2N3904 MMBT3904 - mit.edu

1 2N3904 / MMBT3904 / PZT39042N3904 MMBT3904 PZT3904 NPN General Purpose AmplifierThis device is designed as a general purpose amplifier and useful dynamic range extends to 100 mA as a switch and to100 MHz as an amplifier. Sourced from Process Maximum Ratings* TA = 25 C unless otherwise noted*These ratings are limiting values above which the serviceability of any semiconductor device may be :1) These ratings are based on a maximum junction temperature of 150 degrees ) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle Voltage40 VVCBOC ollector-Base Voltage60 VVEBOE mitter-Base Current - Continuous200mATJ, TstgOperating and Storage Junction Temperature Range-55 to +150 CCBETO-92 BCCSOT-223 ECBESOT-23 Mark.

2 1A 1997 Fairchild Semiconductor Corporation2N3904 / MMBT3904 / PZT3904 NPN General Purpose Amplifier(continued)Electrical Characteristics TA = 25 C unless otherwise notedSymbolParameterTest ConditionsMinMaxUnitsV(BR)CEOC ollector-Emitter Breakdown VoltageIC = mA, IB = 040VV(BR)CBOC ollector-Base Breakdown VoltageIC = 10 A, IE = 060VV(BR)EBOE mitter-Base Breakdown VoltageIE = 10 A, IC = Cutoff CurrentVCE = 30 V, VEB = 050nAICEXC ollector Cutoff CurrentVCE = 30 V, VEB = 050nAOFF CHARACTERISTICSON CHARACTERISTICS*SMALL SIGNAL CHARACTERISTICSSWITCHING CHARACTERISTICS (except MMPQ3904)*Pulse Test: Pulse Width 300 s, Duty Cycle (Is= Xti=3 Eg= Vaf= Bf= Ne= Ise= Ikf= Xtb= Br=.)

3 7371 Nc=2 Isc=0 Ikr=0 Rc=1 Cjc= Mjc=.3085 Vjc=.75 Fc=.5 Cje= Mje=.2593 Vje=.75 Tr= Tf= Vtf=4 Xtf=2 Rb=10)Spice ModelfTCurrent Gain - Bandwidth ProductIC = 10 mA, VCE = 20 V,f = 100 MHz300 MHzCoboOutput CapacitanceVCB = V, IE = 0,f = CapacitanceVEB = V, IC = 0,f = Figure (except MMPQ3904)IC = 100 A, VCE = V,RS = , f=10 Hz to TimeVCC = V, VBE = V,35nstrRise TimeIC = 10 mA, IB1 = mA35nstsStorage TimeVCC = V, IC = 10mA200nstfFall TimeIB1 = IB2 = mA50nshFEDC Current GainIC = mA, VCE = VIC = mA, VCE = VIC = 10 mA, VCE = VIC = 50 mA, VCE = VIC = 100 mA, VCE = V40701006030300 VCE(sat)Collector-Emitter Saturation VoltageIC = 10 mA, IB = mAIC = 50 mA, IB = (sat)

4 Base-Emitter Saturation VoltageIC = 10 mA, IB = mAIC = 50 mA, IB = / MMBT3904 / PZT3904 Thermal Characteristics TA = 25 C unless otherwise notedSymbolCharacteristicMaxUnits2N3904* PZT3904 PDTotal Device DissipationDerate above 25 , / CR JCThermal Resistance, Junction to C/WR JAThermal Resistance, Junction to Ambient200125 C/WSymbolCharacteristicMaxUnits**MMBT390 4 MMPQ3904 PDTotal Device DissipationDerate above 25 , / CR JAThermal Resistance, Junction to AmbientEffective 4 DieEach Die357125240 C/W C/W C/WTypical CharacteristicsBase-Emitter ON Voltage vsCollector - COLLECTOR CURRENT (mA)V - BASE-EMITTER ON VOLTAGE (V)BE(ON)CV = 5 VCE 25 C125 C- 40 CTypical Pulsed Current Gainvs Collector - COLLECTOR CURRENT (mA)h - TYPICAL PULSED CURRENT GAINFE- 40 C25 CCV = 5 VCE 125 C*Device mounted on FR-4 PCB 36 mm X 18 mm X mm; mounting pad for the collector lead min.

