric vehicle applicationsOne key technology based on Wide Band Gap (WBG) semiconductors for multiple applicationsTraction Inverter: Converts DC Voltage into 3-phase AC at up to 200kW for the electric motor DC-DC Charger: Converts High Voltage DC from High Voltage batteriesOn-Board Charger (OBC): Converts AC from the Grid 95 265 Vacto a DC voltage required for battery charging 400 800 VWide Band GapTechnology MappingTechnologyFeatures Preferred for (some example)Si HV MOSFET Medium-high power , high voltage, up to several kW, high frequencySMPS, server and telecom, DC/DC, low power motor control, OBC, charging station.

3 IGBT Very high power , high voltage, medium frequency up to 50 kHzHV motor control, , UPS, welding, induction heating, main traction, ..SiCMOSFET Very high power , high voltage, high frequency, high temperature ratings High power DC/DC, UPS, charging station, main traction inverters, OBC, ..GaNTransistorVery high frequency > 80 kHz, medium-high power up to several kWSMPS, Telecom power , DC/DC, OBC, PV inverters, LiDAR, .. 10 W100 W1 kW10 kW100 kW1 MW1 W1 Hz10 Hz100 Hz1 kHz10 kHz100 kHz1 MHz10 MHzHigher power can be reached with a modular approach or paralleling more devicesOperating frequencySystem power levelIGBT Si MOSFETSiCMOSFET GaNTransistorElectric vehicles applications SiCMOSFETs, results in higher efficiency, smaller form factor, less complexity in cooling Vs. Si approach High power DC-DC converter for fast and reliable DC Charging reduces the charging time of HEVs and EVs TractionInverterHV DC-DC 400V+-Input BridgePFC StageFull Bridge 400 800 VMDC +DC -SiCtechnology for traction inverterTo enhance traction inverter efficiency MDC +DC -Traction Inverter Stage High power inverter stage to drive the vehicle traction motor.

4 Replacing silicon based IGBTs and diodes in the inverter stage by SiC MOSFETs, results in higher efficiency, smaller form factor, less cooling requirements, .. Comprehensive ST portfolio of STPOWER SiCMOSFETs as bare die, package or module solution in 650 V as well as 1200 V for HV DC-DC converter To minimize conduction and switching losses High voltage DC-DC converter to boost battery voltage up,enabling operation of the traction motor within optimized voltage range. High voltage DC-DC converter for fast and reliable DC Charging in dual voltage domainsreducing significantly the charging time of HEVs and EVs. STPOWERSiCMOSFET solutions from ST operate at higher switching frequencyand at higher temperatureenabling minimized magnetic losses a smaller, lighter cooling system the highest power 400 VHV DC/DC 800 VSiCtechnology for on-board chargerTo speed-up systems charging 400V+-ACPhase-to-phase supply voltageBattery charger+400-800 VDCT hree level Vienna bridge PFCHV MOSFETs/ IGBTsHV diodeMOS/IGBTGate driverSignal conditioningSchottkydiodeHV MOSFET/IGBT2x Phase shift full bridgeControl unit Signal conditioningLoad+MOS/IGBTGate driverHV diodeSmart controllerLine inputEMI stuffPhase InductorsL1L2L3 Aux SMPS-Only 600V active switches required-As no significant common GND point the best fit for galvanic isolated control approach400 VACI nput BridgePFC StageFull Bridge LLCOn-Board Charger Charging the battery of plug-in HEVs and EVs from the single-phase or 3-phase power grid.

