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3. Short Channel Effects on MOS Transistors.
• The electron velocity is related to the electric field through the mobility: (3) • Combining (1) and (3) in (2): I Ddx=µ nC OXW(V GS-V(x)-V T)dV (4) • Integrating (4) from 0 to L yields the voltage-current relation of the transistor: (5) • The behavior of the short channel devices deviates considerably from this model. • Eq.
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