5 6 cm2.**Device mounted on FR-4 PCB " X " X "NPN General Purpose Amplifier(continued)Base-Emitter SaturationVoltage vs Collector Current - COLLECTOR CURRENT (mA)V - BASE-EMITTER VOLTAGE (V)BESATC = 1025 C125 C- 40 CCollector-Emitter SaturationVoltage vs Collector Current - COLLECTOR CURRENT (mA)V - COLLECTOR-EMITTER VOLTAGE (V)CESAT25 CC = 10125 C- 40 C2N3904 / MMBT3904 / PZT3904 NPN General Purpose Amplifier(continued)Typical Characteristics (continued)Collector-Cutoff Currentvs Ambient - AMBIENT TEMPERATURE ( C)I - COLLECTOR CURRENT (nA)AV = 30 VCBCBO Capacitance vs Reverse Bias BIAS VOLTAGE (V)CAPACITANCE (pF)CoboC ibof = MHzNoise Figure vs - FREQUENCY (kHz)NF - NOISE FIGURE (dB)V = = 100 A, R = 500 CSI = mA R = 200 CSI = 50 A R = k CSI = mA R = 200 CSk Noise Figure vs Source - SOURCE RESISTANCE ( )NF - NOISE FIGURE (dB)I = 100 ACI = mACSI = 50 ACI = mAC - DEGREES040608010012014016020180 Current Gain and Phase Anglevs Frequency110100100005101520253035404550f - FREQUENCY (MHz)h - CURRENT GAIN (dB) V = 40 VCEI = 10 mAChfefePower Dissipation vsAmbient ( C)P - POWER DISSIPATION (W)DoSOT-223 SOT-23TO-922N3904 / MMBT3904 / PZT3904 NPN General Purpose Amplifier(continued)

6 Typical Characteristics (continued)Turn-On Time vs Collector Current110100510100500I - COLLECTOR CURRENT (mA)TIME (nS)I = I = @V = 0 VCBdt @V = Time vs Collector Current110100510100500I - COLLECTOR CURRENT (mA)t - RISE TIME (ns)I = I = B1CB2Ic10T = 125 CT = 25 CJV = 40 VCCrJStorage Time vs Collector Current110100510100500I - COLLECTOR CURRENT (mA)t - STORAGE TIME (ns)I = I = B1CB2Ic10ST = 125 CT = 25 CJJFall Time vs Collector Current110100510100500I - COLLECTOR CURRENT (mA)t - FALL TIME (ns)I = I = B1CB2Ic10V = 40 VCCfT = 125 CT = 25 CJJ2N3904 / MMBT3904 / PZT3904 NPN General Purpose Amplifier(continued)Test Circuits10 K V275 t1C1 <<<<< pFDuty Cycle ===== 2%Duty Cycle ===== 2%<<<<< ns - V 300 V10 < < < < < t1 <<<<< 500 s V - V<<<<< ns0010 K V275 C1 <<<<< pF1N916 FIGURE 2: Storage and Fall Time Equivalent Test CircuitFIGURE 1.

7 Delay and Rise Time Equivalent Test CircuitTRADEMARKSACEx CoolFET CROSSVOLT E2 CMOSTMFACT FACT Quiet Series FAST FASTr GTO HiSeC The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and isnot intended to be an exhaustive list of all such SUPPORT POLICYFAIRCHILD S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORTDEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR used herein:ISOPLANAR MICROWIRE POP PowerTrench QS Quiet Series SuperSOT -3 SuperSOT -6 SuperSOT -8 TinyLogic 1. Life support devices or systems are devices orsystems which, (a) are intended for surgical implant intothe body, or (b) support or sustain life, or (c)

8 Whosefailure to perform when properly used in accordancewith instructions for use provided in the labeling, can bereasonably expected to result in significant injury to A critical component is any component of a lifesupport device or system whose failure to perform canbe reasonably expected to cause the failure of the lifesupport device or system, or to affect its safety STATUS DEFINITIONSD efinition of TermsDatasheet Identification Product Status DefinitionAdvance InformationPreliminaryNo Identification NeededObsoleteThis datasheet contains the design specifications forproduct development. Specifications may change inany manner without datasheet contains preliminary data, andsupplementary data will be published at a later Semiconductor reserves the right to makechanges at any time without notice in order to datasheet contains final specifications.

9 FairchildSemiconductor reserves the right to make changes atany time without notice in order to improve datasheet contains specifications on a productthat has been discontinued by Fairchild datasheet is printed for reference information orIn DesignFirst ProductionFull ProductionNot In ProductionDISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHERNOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILDDOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCTOR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENTRIGHTS, NOR THE RIGHTS OF OTHERS.