5 Different architectures and topologies in automotive are required to support scalable solutions. ST solutions enablecompact and efficient designs STPOWER SiCMOSFETs & SiC Diodes STPOWER SJ MOSFETs, IGBTs, fast Diodes & SCRs STPOWER Silicon CarbideThe enabling technology for automotive applicationST best-in-class SiCTechnologyST offers a broad range of SiCsolutions: Discrete, Bare Dice, ModuleST continue capacity expansion to support market accelerationST invests on advanced package technologies with HiP247-4 leads, HU3 PAK , STPAK , ACEPACK SMITSTPOWER SiCMOSFET families OverviewThe best high voltage and high frequency switch for high density applications The best option for RONvs. Tjbehavior: highly suitable for motor drive applicationsThe best RONvs. Qgtrade-off : highly suitable for a broad range of automotive and industrial applicationsAn ultra-fast series with the best RONvs. Qgtrade off: highly suitable for very high frequency applicationsGen1 1200V-1700 VGen2650V, 1200 VGen3650V, 750V, 900V, 1200 VSiCMOSFET: the true R-evolution for high voltage power switchesSTPOWER Silicon Carbidethe enabling technology for automotive applicationsMain applicationsSilicon Carbide product portfolioAG 650V SiCMOSFETs: Gen 2 High Voltage Product Familyin production SCTx35N65xx SCTx100N65xxAG 1200V SiCMOSFETs.

6 Gen 2 Very High Voltage High Product Family in Production SCTx40N120xx SCTx70N120xx SCTx100N120xx Smaller form factor with high power density Higher system efficiencyat high frequency Reduced size/cost of passive components Low power losses at high temperatures Compact design and cost-effective system approach Simpler topologiesKey benefitsPower DC-DC ConverterOBCT raction InverterHiP247 HiP247 long leads H2 PAK-7 H2 PAK-7 HiP247 HiP247 long leads STPOWER ACEPACK*moduleAdaptable Compact Easier PACKage 100% controlled by ST for SiC, MOSFETs, IGBTs and Diodes Compact design and cost-effective system approach for a plug & play system solution Configuration flexibility 2500 VRMS electrical isolationSMIT (**) 2500 VRMS electrical isolation SMD assembly Total footprint x mm Top side cooling Low thermal resistance Optimized for 200kW inverters SiC MOSFET based switch Improved light load power losses for extended EV driving ranges Extreme low conduction losses Short circuit ruggedness Direct cooled Cu base plate with pin fins CIB Six-pack Three level Boost interleaved.

7 Bridge rectifier Half-bridge Single-boost .. Six-packConfigurationsKey featuresTarget ApplicationsA1 -A2 (*)OptionDRIVE (**)On Board ChargerTraction Inverter(*) available (**) Engineering Samples availableDC-DC Converter* Is a registered and/or unregistered trademark of STMicroelectronics International NV or its affiliates in the EU and/or elsewhere STPOWER SiCMOSFET product portfolio by application650 V1200 V1700 VGen2 Gen1 Gen2 Gen1 Breakdown Voltage SeriesOn-state resistance Focus Applications18 mOhmto 55 mOhm52 mOhmto 520 mOhm25 mOhmto 75 mOhm1 Ohm and 65 mOhmOBC & DC-DCRenewable energyPower SupplyIndustrial drivesDC-DC power SupplyRenewable energyOBC & DC-DCInverterStreet LightingCharging stationsIndustrial drivesPhotovoltaicHVACP ower supply750 VGen3 Gen311 mOhm70 mOhmand 15 mOhmInverterDC-DCPower SupplyDC-DCRenewable energyGen355 mOhmOBC & DC-DCPower SupplySolarInvestingin new facilities to sustain power Silicon growth30+ years experience with STPOWERand Discrete The success factor of fast growing EV marketST commitment300mmAgrate FabIGBTHV Si MOSFET.

8 MDmeshPowerFLAT8x8 DSCTO-LLHU3 PAKC ontinue innovationon power PackageACEPACKSMITSTPAK seriesGaNHEMT650 V and 100 V normally off solutions to boost efficiency and power density thanks to fast switching operationOBC 48V DC-DC2 SPAKP owerFLAT8x8 HVACEPACKDRIVEACEPACK1, 2 TractionNarrow MESA OBC and DC-DC MVElectric heater and airconseriesHigh power IGBT trench Field-stopPTC Heater, OBC, aircon HBHigher EfficiencyDMKH igher Voltage RangeMMore power DensityOBCand DC-DCconverterSuper-Junction MultiDrain STMicroelectronics -All rights logo is a trademark or a registered trademark of STMicroelectronics International NV or its affiliates in the EU and/or othercountries. For additional information about ST trademarks, please refer to All other product or service names are the property of their respective you